YANGZHOU POSITIONING TECH CO., LTD.
YANGZHOU POSITIONING TECH CO., LTD.
Home> Products> Semiconductor Plastic Package> Silicon Controlled Rectifier (SCR)> Sensitive gate CR03 1.25A SOT-223-2L SCR
Sensitive gate CR03 1.25A SOT-223-2L SCR
Sensitive gate CR03 1.25A SOT-223-2L SCR
Sensitive gate CR03 1.25A SOT-223-2L SCR
Sensitive gate CR03 1.25A SOT-223-2L SCR
Sensitive gate CR03 1.25A SOT-223-2L SCR

Sensitive gate CR03 1.25A SOT-223-2L SCR

$0.031000-9999 Piece/Pieces

$0.02≥10000Piece/Pieces

Payment Type:L/C,T/T,Paypal
Incoterm:FOB,CFR,CIF
Transportation:Ocean,Air
Port:Shanghai
Product Attributes

Model No.YZPST-CR03

BrandYZPST

ApplicationMicrophone

Supply TypeOriginal Manufacturer, Odm, Other

Reference MaterialsPhoto, Datasheet, Eda/Cad Models

Package TypeSurface Mount

Installation MethodThrough Hole, Not Applicable

FET FunctionSilicon Carbide (Sic), Not Applicable

ConfigurationNot Applicable

Tstg-40 ~150℃

Tj-40~125℃

VDRM1400V

VRRM1400V

VDSMVDRM +100V

IT(RMS)1.25A

ITSM20A

Packaging & Delivery
Selling Units : Piece/Pieces
Package Type : For more detailed product information and transaction information, please contact our email address : info@yzpst.com
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Product Description



CR03 1.25A
SCRS
FEATURES
Sensitive gate
Direct triggering from low power drivers and logic ICs
Surface mountable package
APPLICATIONS
Ground Fault Circuit Interrupters (GFCI)
General purpose switching and phase control
Ignition circuits, CDI for 2- and 3-wheelers
Motor control - e.g. small kitchen appliances
Sensitive Gate SCR



SOT-223-2L Package Mechanical Data

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Storage junction temperature range

Tstg

-40 ~150

Operating junction temperature range

Tj

-40~125

Repetitive peak off-state voltage (T =25℃)

VDRM

1400

V

Repetitive peak reverse voltage (T =25℃)

VRRM

1400

V

Non repetitive surge peak Off-state voltage

VDSM

VDRM +100

V

Non repetitive peak reverse voltage

VRSM

VRRM +100

V

RMS on-state current

IT(RMS)

1.25

A

Non repetitive surge peak on-state current

(180° conduction angle, F=50Hz)

ITSM

20

A

I2t value for fusing (tp=10ms)

I2t

2.0

A2S

Critical rate of rise of on-state current

(I =2×IGT, tr ≤ 100 ns)

di/dt

50

A/μS

Peak gate current

IGM

1.0

A

Average gate power dissipation

PG(AV)

0.1

W

Maximum device temperature for

solderingPurposes(for 10 seconds maximum)

TL

260

ESD level

HBM

Class 3 (4000-16000V)

 

Humidity sensitive level

MSL

Three-level

(30,60%RH,168h)

Thermal Resistances

Symbol

Parameter

Value

Unit

Rth(j-a)

junction to ambient(DC)

60

 

℃/W

Rth(j-t)

Junction to tab (DC)

25

ELECTRICAL CHARACTERISTICS (T=25℃unless otherwise specified)

Symbol

Test Condition

Value

Unit

MIN.

TYP.

MAX.

IGT

V =12V R =140Ω

20

50

100

µA

VGT

-

0.8

1.0

V

VGD

VD=VDRM Tj=125℃ R=1KΩ

0.2

 

 

V

IL

IG=1.2IGT

-

-

6

mA

IH

IT=50mA

-

-

5

mA

dV/dt

VD=600V ,RGK=1KΩ, Tj=110℃

100

-

-

V/μs

STATIC CHARACTERISTICS

Symbol

Parameter

Value(MAX.)

Unit

VTM

ITM =2.5A tp=380μs

Tj =25℃

1.5

V

IDRM

 

VD=VDRM VR=VRRM

Tj =25℃

5

μA

IRRM

Tj =125℃

0.5

mA

SOT-223-2L Package Mechanical Data
Sensitive Gate SCR


Home> Products> Semiconductor Plastic Package> Silicon Controlled Rectifier (SCR)> Sensitive gate CR03 1.25A SOT-223-2L SCR
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