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Home> Products> Semiconductor Stud Devices> Phase Control Stud Thyristor> High Frequency DC Power Encapsulation Thyristors
High Frequency DC Power Encapsulation Thyristors
High Frequency DC Power Encapsulation Thyristors
High Frequency DC Power Encapsulation Thyristors

High Frequency DC Power Encapsulation Thyristors

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Port:Shanghai
Product Attributes

Model No.YZPST-T700123503BY

BrandYZPST

Packaging & Delivery
Selling Units : Others
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Product Description


Phase Control Thyristors

YZPST-T700123503BY

Features of the Phase Control Thyristors: center amplifying gate configuration, compression  bonded encapsulation, high DV/DT capability and stud type, thread inch or metric.  The typical applications of the High Frequency Thyristors are medium power switching and DC power supplies.


Maximum Ratings And Characteristics

Symbol

Parameter

Values

Units

Test Conditions

ON-STATE

ITAV

Mean on-state current

350

A

Sinewave,180° conduction,Tc=85

ITRMS

RMS value of on-state current

550

A

Nominal value

ITSM

Peak one cycle surge

(non repetitive) current

9.1

KA

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I2t

I square t

416

KA2s

8.3 msec and 10.0 msec

IL

Latching current

-

mA

VD = 24 V; RL= 12 ohms

IH

Holding current

-

mA

VD = 24 V; I = 2.5 A

VTM

Peak on-state voltage

1.4

V

ITM = 625 A; Duty cycle £ 0.01%

di/dt

Critical rate of rise

of on-state current

non-repetitive

800

A/ms

Gate drive 20V, 20Ω, tr≤1μs, Tj=Tjmax, anode voltage≤80% VDRM

repetitive

150

BLOCKING

VDRM

VRRM

Repetitive peak off state voltage

Repetitive peak reverse voltage

1200

V

VDSM

VRSM

Non repetitive peak off state voltage

Non repetitive peak reverse voltage

1300

V

IDRM

IRRM

Repetitive peak off state current Repetitive peak reverse  current

30

mA

Tj = 125 oC ,VRRM VDRM applied

dV/dt

Critical rate of voltage rise

1000

V/ms

TJ=TJmax, linear to 80% rated VDRM

TRIGGEING

PG(AV)

Average gate power dissipation

3

W

PGM

Peak gate power dissipation

16

W

IGM

Peak gate current

-

A

IGT

Gate trigger current

150

mA

TC = 25 oC

VGT

Gate trigger voltage

3.0

V

TC = 25 oC

VGD

Gate non-trigger voltage

0.15

V

Tj = 125 oC

SWITCHING

tq

Turn-off time

150

ms

ITM=550A, TJ=TJmax, di/dt=40A/μs,

VR=50V, dv/dt=20V/μs, Gate 0V 100Ω, tp=500μs

td

Delay time

-

Gate current A, di/dt=40A/μs,

Vd=0.67%VDRM, TJ=25 oC

Qrr

Reverse recovery charge

-

Thermal And Mechanical

 

Symbol

Parameter

Values

Units

Test Conditions

Tj

Operating temperature

-40~125

oC

Tstg

Storage temperature

-40~150

oC

R th (j-c)

Thermal resistance - junction to case

0.1

oC/W

DC operation ,Single sided cooled

R th (c-s)

Thermal resistance - case to sink

0.05

oC/W

Single sided cooled

P

Mounting force

3.5

Nm

W

Weight

-

g

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High Frequency Thyristors

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