YANGZHOU POSITIONING TECH CO., LTD.
YANGZHOU POSITIONING TECH CO., LTD.
Home> Products> Semiconductor Plastic Package> Silicon Transistor> TO-92 Plastic-Encapsulate Transistor PNP transistor 2N3906
TO-92 Plastic-Encapsulate Transistor PNP transistor 2N3906
TO-92 Plastic-Encapsulate Transistor PNP transistor 2N3906
TO-92 Plastic-Encapsulate Transistor PNP transistor 2N3906
TO-92 Plastic-Encapsulate Transistor PNP transistor 2N3906
TO-92 Plastic-Encapsulate Transistor PNP transistor 2N3906
TO-92 Plastic-Encapsulate Transistor PNP transistor 2N3906

TO-92 Plastic-Encapsulate Transistor PNP transistor 2N3906

$8.5100-499 Others

$6.9≥500Others

Payment Type:L/C,T/T,Paypal
Incoterm:FOB,CFR,CIF
Transportation:Ocean,Land,Air
Port:SHANGHAI
Product Attributes

Model No.YZPST-2N3904

Place Of OriginChina

Collector-Base Voltage60V

Collector-Emitter Voltage40V

Emitter-Base Voltage6V

Collector Current -Continuous0.2A

Collector Power Dissipation0.625W

Operation Junction And Storage Temperat-55-150℃

Packaging & Delivery
Selling Units : KPCS
Download :
Transistor NPN 2N3904 TO92Fe
Product Description

TO-92 Plastic-Encapsulate Transistors

YZPST-2N3904 TRANSISTOR (NPN)

FEATURE
 NPN silicon epitaxial planar transistor for switching and
Amplifier applications
 As complementary type, the PNP Transistor 2N3906 is
Recommended
 This transistor is also available in the SOT-23 case with

the type designation MMBT3904

YZPST-2N3904 TO92

ORDERING INFORMATION

Part Number

Package

Packing Method

Pack Quantity

2N3904

T0-92

BuIk

1000pcs/Bag

2N3904-TA

T0-92

Tape

2000pcs/Box

MAXIMUM RATINGS (Ta=25'℃ unless otherwise noted)

Symbo1 Parameter Va1ue Unit
VCB0 Collector-Base Voltage 60 V
VCE0 Collector-Emitter Voltage 40 V
VEB0 Emitter-Base Voltage 6 V
C Collector Current -Continuous 0.2 A
PC Collector Power Dissipation 0.625 W
TJ,Tstg Operation Junction  and Storage Temperature Range -205 C

=25℃ unless otherwise specified

Parameter Symbo1 Test Min Typ Max Unit
conditions
Co11ectorbase V(BR)CBO IC=10ΚA, IE=0 60 V
breakdown
vo1tage
Co11ector﹒emitter V(BR)CEO IC= 1mA , IB=0 40 V
breakdown
vo1tage
Emitter﹒base V(BR)EBO IE= 10ΚA, IC=0 6 V
breakdown
vo1tage
Co11ector cut﹒off ICBO VCB=60V, IE=0 0.1 UA
current
Co11ector ICEX VCE=30V, VEB(off)=3V 0.05 UA
cutoff
current
Emitter IEBO VEB= 5V, IC=0 0.1 UA
cut﹒off
current
FE1 VCE=1V,    IC=10mA 100 400
DC
current FE2 VCE=1V,    IC=50mA 60
gain FE3 VCE=1V,    IC=100mA 30
Co11ector﹒emitter VCE(sat) IC=50mA, IB=5mA 0.3 V
saturation
vo1tage
Base﹒emitter VBE(sat) IC=50mA, IB=5mA 0.95 V
saturation
vo1tage
Transition T VCE=20V,IC=10mA,f=100MHz 300 MHZ
frequency
De1ay td VCC=3V,VBE=0.5V, 35 ns
Time IC=10mA,IB1=1mA
Rise tr 35 ns
Time
Storage ts VCC=3V, IC=10mA 200 ns
Time IB1=IB2=1mA
Fa11 tf 50 ns
Time


Outline Dimensions

YZPST-2N3904 Dimensions



Symbo1 Dimensions Dimensions
n ln
Mi11imeters lnches
Min Max Min Max
A 3.3 3.7 0.13 0.146
A1 1.1 1.4 0.043 0.055
b 0.38 0.55 0.015 0.022
c 0.36 0.51 0.014 0.02
D 4.3 4.7 0.169 0.185
D1 3.43 0.135
E 4.3 4.7 0.169 0.185
e 1.270 TYP 0.050 TYP
e1 2.44 2.64 0.096 0.104
L 14.1 14.5 0.555 0.571
Κ 1.6 0.063
h 0 0.38 0 0.015

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