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Home> Products> Semiconductor Disc Devices(Capsule Type)> Phase Control Thyristor> 2800V High power thyristor for power converter
2800V High power thyristor for power converter
2800V High power thyristor for power converter
2800V High power thyristor for power converter
2800V High power thyristor for power converter

2800V High power thyristor for power converter

$1551-199 Bag/Bags

$105≥200Bag/Bags

Payment Type:L/C,T/T,Paypal
Incoterm:FOB,CFR,CIF
Min. Order:1 Bag/Bags
Transportation:Ocean,Air
Port:SHANGHAI
Product Attributes

Model No.YZPST-5STP24L2800

BrandYZPST

Product Description

High Power Thyristor Phase Control

YZPST-5STP24L2800

HIGH POWER THYRISTOR FOR PHASE CONTROL FEATURES AND APPLICATIONS 

Features:

. All Diffused Structure

. Interdigitated Amplifying Gate Configuration

. Guaranteed Maximum Turn-Off Time

. High dV/dt  Capability

. Pressure Assembled Device


YZPST-5STP24L2800-1

 

Conducting - on state

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

 

IT(AV)M

 

 

2400

 

 

A

Sinewave,180o

conduction,T =85oC

c

RMS value of on-state current

ITRMSM

 

4120

 

A

Nominal value

 

 

 

Peak one cPSTCle surge

(non repetitive) current

 

 

 

 

ITSM

 

 

 

46

 

43

 

 

 

kA

 

kA

8.3 msec (60Hz), sinusoidal wave-

shape, 180o  conduction, T = 125

j

oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180o  conduction, T = 125

j

oC

I square t

I2t

 

8.7x106

 

A2s

8.3 msec

Latching current

IL

 

200

 

mA

VD  = 24 V; RL= 12 ohms

Holding current

IH

 

75

 

mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM

 

1.35

 

V

I  = 3000 A; T = 125 oC

TM  j

Threshold vlotage

VT0

 

0.85

 

V

 

Slope resistance

rT

 

0.16

 

m

 

Critical rate of rise of on-state current (5, 6)

 

di/dt

 

 

300

 

 

A/  s

Switching from VDRM  1000 V, non-repetitive

Critical rate of rise of on-state current (6)

 

di/dt

 

 

150

 

 

A/  s

 

Switching from VDRM  1000 V

Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

 

-

 

W

 

 

Average gate power dissipation

 

PG(AV)

 

 

-

 

 

W

 

Peak gate current

IGM

 

-

 

A

 

Gate current required to trigger all units

 

IGT

 

 

400

 

 

mA

V   = 10 V;I =3A;T = +25 oC

D  T  j

Gate voltage required to trigger all units

 

 

VGT

 

 

 

2.6

 

 

V

 

V   = 10 V;I =3A;T = +25 oC

D  T  j

 

Peak negative voltage

 

VRGM

 

 

-

 

 

V


Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

tgd

 

3

-

s

VD=67% VDRM, IT=2000A, di/dt=60A/us, IFG=2A, tr=0.5us, Tj=25C

Turn-on time

tgt

 

-

-

 

 

Turn-off time (with VR  = -5 V)

 

tq

 

-

 

-

 

400

 

s

ITM=1000A, tp=1000us, di/dt=60A/us, Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/us

 

Reverse recovery current

 

Irm

 

 

-

 

 

A

ITM=4000A, tp=2000us, di/dt=60A/us

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS 

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

 

oC

 

 

Storage temperature

 

Tstg

 

-40

 

+140

 

 

oC

 

Thermal resistance - junction to

case

 

R  (j-c)

 

10

20

 

 

K/kW

Double sided cooled *

Single sided cooled *

Thermal resistamce - case to sink

 

R  (c-s)

 

2

4

 

 

K/kW

Double sided cooled * Single sided cooled *

Thermal resistance - junction to case

 

R  (j-s)

 

-

-

 

 

K/kW

Double sided cooled * Single sided cooled *

Mounting force

F

45

60

50

kN

 

Weight

W

 

 

0.9

Kg

about

* Mounting surfaces smooth, flat and greased

Note : for case outline and dimensions, see case outline drawing in last page of this Technical Data

Outline 

YZPST-5STP24L2800-2


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