NPN silicon power transistors 13005D
$0.122000-9999 Piece/Pieces
$0.08≥10000Piece/Pieces
Payment Type: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Transportation: | Ocean,Air |
Port: | SHANGHAI |
$0.122000-9999 Piece/Pieces
$0.08≥10000Piece/Pieces
Payment Type: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Transportation: | Ocean,Air |
Port: | SHANGHAI |
Model No.: YZPST-13005D
Brand: YZPST
VCBO: 700V
VCEO: 400V
VEBO: 9V
IC: 3A
Icm: 6A
PTOT: 75W
Tj: 150℃
Tstg: -55—150℃
Selling Units | : | Piece/Pieces |
Package Type | : | 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging |
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NPN SILICON POWER TRANSISTORS 13005D
●DESRCRIPTION:
The 13005D is an NPN transistor used in electronic ballasts and electronic energy saving -lamps. It has the characteristics of low switching loss, high reliability, good high temperature characteristics, suitable switching speed, high breakdown voltage and low reverse leakage.
●ABSOLUTE MAX I MUM RATINGS
Symbol | Parameter | Value | Unit | |
VCBO | Collector-Base Voltage | 700 | V | |
VCEO | Collector-Emitter Voltage | 400 | V | |
VEBO | Emitter-Base Voltage | 9 | V | |
IC | Continuous Collector Current | 3 | A | |
Icm | Collector Pulse Current(Tp<5ms) | 6 | A | |
PTOT |
Total dissipation at Tcase=25 ℃ | TO-126SD | 50 | W |
TO-220 | 75 | |||
Tj | Junction Temperature | 150 | ℃ | |
Tstg | Storage Temperature Range | -55—150 | ℃ |
Symbol | Parameter | Test Condition | Value | Unit | ||
Min | Type | Max | ||||
ICBO | Collector Cutoff Current | VCB= 700 V,IE=0 |
|
| 0.1 | mA |
ICEO | Base Cutoff Current | VCE= 400 V,Ic=0 |
|
| 0.1 | mA |
IEBO | Emitter Cutoff Current | VEB= 9 V,IC=0 |
|
| 0.1 | mA |
VCBO | Collector-Base Breakdown Voltage | IC= 0.1mA | 700 |
|
| V |
VCEO | Collector-Emitter Breakdown Voltage | IC= 0.1mA | 400 |
|
| V |
VEBO | Emitter-Base Breakdown Voltage | IB= 0.1mA | 9 |
|
| V |
hFE | DC Current Gain | IC= 0.5A,VCE= 5V | 15 |
| 35 |
|
a VCE sat | Collector-Base Breakdown Voltage | IC= 2A,IB= 0.5A |
|
| 1 | V |
a VBE sat | Base-Emitter Saturation Voltage | IC= 2A,IB= 0.5A |
|
| 1.5 | V |
ts | Storage Time | UI9600,Ic=0.5A | 2 |
| 7 | us |
fT | Transition Frequency | VCE=10V,IC=0.2A F=1MHz | 5 |
|
| MHz |
a:Pulse Test,tp ≤300us,δ≤2% |
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