YANGZHOU POSITIONING TECH CO., LTD.
YANGZHOU POSITIONING TECH CO., LTD.
Home> Products> Semiconductor Plastic Package> Bi Directions Thyristor (Triac)> 30A 600V triac TO-3PA complying with UL standards
30A 600V triac TO-3PA complying with UL standards
30A 600V triac TO-3PA complying with UL standards
30A 600V triac TO-3PA complying with UL standards
30A 600V triac TO-3PA complying with UL standards
30A 600V triac TO-3PA complying with UL standards
30A 600V triac TO-3PA complying with UL standards

30A 600V triac TO-3PA complying with UL standards

$0.651000-9999 Piece/Pieces

$0.56≥10000Piece/Pieces

Payment Type:L/C,T/T,Paypal
Incoterm:FOB,CFR
Product Attributes

Model No.YZPST-BTA30-600V

Place Of OriginChina

Tstg-40 ~175℃

Tj-40~150℃

VDRM600V

VRRM600V

VDSMVDRM +100V

VRSMVRRM +100V

IT(RMS)30A

ITSM300A

I2t378A2S

Packaging & Delivery
Selling Units : Piece/Pieces
Download :
Triac BTA30-600V TO-3PA
Product Description

30A 600V TRIAC  YZPST-BTA30-600V


DESCRIPTION:

The BTA30 triac series is suitable to fit all models of

control    Found    in    applications     such    as    motor

control ,industrial and domestic lighting ,heating and

static switching , motor speed controllers,…Thanks to

their clip assembly technique, they provide a superior

performance in surge current handling capabilities

By using an internal ceramic pad, the BTA series

provides voltage  insulated tab  (rated  at  2500VRMS)

complying with UL standards.

TO-3P TRIAC



ABSOLUTE MAXIMUM RATINGS


Parameter

Symbol

Value

Unit

Storage junction temperature range

Tstg

-40 ~175

Operating junction temperature range

Tj

-40~150

Repetitive peak off-state voltage (T =25)

VDRM

600

V

Repetitive peak reverse voltage (T =25)

VRRM

600

V

Non repetitive surge peak Off-state voltage

VDSM

VDRM +100

V

Non repetitive peak reverse voltage

VRSM

VRRM +100

V

RMS on-state current

IT(RMS)

30

A

Non repetitive surge peak on-state current

(full cycle, F=50Hz)

ITSM

300

A

I2t value for fusing (tp=10ms)

I2t

378

A2S

Critical rate of rise of on-state current

(I =2×IGT)

dI/dt

50

A/μS

Peak gate current

IGM

4

A

Average gate power dissipation

PG(AV)

1

W

4 Quadrants

Symbol Test Condition Quadrant Value Unit
IGT    MAX. 20 mA
VGT V =12V R =33Ω    MAX. 1.3 V
VGD VD=VDRM Tj=125 R=3.3KΩ    MIN. 0.2 V
IL IG=1.2IGT   MAX. 50 mA
IH IT=100mA MAX. 40 mA
dV/dt VD=2/3VDRM Gate Open    Tj=125 MIN. 400 V/μs

STATIC CHARACTERISTICS

Symbol Parameter Value(MAX.) Unit
VTM ITM =4.5Atp=380μs Tj =25 1.5 V
IDRM VD=VDRM VR=VRRM Tj =25 5 μA
IRRM Tj =125 1 mA


TO-3P Package Mechanical Data

TO-3P

Home> Products> Semiconductor Plastic Package> Bi Directions Thyristor (Triac)> 30A 600V triac TO-3PA complying with UL standards
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