1200V N-Channel Silicon Carbide Power MOSFET SiC MOSFET

1200V N-Channel Silicon Carbide Power MOSFET SiC MOSFET

Name: YZPST-M2G0080120D N-Channel Power MOSFET
Uploaded: 2022-12-23T12:32:32+08:00
Description: 1200V N-Channel Silicon Carbide Power MOSFET

$10100-999 Piece/Pieces

$6.5≥1000Piece/Pieces

Payment Type:	L/C,T/T,Paypal
Incoterm:	FOB,CFR,CIF
Transportation:	Ocean,Air
Port:	SHANGHAI

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Product Description

Product Attributes

Model No.: YZPST-M2G0080120D

Brand: YZPST

VDSmax: 1200V

Id: 42A

Pd: 208W

VGS,op: -5/+20V

VGSmax: -10/+25V

Packaging & Delivery

Selling Units	:	Piece/Pieces
Package Type	:	1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging
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YZPST-M2G0080120D N-Channel Power MOSFET

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Product Description

M2G0080120D

1200V N-Channel Silicon Carbide Power MOSFET SiC MOSFET

Features

• Optimized package with separate driver source pin

• High blocking voltage with low on-resistance

• High-speed switching with low capacitances

• Fast intrinsic diode with low reverse recovery (Qrr)

• Easy to parallel

• RoHS compliant

Benefits

• Higher System Efficiency

• Reduce cooling requirements

• Increased power density

• Enabling higher frequency

• Minimize gate ringing

• Reduction of system complexity and cost

Applications

• Switch Mode Power Supplies

• DC/DC converters

• Solar Inverters

• Battery Chargers

• Motor Drives

Power MOSFET

Maximum Ratings (Tc = 25 °C unless otherwise specified )

Symbol	Parameter	Value	Unit	Test Conditions	Note
f^DSmax	Drain-Source Breakdown Voltage	1200	V	海=0 V, /d=100 卩A
Id	Continuous Drain Current	42	A	4s=20 V Tc=25 °C	Fig. 18
Pd	Power Dissipation	208	W	*=25 °C	Fig. 19
FgS,op	Recommend Gate Source Voltage	-0.25	V
J^Smax	Maximum Gate Source Voltage	-0.4	V	AC (f>lHz)	Note 1
Tj, Tstg	Operating Junction and Storage Temperature Range	-55 to	°C
Tj, Tstg	Operating Junction and Storage Temperature Range	175	°C
7l	Soldering Temperature	260	°C

Electrical Characteristics

Symbol	Parameter	Min.	Typ.	Max.	Unit	Test Conditions	Note
Static
BVds	Drain-Source Breakdown Voltage	1200	-	-	V	4s=0 V, Zd=100 卩A
A)ss	Zero Gate Voltage Drain Current	—	11	100		丹s=1200 V Pgs=0 V
Igss	Gate-Source Leakage	—	10	250	nA	4s=20 V
FGS(th)	Gate-Source Threshold Voltage	2	—	4	V	Id=5 mA,	Fig. 11
&DS(on)	Drain-Source On-Resistance	—	78	100	mQ	国=20 V, Zd=20 A	Fig. 6
Dynamic
Ciss	Input Capacitance	—	1128		PF	4s=0 V,比s=1000 V	Fig. 17
C^oss	Output Capacitance	—	86			f^l.OMHz,瓜=25 mV
Crss	Reverse Transfer Capacitance	—	5
Eoss	Coss Stored Energy	-	44		卩J		Fig. 16
Qs	Total Gate Charge	—	52		nC	moo V	Fig. 12
figs	Gate-Source Charge	-	17			血=20 A
Qgd	Gate-Drain Charge	-	15			Fgs=-5/+20 V
td(cn)	Turn-on Delay Time	—	41		ns	丹 s=800 V
tr	Turn-on Rise Time	-	21			Fgs=-5/+20 V
	Turn-off Delay Time	—	48			Id=20A
tf	Turn-off Fall Time	—	16			Ro(ext)=2.5 Q
RG(int)	Internal Gate Resistance	-	4		n	E.O MHz, Vac=25 mV