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High Power Fast Recovery Diode
High Power Fast Recovery Diode
High Power Fast Recovery Diode

High Power Fast Recovery Diode

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Product Attributes

Model No.YZPST-SD233N/R

BrandYZPST

Product Description

High Power Fast Recovery Diode

 FAST RECOVERY DIODES, Stud Version 

Features: High power FAST Recovery Diode series, 1.0 to 2.0 μs recovery time, High voltage ratings up to 5000V, High current capability, Optimized turn on and turn off characteristics, Low forward recovery, Fast and soft reverse recover, Compression bonded encapsulation, Stud version B-8, Maximum junction temperature 125°C 

Typical Applications: Snubber diode for GTO, Fast recovery, rectifier applications


High Power FAST Recovery Diode YZPST-SD233NR (1)

     

High Power FAST Recovery Diode


Forward Conduction


Parameters

PSTSD233N/R

Units

Conditions

IF(AV              Max. average forward current

 

@ Case temperature

250

A

180° conduction, half sine wave

60

°C

IF(RMX)           Max. RMS forward current

390

A

 

 

 

IFSM               Max. peak, one-cycle forward

 

non-repetitive surge current

5500

A

t = 10ms

No voltage

 

reapplied

Initial TJ =TJmax.

5760

A

t = 8.3ms

I2t             Maximum I2t for fusing

150000

A2s

t = 10ms

No voltage

 

reapplied

140000

A2s

t = 8.3ms

I2t          Maximum I2t for fusing

 

1500000

KA2√s

I2t for time tx = I2t x tx ;

 

0.1 tx 10ms, VRRM = 0V

VFM                Maximum forward voltage drop

3.0

V

TJ = 25 oC, IFM = 1200 (arm)

IRRM               Max. DC reverse current

10.0

μA

TJ = 25 oC, per diode at VRRM

Trr

5

μs




Outlines Table


High Power FAST Recovery Diode


苏ICP备05018286号-1
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