Capabilty Disc Powerex Thyristor DCR804 Configuration
Get Latest Priceنوع پرداخت: | L/C,T/T,Paypal |
اینکوترم: | FOB,CFR,CIF |
حمل و نقل: | Ocean,Air |
بندر: | SHANGHAI |
نوع پرداخت: | L/C,T/T,Paypal |
اینکوترم: | FOB,CFR,CIF |
حمل و نقل: | Ocean,Air |
بندر: | SHANGHAI |
مدل شماره: YZPST-DCR804
نام تجاری: YZPST
HIGH POWER THYRISTOR PHASE CONTROL
YZPST-DCR804
Characteristics of the Capsule Disc Powerex Thyristor : Guaranteed Maximum Turn-Off Time . Pressure Assembled Device
. All Diffused Structure . High dV/dt Capability .Blocking capabilty up to 2000 volts . Center Amplifying Gate Configuration
DCR804SG2121
HIGH POWER THYRISTOR FOR PHASE CONTROL APPLICATIONS
Features: . All Diffused Structure . Center Amplifying Gate Configuration . Blocking capabilty up to 2000 volts
. Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device
ELECTRICAL CHARACTERISTICS AND RATINGS
Blocking - Off State
VRRM (1) |
VDRM (1) |
VRSM (1) |
2000 |
2000 |
2100 |
VRRM = Repetitive peak reverse voltage
VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage (2)
Repetitive peak reverse leakage and off state leakage |
IRRM / IDRM
|
15 mA 35 mA (3) |
Critical rate of voltage rise (4) |
dV/dt |
200 V/msec |
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Average value of on-state current |
IT(AV) |
|
900 |
|
A |
Sinewave,180o conduction,Tc=67oC |
RMS value of on-state current |
ITRMS |
|
1400 |
|
A |
Nominal value |
Peak one cPSTCle surge (non repetitive) current |
ITSM |
|
13000
12000 |
|
A
A |
8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
I square t |
I2t |
|
700 |
|
KA2s |
8.3 msec and 10.0 msec |
Latching current |
IL |
|
800 |
|
mA |
VD = 24 V; RL= 12 ohms |
Holding current |
IH |
|
400 |
|
mA |
VD = 24 V; I = 2.5 A |
Peak on-state voltage |
VTM |
|
1.80 |
|
V |
ITM = 2200A; Duty cPSTCle £ 0.01%
|
Critical rate of rise of on-state current (5, 6) |
di/dt |
|
400 |
|
A/ms |
Switching from VDRM£ 1000 V, non-repetitive |
Critical rate of rise of on-state current (6) |
di/dt |
|
150 |
|
A/ms |
Switching from VDRM£ 1000 V |
ELECTRICAL CHARACTERISTICS AND RATINGS (cont`d)
Gating
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Peak gate power dissipation |
PGM |
|
200 |
|
W |
tp = 40 us |
Average gate power dissipation |
PG(AV) |
|
5 |
|
W |
|
Peak gate current |
IGM |
|
10 |
|
A |
|
Gate current required to trigger all units |
IGT |
|
300 150 125 |
|
mA mA mA |
VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = +25 oC VD = 6 V;RL = 3 ohms;Tj = +125oC |
Gate voltage required to trigger all units
|
VGT |
0.15 |
5 3
|
|
V V V |
VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = 0-125oC VD = Rated VDRM; RL = 1000 ohms; Tj = + 125 oC |
Peak negative voltage |
VGRM |
|
5 |
|
V |
|
Dynamic
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Delay time |
td |
|
1.5 |
0.7 |
ms |
ITM = 50 A; VD = Rated VDRM Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms |
Turn-off time (with VR = -50 V) |
tq |
|
200
|
125 |
ms |
ITM = 500 A; di/dt = 25 A/ms; VR³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% VDRM; VG = 0; Tj = 125 oC; Duty cPSTCle ³ 0.01% |
Reverse recovery charge |
Qrr |
|
* |
|
mC |
ITM = 500 A; di/dt = 25 A/ms; VR³ -50 V |
* For guaranteed max. value, contact factory.
THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Operating temperature |
Tj |
-40 |
+125 |
|
oC |
|
Storage temperature |
Tstg |
-40 |
+150 |
|
oC |
|
Thermal resistance - junction to case |
RQ (j-c) |
|
0.040 0.080 |
|
oC/W |
Double sided cooled Single sided cooled |
Thermal resistamce - case to sink |
RQ (c-s) |
|
0.015 0.030 |
|
oC/W |
Double sided cooled * Single sided cooled * |
Mounting force |
P |
13.3 |
15.5 |
|
kN |
|
Weight |
W |
|
|
225 |
g |
|
* Mounting surfaces smooth, flat and greased
Note : for case outline and dimensions, see case outline drawing in last page of this Technical Data
CASE OUTLINE AND DIMENSIONS
بیانیه حفظ حریم خصوصی: حریم خصوصی شما برای ما بسیار مهم است. شرکت ما قول می دهد که اطلاعات شخصی شما را برای هرگونه مجوزهای صریح خود برای هرگونه گسترش فاش نکند.
اطلاعات بیشتری را پر کنید تا بتواند سریعتر با شما در تماس باشد
بیانیه حفظ حریم خصوصی: حریم خصوصی شما برای ما بسیار مهم است. شرکت ما قول می دهد که اطلاعات شخصی شما را برای هرگونه مجوزهای صریح خود برای هرگونه گسترش فاش نکند.