Low RDS 480A Power MOSFET module factory and manufacturer

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Product parameters

Symbol	Test Conditions	Maximum Ratings
FET Type		N-Channel
Technology		MOSFET (Metal Oxide)
VDSS	TJ = 25°C to 150°C	75V
VGS	Continuous	±20V
ID25	TC = 25°C (Chip Capability)	480A
PD	TC = 25°C	940W
VGS(th)	VDS = VGS, ID = 8mA	5.0V(max.)
IDSS	TJ= 125°C	2mA
Ciss	VGS = 0 V, VDS = 25 V, f = 1 MHz	41pF
Qg(on)	VGS = 10V, VDS = 0.5 • VDSS, ID = 260A	545nC
TJ		﹣55℃~150℃
Mounting Type		Chassis Mount
Supplier Device Package		SOT-227B
Package / Case		SOT-227-4, miniBLOC

Features

International Standard Package
miniBLOC, with Aluminium Nitride
Isolation 
175°C Operating Temperature
Isolation Voltage 2500 V~
High Current Handling Capability
Fast Intrinsic Diode
Avalanche Rated
Low RDS(on)

Applications

DC-DC Converters and Off-Line UPS
Primary-Side Switch
High Speed Power Switching

Advantages

Easy to Mount
Space Savings
High Power Density