S9013 TO-92 Transistor NPN Complementary to S9012

Parameter

Symbol

Test     conditions

Min

Typ

Max

Unit

CoIIector base

V(BR)CBO

IC= 100μA , IE=0

40

V

breakdown

voItage

CoIIector emitter

V(BR)CEO

IC= 1mA ,  IB=0

25

V

breakdown

voItage

Emitter base

V(BR)EBO

IE= 100μA , IC=0

5

V

breakdown

voItage

CoIIector cut off

ICBO

VCB= 40V ,  IE=0

0.1

uA

current

CoIIector cut off

ICEO

VCE=20V ,  IE=0

0.1

uA

current

Emitter

IEBO

VEB= 5V, IC=0

0.1

uA

cut off

current

hFE(1)

VCE=1V, IC=50mA

64

400

DC

current

gain

hFE(2)

VCE=1V, IC= 500mA

40

CoIIector emitter

VCE(sat)

IC= 500mA, IB= 50mA

0.6

V

saturation

voItage

Base emitter

VBE(sat)

IC= 500mA, IB= 50mA

1.2

V

voItage

Transition

fT

VCE=6V,IC=20mA,f=30MHz

150

MHz

frequency

SymboI

Dimensions

Dimensions

 1n

 1n

MiIIimeters

1nches

Min

Max

Min

Max

A

3.3

3.7

0.13

0.146

A1

1.1

1.4

0.043

0.055

b

0.38

0.55

0.015

0.022

c

0.36

0.51

0.014

0.02

D

4.3

4.7

0.169

0.185

D1

3.43

0.135

E

4.3

4.7

0.169

0.185

e

1.270 TYP

0.050 TYP

1

2.44

2.64

0.096

0.104

L

14.1

14.5

0.555

0.571

o

1.6

0.063

h

0

0.38

0

0.015