YANGZHOU POSITIONING TECH CO., LTD.
YANGZHOU POSITIONING TECH CO., LTD.
Home> Products> Semiconductor Disc Devices(Capsule Type)> Phase Control Thyristor> Power Thyristors DCR1004 Phase Control 2200V
Power Thyristors DCR1004 Phase Control 2200V
Power Thyristors DCR1004 Phase Control 2200V
Power Thyristors DCR1004 Phase Control 2200V

Power Thyristors DCR1004 Phase Control 2200V

Get Latest Price
Payment Type:L/C,T/T,Paypal
Incoterm:FOB,CFR,CIF
Transportation:Ocean,Air
Port:SHANGHAI
Product Attributes

Model No.YZPST-DCR1004

BrandYZPST

Packaging & Delivery
Selling Units : Others
Download :
Product Description

High Power Thyristor Phase Control

YZPST-DCR1004

 

Features:  Center Amplifying Gate Configuration. Blocking capability up to 2100 volts. Guaranteed Maximum Turn-Off Time. High dV/dt Capability . Pressure Assembled Device.  All Diffused Structure. 

Thyristor DCR1004 2200V


Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)

 

1300

 

A

Sinewave,180o conduction,Tc=65oC

RMS value of on-state current

ITRMS

 

2000

 

A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

 

ITSM

 

20000

 

18000

 

A

 

A

8.3 msec (60Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t

 

1.7x106

 

A2s

8.3 msec and 10.0 msec

Latching current

IL

 

800

 

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

 

400

 

mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM

 

1.75

 

V

ITM = 3000 A; Duty cPSTCle £ 0.01%

Critical rate of rise of on-state

current (5, 6)

di/dt

 

600

 

A/ms

Switching from VDRM£ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

 

200

 

A/ms

Switching from VDRM£ 1000 V


ELECTRICAL CHARACTERISTICS AND RATINGS (cont`d)      

Gating


Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

 

200

 

W

t= 40 us

Average gate power dissipation

PG(AV)

 

5

 

W

 

Peak gate current

IGM

 

10

 

A

 

Gate current required to trigger all units

IGT

 

300

150

125

 

mA

mA

mA

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = +25 oC

VD = 6 V;RL = 3 ohms;Tj = +125oC

Gate voltage required to trigger all units

 

 

VGT

 

 

0.30

5

3

 

 

V

V

V

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = 0-125oC

VD = Rated VDRM; RL = 1000 ohms;

Tj = + 125 oC

Peak negative voltage

VGRM

 

5

 

V

 




 Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

td

 

1.5

0.7

ms

ITM = 50 A; VD = Rated VDRM

Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms

Turn-off time (with VR = -50 V)

tq

 

250

150

ms

ITM = 1000 A; di/dt = 25 A/ms;

VR³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% VDRM; VG = 0;

Tj = 125 oC; Duty cPSTCle ³ 0.01%

Reverse recovery charge

Qrr

 

*

 

mC

ITM = 1000 A; di/dt = 25 A/ms;

VR³ -50 V

               * For guaranteed max. value, contact factory.


THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

 

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

 

oC

 

Storage temperature

Tstg

-40

+150

 

oC

 

Thermal resistance - junction to case

RQ (j-c)

 

0.025

0.050

 

oC/W

Double sided cooled

Single sided cooled

Thermal resistamce - case to sink

RQ (c-s)

 

0.010

0.020

 

oC/W

Double sided cooled *

Single sided cooled *

Mounting force

P

24.5

26.7

 

kN

 

Weight

W

 

 

460

g

 



  * Mounting surfaces smooth, flat and greased


CASE OUTLINE AND DIMENSIONS

High Power Thyristor Phase Control


poseico ir scr thyristors DCR1004
Home> Products> Semiconductor Disc Devices(Capsule Type)> Phase Control Thyristor> Power Thyristors DCR1004 Phase Control 2200V
苏ICP备05018286号-1
Send Inquiry
*
*

We will contact you immediately

Fill in more information so that we can get in touch with you faster

Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.

Send