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Home> Products> Semiconductor Disc Devices(Capsule Type)> Phase Control Thyristor> KK1275A Thyristor Power Phase Control Circuit
KK1275A Thyristor Power Phase Control Circuit
KK1275A Thyristor Power Phase Control Circuit
KK1275A Thyristor Power Phase Control Circuit

KK1275A Thyristor Power Phase Control Circuit

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Product Attributes

Model No.YZPST-KK1275A2100V

BrandYZPST

Product Description

High Power Thyristor Inverter 

YZPST-KK1275A2100V 

 R395CH21 HIGH Power Thyristor FOR PHASE CONTROL  APPLICATIONS  


Features:  Blocking capabilty up to 2100 volts,  All Diffused StructureHigh dV/dt Capability.  Center Amplifying Gate ConfigurationPressure Assembled Device, Guaranteed Maximum Turn-Off Time  


High Power Thyristor Inverter YZPST-KK1275A2100V

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)

 

1275

 

A

Sinewave,180o conduction,Tc=80oC

RMS value of on-state current

ITRMS

 

1570

 

A

Nominal value

Peak one cycle surge

(non repetitive) current

 

ITSM

 

-

 

15500

 

A

 

A

8.3 msec (60Hz), sinusoidal wave-shape, 180o conduction, Tj = 125 oC

10.0 msec (50Hz), sinusoidal wave-shape, 180o conduction, Tj = 125 oC

I square t

I2t

 

1.2x106

 

A2s

8.3 msec and 10.0 msec

Latching current

IL

 

1000

 

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

 

500

 

mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM

 

1.9

 

V

ITM = 2000 A; Duty Cycle £0.01%; Tj =125 oC

Critical rate of rise of on-state

current (5, 6)

di/dt

 

200

 

A/ms

Switching from VDRM£ 1000 V,non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

 

100

 

A/ms

Switching from VDRM£ 1000 V


ELECTRICAL CHARACTERISTICS AND RATINGS


Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

 

200

 

W

tp = 40 us

Average gate power dissipation

PG(AV)

 

5

 

W

 

Peak gate current

IGM

 

10

 

A

 

Gate current required to trigger all units

IGT

 

-

150

-

 

mA

mA

mA

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = +25 oC

VD = 6 V;RL = 3 ohms;Tj = +125oC

Gate voltage required to trigger all units

 

 

VGT

 

-

3.0

-

 

 

V

V

V

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = 0-125oC

VD = Rated VDRM; RL = 1000 ohms;Tj = + 125 oC

Peak negative voltage

VGRM

 

5

 

V

 


Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

td

 

1.5

0.7

ms

ITM = 50 A; VD = Rated VDRM

Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms

Turn-off time (with VR = -50 V)

tq

 

-

60

ms

ITM = 1000 A; di/dt = 25 A/ms;

VR³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% VDRM; VG = 0;Tj = 125 oC; Duty cPSTCle ³ 0.01%

Reverse recovery charge

Qrr

 

*

 

mC

ITM = 1000 A; di/dt = 25 A/ms;

VR³ -50 V

                                                                              * For guaranteed max. value, contact factory.


THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS


Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

 

oC

 

Storage temperature

Tstg

-40

+125

 

oC

 

Thermal resistance - junction to case

RQ (j-c)

 

0.024

0.048

 

oC/W

Double sided cooled

Single sided cooled

Thermal resistamce - case to sink

RQ (c-s)

 

-

-

 

oC/W

Double sided cooled *

Single sided cooled *

Mounting force

P

19

26.7

 

kN

 

Weight

W

 

 

460

g

About


                                                                                  * Mounting surfaces smooth, flat and greased

  Note : for case outline and dimensions, see case outline drawing in page 3 of this Technical Data


Outline Drawing

 High Power Thyristor Inverter YZPST-KK1275A2100V

KK1275A2100V Thyristor Phase Control Circuit

High Power Thyristor Inverter YZPST-KK1275A2100V


Home> Products> Semiconductor Disc Devices(Capsule Type)> Phase Control Thyristor> KK1275A Thyristor Power Phase Control Circuit
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