Single mesa structure TO-220F 600V BT152X-600R triac

Single mesa structure TO-220F 600V BT152X-600R triac

Name: TRIAC BT152X-600R TO220F
Uploaded: 2023-09-14T09:09:02+08:00
Description: TRIAC BT152X-600R TO220F

$0.184000-19999 Piece/Pieces

$0.14≥20000Piece/Pieces

نوع پرداخت:	L/C,T/T,Paypal
اینکوترم:	FOB,CFR,CIF
حمل و نقل:	Ocean,Land,Air
بندر:	SHANGHAI

Option:

IT (RMS)：20A
VRRM：600V
IT(AV):13A
ITSM:200A
VDRM ：600V
IGM:4A

اکنون تماس بگیرید

توضیحات محصول

ویژگی های محصول

مدل شماره: YZPST-BT152X-600R

نام تجاری: YZPST

Place Of Origin: China

IT (RMS): 20A

VRRM: 600V

IT(AV): 13A

ITSM: 200A

IGM: 4A

PGM: 5W

PG(AV): 1W

Tstg: -40--+150℃

Tj: -40--+125℃

Packaging & Delivery

فروش واحد	:	Piece/Pieces
نوع بسته بندی	:	1. Anti-electrostatic packaging 2. Carton box 3. braid
دانلود	:

TRIAC BT152X-600R TO220F

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توضیحات محصول

BT152-600R/800R

Single mesa structure TO-220F 600V BT152X-600R triac

YZPST-BT152X-600R

●Product features
Silicon unilateral device NPNP four layer structure,
P+ on the through diffusion isolation,
Single mesa structure (Single Mesa),
Table glass passivation process,
The back (anode) electrode metal: Ti-Ni-Ag
The high ability of current shock resistance
●The main purposes
Alternating current switch,
AC DC power converter,
The control of electric heating
Motor speed control
● Package
TO-220M1 TO-220F

YZPST-BT152X-600R

Main Feature (Tj=25℃)

Symbol	Value	Unit
IT (RMS)	20	A
VDRM VRRM	600/800	V
IGT	≤200	uA

Absolute ratings (Limiting Values)

Symbol	Parameter	Value	Unit
IT (RMS)	RMS on-state current (180 °conduction angle)	20	A
IT(AV)	AV on-state current (180 °conduction angle)	13	A
ITSM	Non repetitive surge peak on-state	200	A
ITSM	Current (tp=10ms)	200	A
IGM	Peak gate current(tp=20us)	4	A
PGM	Peak gate power	5	W
PG(AV)	Average gate power	1	W
Tstg	Storage temperature	110	℃
Tj	Operating junction temperature	85	℃

Thermai Resistances

Symbol	Parameter		Value	Unit
		TO-220M1	2.2
Rth (j-c)	Junction to case	TO-220F	2.5	℃/W

Electrical characteristics (Tj=25℃ unless otherwise stated)

Symbol	Test Conditions		Value			Unit
Symbol	Test Conditions		Min	Type	Max	Unit
IGT	VD=12V, RL=33Ω		----	5	25	mA
VGT	VD=12V, RL=33Ω		-----	-----	1.3	V
VGD	VD=VDRM, RL=3.3KΩ, RGK=1KΩ,Tj=125℃		0.2	-----	-----	V
IH	IT=500mA		-----	-----	30	mA
IL	IG=1.2IGT		-----	-----	60	mA
dV/dt	VD=67%VDRM, GateOpen, Tj=110℃		500			v/ μs
dV/dt	VD=67%VDRM, GateOpen, Tj=110℃		500	-----	-----	v/ μs
VTM	IT=30A,tp=380 μs		-----	-----	1.6	V
dI/dt	IG=2IGT		50	-----	-----	A/μs
I2T	Tp=10ms		-----	-----	200	A2S
		Tj=25℃	-----	-----	10	μA
IDRM	VD=VDRM	Tj=125℃	-----	-----	1	mA
		Tj=25℃	-----	-----	10	μA
IRRM	VR=VRRM	Tj=125℃	-----	-----	1	mA