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Home> Products> Semiconductor Disc Devices(Capsule Type)> Asymmetric Thyristor> Custom logo original design keywords Asymmetric thyristor
Custom logo original design keywords Asymmetric thyristor
Custom logo original design keywords Asymmetric thyristor
Custom logo original design keywords Asymmetric thyristor

Custom logo original design keywords Asymmetric thyristor

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Product Attributes

Model No.YZPST-KN1000A28-BSTR62186

BrandYZPST

TypeIntrinsic Semiconductor

Product Description

Asymmetric thyristors

YZPST-KN1000A28-BSTR62186

ELECTRICAL CHARACTERISTICS AND RATINGS

Asymmetric thyristors                       Type:KN1000A28-BSTR62186

Notes:

All ratings are specified for Tj=25 oC unless

otherwise stated.

(1) All voltage ratings are specified for an applied

  50Hz/60zHz sinusoidal waveform over the

     temperature range  -40 to +125 oC.

(2) 10 msec. max. pulse width

(3) Maximum value for Tj = 125 oC.

(4) Minimum value for linear and exponential

    waveshape to 80% rated VDRM. Gate open.

    Tj = 125 oC.

(5) Non-repetitive value.

(6) The value of di/dt is established in accordance

     with EIA/NIMA Standard RS-397, Section

     5-2-2-6. The value defined would be in addi-

     tion to that obtained from a snubber circuit,

     comprising a 0.2 F capacitor and 20 ohms

     resistance in parallel with the thristor under

     test.


Blocking - Off State              

VRRM (1)

VDRM (1)

20

2800

       VRRM = Repetitive peak reverse voltage

       VDRM = Repetitive peak off state voltage

 

Repetitive peak reverse leakage and off state leakage

IRRM / IDRM

 

100 mA

 

Critical rate of voltage rise

dV/dt (4)

1000 V/msec

Conducting - on state

 

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)M

 

1000

 

A

Sinewave,180o conduction,Tsink=55oC

RMS value of on-state current

ITRMS

 

2200

 

A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

 

ITSM

 

 

20

 

 

KA

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t

 

2x106

 

A2s

10.0 msec

Latching current

IL

 

-

 

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

 

1000

 

mA

VD = 24 V; I =2.5 A

Peak on-state voltage

VTM

 

2.42

 

V

ITM =2000 A; Tj = 125 oC

Critical rate of rise of on-state

current (5, 6)

di/dt

 

-

 

A/ms

Switching from VDRM £ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

 

700

 

A/ms

Switching from VDRM £ 1000 V

ELECTRICAL CHARACTERISTICS AND RATINGS                          

Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

 

30

 

W

tp = 40 us

Average gate power dissipation

PG(AV)

 

5

 

W

 

Peak gate current

IGM

 

-

 

A

 

Gate current required to trigger all units

IGT

 

-

300

-

 

mA

mA

mA

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = +25 oC

VD = 6 V;RL = 3 ohms;Tj = +125oC

Gate voltage required to trigger all units

 

 

VGT

 

 

 

-

3.0

-

 

V

V

V

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = 0-125oC

VD = Rated VDRM; RL = 1000 ohms;

Tj = + 125 oC

Peak negative voltage

VGRM

 

5

 

V

 

Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

td

 

1.6

0.8

ms

ITM =500 A; VD = Rated VDRM

Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms

Turn-off time (with VR = -50 V)

tq

 

-

55

ms

ITM =1000 A; di/dt =25 A/ms;

VR ³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% VDRM; VG = 0;

Tj = 125 oC; Duty cPSTCle ³ 0.01%

Reverse recovery charge

Qrr

 

-

-

mC

ITM =1000 A; di/dt =25 A/ms;

VR ³ -50 V

* For guaranteed max. value, contact factory.

                                                

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

 

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

 

oC

 

Storage temperature

Tstg

-40

+150

 

oC

 

Thermal resistance - junction to case

RQ (j-c)

 

-

-

 

K/W

Double sided cooled

Single sided cooled

Thermal resistance - case to heatsink

RQ (c-s)

 

-

-

 

K/W

Double sided cooled

Single sided cooled

Thermal resistance - junction to heatsink

RQ (j-s)

 

0.02

0.04

 

K/W

Double sided cooled

Single sided cooled

Mounting force

P

19

26

 

kN

 

Weight

W

 

 

-

g

about

* Mounting surfaces smooth, flat and greased

     Note : for case outline and dimensions, see case outline drawing in last page of this Technical Data



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