High transition frequency BFR93A Plastic-Encapsulate Transistors
$0.0351000-9999 Piece/Pieces
$0.023≥10000Piece/Pieces
Payment Type: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Min. Order: | 1000 Piece/Pieces |
Transportation: | Ocean,Air |
Port: | Shanghai |
$0.0351000-9999 Piece/Pieces
$0.023≥10000Piece/Pieces
Payment Type: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Min. Order: | 1000 Piece/Pieces |
Transportation: | Ocean,Air |
Port: | Shanghai |
Model No.: YZPST-BFR93A
Brand: YZPST
Manufacturing Technology: Optoelectronic Semiconductor
Material: Element Semiconductor
Type: Intrinsic Semiconductor
Package: SMD
Signal Processing: Simulation
Application: Refrigerator
Model: ST
Batch Number: 2010+
VCBO: 20V
VCEO: 11V
VEBO: 3V
IC: 50mA
PC: 0.2W
TJ: 150℃
Tstg: -55~+150℃
Selling Units | : | Piece/Pieces |
Package Type | : | 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging |
Download | : |
High transition frequency BFR93A Plastic-Encapsulate Transistors
YZPST-BFR93A
1. High transition frequency.(Typ.fT=1.5GHz)
2.Small rbb`Cc and high gain.(Typ.4ps)
3. Small NF.
4. We declare that the material of product compliance with RoHS requirements.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter | Symbol | Value | Unit |
Collector-Base Voltage | VCBO | 20 | V |
Collector-Emitter Voltage | VCEO | 11 | V |
Emitter-base voltage | VEBO | 3 | V |
Collector Current | IC | 50 | mA |
Collector power dissipation | PC | 0.2 | W |
Junction temperature | Tj | 150 | °C |
Storage temperature | Tstg | -55~+150 | °C |
ELECTRICAL CHARACTERISTICS(TA = 25°C)
Parameter | Symbol | Min. | Typ | Max. | Unit | Conditions |
Collector-base breakdown voltage | BVCBO | 20 | - | - | V | IC=10mA |
Collector-emitter breakdown voltage | BVCEO | 11 | - | - | V | IC=1mA |
Emitter-base breakdown voltage | BVEBO | 3 | - | - | V | IE=10mA |
Collector cutoff current | ICBO | - | - | 0.5 | mA | VCB=10V |
Emitter cutoff current | IEBO | - | - | 0.5 | mA | VEB=2V |
Collector-emitter saturation voltage | VCE(sat) | - | - | 0.5 | V | IC/IB=10mA/5mA |
DC current transfer ratio | hFE | 56 | - | 120 | - | VCE/IC=10V/5mA |
Transition frequency | fT | 1.4 | 3.2 | - | GHz | VCE=10V, IE=-10mA, f=500MHz |
Output capacitance | Cob | - | 0.8 | 1.5 | pF | VCB=10V, IE=0A, f=1MHz |
Collector-base time constant | rbb`Cc | - | 4 | 12 | ps | VCB=10V, IC=10mA, f=31.8MHz |
Noise factor | NF | - | 3.5 | - | dB | VCE=6V, IC=2mA, f=500MHz,Rg=50W |
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