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Model No.: YZPST-5STP12K6500
Brand: YZPST
High Power Thyristor FOR PHASE CONTROL
YZPST-5STP12K6500
HIGH Power Thyristor FOR PHASE CONTROL APPLICATIONS
6000v THYRISTOR Features: . All Diffused Structure . Spoke Amplifying Gate Configuration
. Guaranteed Maximum Turn-Off Time . High dV/dt Capability
. Pressure Assembled Device
Conducting - on state
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Average value of on-state current | IT(AV) | | 1200 | | A | Sinewave,180o conduction,Tc=85oC |
| RMS value of on-state current | ITRMS | | 1800 | | A | Nominal value |
| Peak one cycle surge (non repetitive) current |
ITSM | | 19000 | |
A | 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
| I square t | I2t | | 12x106 | | A2s | 10.0 msec |
| Latching current | IL | | 3 | | A | VD = 24 V; RL= 12 ohms |
| Holding current | IH | | 350 | | mA | VD = 24 V; I = 2.5 A |
| Peak on-state voltage | VTM | | 1.99 | | V | ITM = 3000 A; Duty cycle 0.01% |
| Critical rate of rise of on-state current (5, 6) | di/dt | |
800 | | A/ s | Switching from VDRM 3000 V, non-repetitive |
| Critical rate of rise of on-state current (6) | di/dt | | 200 | | A/ s | Switching from VDRM 3000 V |
Gating
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Peak gate power dissipation | PGM | | 200 | | W | tp = 40 us |
| Average gate power dissipation | PG(AV) | | 5 | | W | |
| Peak gate current | IGM | | 20 | | A | |
| Gate current required to trigger all units | IGT | | 300 | | mA | VD = 6 V;RL = 3 ohms;Tj = +25 oC |
| Gate voltage required to trigger all units | VGT | |
3 | |
V |
VD = 6 V;RL = 3 ohms;Tj = 25oC |
| Peak negative voltage | VGRM | | 20 | | V | |
* Mounting surfaces smooth, flat and greased
Note :for case outline and dimensions, see case outline drawing in page 3 of this Technical Data
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Address: 3rd Floor, Weiheng Building No.20 B Area, Yangzhou, Jiangsu China
Website: https://www.yzpst.com
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