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Custom logo original design keywords Asymmetric thyristor

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Basic Info

Model No.: YZPST-KN1000A28-BSTR62186

Type: Intrinsic Semiconductor

Additional Info

Productivity: 100

Brand: YZPST

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 500

Certificate: ISO9001-2008,ROHS

HS Code: 85413000

Port: Shanghai

Product Description

Asymmetric thyristors

YZPST-KN1000A28-BSTR62186

ELECTRICAL CHARACTERISTICS AND RATINGS

Asymmetric thyristors Type:KN1000A28-BSTR62186

Notes:

All ratings are specified for Tj=25 oC unless

otherwise stated.

(1) All voltage ratings are specified for an applied

50Hz/60zHz sinusoidal waveform over the

temperature range -40 to +125 oC.

(2) 10 msec. max. pulse width

(3) Maximum value for Tj = 125 oC.

(4) Minimum value for linear and exponential

waveshape to 80% rated VDRM. Gate open.

Tj = 125 oC.

(5) Non-repetitive value.

(6) The value of di/dt is established in accordance

with EIA/NIMA Standard RS-397, Section

5-2-2-6. The value defined would be in addi-

tion to that obtained from a snubber circuit,

comprising a 0.2 F capacitor and 20 ohms

resistance in parallel with the thristor under

test.

Blocking - Off State

VRRM (1)

VDRM (1)

20

2800

V_RRM = Repetitive peak reverse voltage

V_DRM = Repetitive peak off state voltage

Repetitive peak reverse leakage and off state leakage

I_{RRM /}I_DRM

100 mA

Critical rate of voltage rise

dV/dt (4)

1000 V/msec

Conducting - on state

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

I_T(AV)M

1000

A

Sinewave,180^o conduction,T_sink=55^oC

RMS value of on-state current

I_TRMS

2200

A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

I_TSM

20

KA

10.0 msec (50Hz), sinusoidal wave-

shape, 180^o conduction, T_j = 125 ^oC

I square t

I²t

2x10⁶

A²s

10.0 msec

Latching current

I_L

-

mA

V_D = 24 V; R_L= 12 ohms

Holding current

I_H

1000

mA

V_{D =} 24 V; I =2.5 A

Peak on-state voltage

V_TM

2.42

V

I_TM =2000 A; T_j = 125 ^oC

Critical rate of rise of on-state

current (5, 6)

di/dt

-

A/ms

Switching from V_DRM £ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

700

A/ms

Switching from V_DRM £ 1000 V

ELECTRICAL CHARACTERISTICS AND RATINGS

Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

P_GM

30

W

t_p= 40 us

Average gate power dissipation

P_G(AV)

5

W

Peak gate current

I_GM

-

A

Gate current required to trigger all units

I_GT

-

300

-

mA

mA

mA

V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC

V_D = 6 V;R_L = 3 ohms;T_j = +25 ^oC

V_D = 6 V;R_L = 3 ohms;T_j = +125^oC

Gate voltage required to trigger all units

V_GT

-

3.0

-

V

V

V

V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC

V_D = 6 V;R_L = 3 ohms;T_j = 0-125^oC

V_D = Rated V_DRM; R_L = 1000 ohms;

T_j = + 125 ^oC

Peak negative voltage

V_GRM

5

V

Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

t_d

1.6

0.8

ms

I_TM =500 A; V_D = Rated V_DRM

Gate pulse: V_G = 20 V; R_G = 20 ohms; t_r = 0.1 ms; t_p = 20 ms

Turn-off time (with V_R = -50 V)

t_q

-

55

ms

I_TM =1000 A; di/dt =25 A/ms;

V_R ³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% V_DRM; V_G = 0;

T_j = 125 ^oC; Duty cPSTCle ³ 0.01%

Reverse recovery charge

Q_rr

-

-

mC

I_TM =1000 A; di/dt =25 A/ms;

V_R ³ -50 V

* For guaranteed max. value, contact factory.

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

T_j

-40

+125

^oC

Storage temperature

T_stg

-40

+150

^oC

Thermal resistance - junction to case

R_Q_(j-c)

-

-

K/W

Double sided cooled

Single sided cooled

Thermal resistance - case to heatsink

R_Q_(c-s)

-

-

K/W

Double sided cooled

Single sided cooled

Thermal resistance - junction to heatsink

R_Q_(j-s)

0.02

0.04

K/W

Double sided cooled

Single sided cooled

Mounting force

P

19

26

kN

Weight

W

-

g

about

* Mounting surfaces smooth, flat and greased

Note : for case outline and dimensions, see case outline drawing in last page of this Technical Data

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Product Categories : Semiconductor Disc Devices(Capsule Type) > Asymmetric Thyristor

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Average value of on-state current	I_T(AV)M		1000		A	Sinewave,180^o conduction,T_sink=55^oC
RMS value of on-state current	I_TRMS		2200		A	Nominal value
Peak one cPSTCle surge (non repetitive) current	I_TSM		20		KA	10.0 msec (50Hz), sinusoidal wave- shape, 180^o conduction, T_j = 125 ^oC
I square t	I²t		2x10⁶		A²s	10.0 msec
Latching current	I_L		-		mA	V_D = 24 V; R_L= 12 ohms
Holding current	I_H		1000		mA	V_{D =} 24 V; I =2.5 A
Peak on-state voltage	V_TM		2.42		V	I_TM =2000 A; T_j = 125 ^oC
Critical rate of rise of on-state current (5, 6)	di/dt		-		A/ms	Switching from V_DRM £ 1000 V, non-repetitive
Critical rate of rise of on-state current (6)	di/dt		700		A/ms	Switching from V_DRM £ 1000 V

Custom logo original design keywords Asymmetric thyristor

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