High surge capability 400A TG-C package triac TG25C60
$5100-999 Piece/Pieces
$2.9≥1000Piece/Pieces
نوع پرداخت: | L/C,T/T,Paypal |
اینکوترم: | FOB,CFR,CIF |
حمل و نقل: | Ocean,Land,Express,Others |
بندر: | SHANGHAI |
$5100-999 Piece/Pieces
$2.9≥1000Piece/Pieces
نوع پرداخت: | L/C,T/T,Paypal |
اینکوترم: | FOB,CFR,CIF |
حمل و نقل: | Ocean,Land,Express,Others |
بندر: | SHANGHAI |
مدل شماره: YZPST-BTA25-600BW TG25C60
نام تجاری: YZPST
Place Of Origin: China
IT RMS: 25A
ITSM: 300/330A
I2t: 450A2S
PGM: 10W
PGAV: 1W
IGM: 3A
VGM: 10V
Di/dt: 50A/μS
YZPST-TG25..SERIES
YZPST-BTA25-600BW TG25C60
TRIAC (ISOLATED TYPE)
TG25C/E/D are isolated molded triacs suitable for wide range of applications like copier, microwave oven, solid state switch,
motor control, light control and heater control.
IT AV 25A
High surge capability 400A
Isolated Nounting AC2500V
Tab Terminals
Maximum Ratings
Symbol
Item
Conditions
Ratings
Unit
IT RMS
R.M.S. On-State Current
Tc
25
A
ITSM
Surge On-State Current
One cycle, 50Hz/60Hz, peak, non-repetitive
300/330
A
I2t
I2t
Value for one cycle of surge current
450
A2S
PGM
Peak Gate Power Dissipation
10
W
PGAV
Average Gate Power Dissipation
1
W
IGM
Peak Gate Current
3
A
VGM
Peak Gate Voltage
10
V
di/dt
Critical Rate of Rise of On-State Current
IG=100mA,Tj=25 VD=1/2VDRM dIG/dt=1A/μS
50
A/μS
Tj
Operating Junction Temperature
-25~+125
℃
Tstg
Storage Temperature
-40~+125
℃
VISO
Isolation Breakdown Voltage R.M.S.
A.C. 1 minute
2500
V
Mounting Torque M4
Recommended Value 1.0 ~1.4(10~14)
14
kgf.CM
Maximum Ratings
Tj=25 unless otherwise specified
Symbol | Item | Ratings | Unit | |||
TG25C60 | TG25C80 | TG25C100 | TG25C12 | V | ||
VDRM | Repetitive Peak Off-State Voltage | 400 | 800 | 1000 | 1200 | V |
Symbol |
Item |
Conditions |
Ratings |
Unit |
|
IDRM |
Reptitive Peak Off-State Current, max |
VD=VDRM, Single phase, half wave, Tj=125℃ |
5 |
mA |
|
VTM |
Peak On-State Voltage, max |
On-State Current On-State Current √2X IT (RMS),Inst. measurement |
1.4 |
V |
|
I GT1 + |
1 |
Gate Trigger Current, max |
Tj =25℃, IT=1A, VD=6V |
50 |
mA |
I GT1 - |
2 |
Tj =25℃, IT=1A, VD=6V |
50 |
mA |
|
I GT3 + |
3 |
|
- |
mA |
|
I GT3 + |
4 |
Tj =25℃, IT=1A, VD=6V |
50 |
mA |
|
V GT1+ |
1 |
Gate Trigger Voltage, max |
Tj =25℃, IT=1A, VD=6V |
3 |
V |
V GT1- |
2 |
Tj =25℃, IT=1A, VD=6V |
3 |
V |
|
V GT3+ |
3 |
|
- |
V |
|
V GT3- |
4 |
Tj =25℃, IT=1A, VD=6V |
3 |
|
|
VGD |
Non-Trigger Gate Voltage, min |
Tj =25℃, VD= 1/2VRRM |
0.2 |
V |
|
tgt |
Turn On Time, max. |
IT=(RMS),IG= 100mA,VD=1/2VDR M,Tj=25℃,dIG/dt=1A/μS |
10 |
V |
|
dv/dt |
Critical Rate of Rise on-State Voltage,min. |
Tj=25℃,VD=2/3VDRM Exoponential wave. |
20 |
V/μS |
|
(dv/dt) c |
Critical Rate of Rise off-State Voltage at commutation, min |
Tj=25℃,VD=2/3VDRM di/dtc=15A/μS |
5 |
V/μS |
|
IH |
Holding Current, typ. |
Tj =25℃ |
30 |
mA |
|
Rth(j-c) |
Thermal Impedance, max |
Junction to case |
1.5 |
℃/W |
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اطلاعات بیشتری را پر کنید تا بتواند سریعتر با شما در تماس باشد
بیانیه حفظ حریم خصوصی: حریم خصوصی شما برای ما بسیار مهم است. شرکت ما قول می دهد که اطلاعات شخصی شما را برای هرگونه مجوزهای صریح خود برای هرگونه گسترش فاش نکند.