Optimized for low dynamic losses thyristor RCT 2000V
$360≥20Piece/Pieces
نوع پرداخت: | L/C,T/T,Paypal |
اینکوترم: | FOB,CFR,CIF |
حداقل سفارش: | 20 Piece/Pieces |
حمل و نقل: | Ocean,Air |
بندر: | Shanghai |
$360≥20Piece/Pieces
نوع پرداخت: | L/C,T/T,Paypal |
اینکوترم: | FOB,CFR,CIF |
حداقل سفارش: | 20 Piece/Pieces |
حمل و نقل: | Ocean,Air |
بندر: | Shanghai |
مدل شماره: YZPST-KT50BT-5STR03T2040
نام تجاری: YZPST
Type: Intrinsic Semiconductor
فروش واحد | : | Piece/Pieces |
نوع بسته بندی | : | 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging |
REVERSE CONDUCTING THYRISTORS
YZPST-KT50BT-5STR03T2040
Features:
. Integrated freewheeling diode
. Optimized for low dynamic losses
Blocking - Off State
VRRM (1) |
VDRM (1) |
VRSM (1) |
2000 |
2000 |
2100 |
VRRM = Repetitive peak reverse
voltage
VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage (2)
Repetitive peak reverse leakage and off state leakage |
IRRM / IDRM |
10 mA 70 mA (3) |
Critical rate of voltage rise |
dV/dt (4) |
1000 V/msec |
Notes:
All ratings are specified for Tj=25 oC unless otherwise stated.
(1) All voltage ratings are specified for an applied
50Hz/60zHz sinusoidal waveform over the
temperature range -40 to +125 oC.
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 125 oC.
(4) Minimum value for linear and exponential waveshape to 80% rated VDRM. Gate open. Tj = 125 oC.
(5) Non-repetitive value.
(6) The value of di/dt is established in accordance with EIA/NIMA Standard RS-397, Section 5-2-2-6. The value defined would be in addition to that obtained from a ubber circuit,comprising a 0.2 F capacitor and 20 ohmsresistance in parallel with the thristor under test.
onducting - on state
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Average value of on-state current |
IT(AV)M IF(AV)M |
|
360 223 |
|
A |
Sinewave,180o conduction,Tc=70oC |
RMS value of on-state current |
ITRMS |
|
566 351 |
|
A |
Nominal value |
Peak one cPSTCle surge (non repetitive) current |
ITSM
IFSM |
|
5000
3500 |
|
A
A |
10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
I square t |
I2t |
|
125x103 61x103 |
|
A2s |
8.3 msec |
Latching current |
IL |
|
500 |
|
mA |
VD = 24 V; RL= 12 ohms |
Holding current |
IH |
|
100 |
|
mA |
VD = 24 V; I =2.5 A |
Peak on-state voltage |
VTM VFM |
|
2.61 3.42 |
|
V |
ITM = 1000 A |
Critical rate of rise of on-state current (5, 6) |
di/dt |
|
- |
|
A/ms |
Switching from VDRM £ 1000 V, non-repetitive |
Critical rate of rise of on-state current (6) |
di/dt |
|
400 |
|
A/ms |
Switching from VDRM £ 1000 V |
Gating
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Peak gate power dissipation |
PGM |
|
- |
|
W |
|
Average gate power dissipation |
PG(AV) |
|
5 |
|
W |
|
Peak gate current |
IGM |
|
25 |
|
A |
|
Gate current required to trigger all units |
IGT |
|
400 |
|
mA |
VD = 10 V;IT=3A;Tj = +25 oC
|
Gate voltage required to trigger all units |
VGT |
|
2.5 |
|
V |
VD = 10 V;IT=3A;Tj = +25 oC |
Peak negative voltage |
VRGM |
|
2 |
|
V |
|
Dynamic
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Delay time |
tgd |
|
1.0 |
|
ms |
VD=67% VDRM, IT=2000A, di/dt=60A/us, IFG=2A, tr=0.5us, Tj=25C |
Turn-on time |
tgt |
|
- |
|
|
|
Turn-off time (with VR = -5 V) |
tq |
|
40 |
- |
ms |
ITM=4000A, tp=2000us, di/dt=60A/us, Vr=100V, Vdr=67%VDRM, dVdr/dt=200V/us |
Reverse recovery current |
Irm |
|
- |
|
A |
ITM=4000A, tp=2000us, di/dt=60A/us |
THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Operating temperature |
Tj |
-40 |
+125 |
|
oC |
|
Storage temperature |
Tstg |
-40 |
+120 |
|
oC |
|
Thermal resistance - junction to case |
RQ (j-c)
RQ (j-c)D |
|
55 140 88 165 |
|
K/kW |
Double sided cooled Single sided cooled Double sided cooled Single sided cooled |
Thermal resistamce - case to sink |
RQ (c-s) |
|
10 20 |
|
K/kW |
Double sided cooled * Single sided cooled * |
Mounting force |
F |
8 |
12 |
- |
kN |
|
Weight |
W |
|
|
- |
Kg |
|
* Mounting surfaces smooth, flat and greased
Note : for case outline and dimensions, see case outline drawing in page 3 of this Technical Data
Sym |
A |
B |
C |
D |
H |
mm |
68 |
45 |
62 |
3.5×3 |
20±1 |
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اطلاعات بیشتری را پر کنید تا بتواند سریعتر با شما در تماس باشد
بیانیه حفظ حریم خصوصی: حریم خصوصی شما برای ما بسیار مهم است. شرکت ما قول می دهد که اطلاعات شخصی شما را برای هرگونه مجوزهای صریح خود برای هرگونه گسترش فاش نکند.