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Home> Products> Semiconductor Disc Devices(Capsule Type)> Inverter Thyristor> High dV/dt capability 6500V high power thyristor
High dV/dt capability 6500V high power thyristor
High dV/dt capability 6500V high power thyristor
High dV/dt capability 6500V high power thyristor
High dV/dt capability 6500V high power thyristor
High dV/dt capability 6500V high power thyristor

High dV/dt capability 6500V high power thyristor

$1501-99 Piece/Pieces

$95≥100Piece/Pieces

Payment Type:L/C,T/T,Paypal
Incoterm:FOB,CFR,CIF
Min. Order:1 Piece/Pieces
Transportation:Ocean,Air
Port:SHANGHAI
Product Attributes

Model No.YZPST-KP894A-6500V

BrandYZPST

VRRM6500V

VRSM894A

Packaging & Delivery
Selling Units : Piece/Pieces
Package Type : 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging
Product Description


  

High Power Thyristor FOR PHASE CONTROL APPLICATIONS

YZPST-KP894A-6500V

  

Product Description

Features:  

. All Diffused Structure

. Interdigitated Amplifying Gate Configuration v

. Guaranteed Maximum Turn-Off Time

. High dV/dt Capability

. Pressure Assembled Device

 ELECTRICAL CHARACTERISTICS AND RATINGS

Blocking - Off State

VRRM (1)

VDRM (1)

VRSM (1)

6500

6500

6600

 

VRRM = Repetitive peak reverse voltage

VDRM = Repetitive peak off state voltage

VRSM = Non repetitive peak reverse voltage (2)

Repetitive peak reverse leakage and off state leakage

IRRM / IDRM

20 mA

200 mA (3)

Critical rate of voltage rise

dV/dt (4)

1000 V/msec

Notes:

All ratings are specified for Tj=25 oC unless otherwise stated.

(1) All voltage ratings are specified for an applied

      50Hz/60zHz sinusoidal waveform over the

      temperature range  -40 to +125 oC.

(2) 10 msec. max. pulse width

(3) Maximum value for Tj = 125 oC.

(4) Minimum value for linear and exponential waveshape to 80% rated VDRM. Gate open. Tj = 125 oC.

(5) Non-repetitive value.

(6) The value of di/dt is established in accordance with EIA/NIMA Standard RS-397, Section 5-2-2-6. The value defined would be in addition to that obtained from a ubber circuit,comprising a 0.2 mF capacitor and 20 ohmsresistance in parallel with the thristor under test.

Notes:

All ratings are specified for Tj=25 oC unless otherwise stated.

(1) All voltage ratings are specified for an applied

      50Hz/60zHz sinusoidal waveform over the

      temperature range  -40 to +125 oC.

(2) 10 msec. max. pulse width

(3) Maximum value for Tj = 125 oC.

(4) Minimum value for linear and exponential waveshape to 80% rated VDRM. Gate open. Tj = 125 oC.

(5) Non-repetitive value.

(6) The value of di/dt is established in accordance with EIA/NIMA Standard RS-397, Section 5-2-2-6. The value defined would be in addition to that obtained from a ubber circuit,comprising a 0.2 mF capacitor and 20 ohmsresistance in parallel with the thristor under test.

Conducting - on state

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Max. average value of on-state current

IT(AV)M

 

894

 

A

Sinewave,180o conduction,Tc=60oC

RMS value of on-state current

IT(RMS)m

 

1404

 

A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

 

ITSM

 

-

   

12

 

kA

 

kA

8.3 msec (60Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t

 

0.72x106

 

A2s

8.3 msec

Latching current

IL

 

3000

 

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

 

300

 

mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM

 

2.4

 

V

ITM = 1000 A ,Tj = 25 oC

Critical rate of rise of on-state

current (5, 6)

di/dt

 

-

 

A/ms

Switching from VDRM £ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

 

200

 

A/ms

Switching from VDRM £ 1000 V

YZPST-KP894A-6500V-1

Sym

A

B

C

D

H

mm

75

47

66

3.5×3

26±1


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