YANGZHOU POSITIONING TECH CO., LTD.
YANGZHOU POSITIONING TECH CO., LTD.
Home> Products> Semiconductor Plastic Package> Silicon Controlled Rectifier (SCR)> high reliability PNP Type Transistor 2SA940
high reliability PNP Type Transistor 2SA940
high reliability PNP Type Transistor 2SA940
high reliability PNP Type Transistor 2SA940
high reliability PNP Type Transistor 2SA940
high reliability PNP Type Transistor 2SA940

high reliability PNP Type Transistor 2SA940

$0.122000-9999 Piece/Pieces

$0.08≥10000Piece/Pieces

Payment Type:L/C,T/T,Paypal
Incoterm:FOB,CFR,CIF
Transportation:Ocean,Air
Port:SHANGHAI
Product Attributes

Model No.YZPST-2SA940

BrandYZPST

VCBO-150V

VCEO-150V

VEBO-5V

IC-1.5A

PTOT25W

Tj150℃

Tstg-55—150℃

Packaging & Delivery
Selling Units : Piece/Pieces
Package Type : 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging
Download :
high reliability PNP Type Transistor YZPST-2SA940
Product Description


PNP Type Transistor 2SA940

DESRCRIPTION:
The 2SA940 is a PNP type transistor, used as a power switch tube for electronic ballasts and electronic energy-saving lamps. It has the characteristics of low switching loss, high reliability, good high temperature characteristics, suitable switching speed, high breakdown voltage, low reverse leakage, etc.
high reliability PNP Type Transistor 2SA940


ABSOLUTE MAX I MUM RATINGS

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

-150

V

VCEO

Collector-Emitter Voltage

-150

V

VEBO

Emitter-Base Voltage

-5

V

IC

Continuous Collector Current

-1.5

A

PTOT

Total dissipation at Tcase=25 ℃

25

W

Tj

Junction Temperature

150

Tstg

Stora-1.5ge Temperature Range

-55150

ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)

Symbol

Parameter

Test Condition

Value

Unit

Min

Type

Max

V(BR)CBO

Collector-Base Breakdown Voltage

IC=-1mA

-150

 

 

V

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC=-1mA

-150

 

 

V

V(BR)EBO

Emitter-Base Breakdown Voltage

IE=-1mA

- 5

 

 

V

ICBO

Collector Cutoff Current

VCB=-150V, IE=0

 

 

-5

μA

ICEO

Collector Cutoff Current

VCE=-150V, IC=0

 

 

-5

μA

IEBO

Emitter Cutoff Current

VEB=-5V, IC=0

 

 

-5

μA

hFE

DC Current Gain

VCE=-10V, IC=-0.5A

40

 

140

 

VCE(sat)

Collector-Base Breakdown Voltage

IC=-0.5A, IB=-50mA

 

 

-0.85

V

VBE(sat)

Base-Emitter Saturation Voltage

IC=-0.5A, IB=-50mA

 

 

-1.5

V

a: tp300μs,δ≤2%

PACKAGE MECHANICAL DATA

TO220 PNP Type Transistor

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