SG50AA80 two-way scr triac 800V

    Unit Price: USD 4.5 / Piece/Pieces
    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF
    Min. Order: 1000 Piece/Pieces
    Delivery Time: 30 Days

Basic Info

Model No.: YZPST-SG50AA80

Certification: RoHS

Additional Info

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity: 1000

Brand: YZPST

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 10000

Certificate: ISO9001-2008,ROHS

HS Code: 85413000

Port: Shanghai

Product Description

Triac YZPST-SG50AA80

SG50AA80 two-way scr triac 800V

TRIAC(ISOLATED TYPE)

SG50AA are isolated molded triacs suitable for wide range of applications like copier, microwave oven, solid state switch, motor control, light control and heater control.

● IT(AV) 50A

● High surge capability 330A

● Tab Terminals

Triac SG50AA (2)Triac SG50AA (1)


Symbol

Item

Unit

SG50AA80

SG50AA120

SG50AA160

VDRM

Repetitive Peak Off-State Voltage

800

1200

1600

V

Symbol

Item

Conditions

Ratings

Unit

IT(RMS)

R.M.S. On-State Current

Tc=58

50

A

ITSM

Surge On-State Current

One cycle, 50Hz/60Hz, peak, non-repetitive

450

A

I2t

I2t

Value for one cycle of surge current

730

A2S

PGM

Peak Gate Power Dissipation

10

W

PG(AV)

Average Gate Power Dissipation

1

W

IGM

Peak Gate Current

3

A

VGM

Peak Gate Voltage

10

V

di/dt

Critical Rate of Rise of On-State Current

IG=100mA,Tj=25,VD=1/2VDRM,

100

A/μs

Tj

Operating Junction Temperature

-25 to +125

Tstg

Storage Temperature

-40 to +125

Mounting Torque(M4)

Recommended Value 1.0-1.4(10-14)

1.5(15)

N.m

Mass

Typical value

2

g

Electrical Characteristics

Symbol

Item

Conditions

Ratings

Unit

IDRM

Reptitive Peak Off-State Current,

max

VD=VDRM, Single phase, half wave, Tj=125

5

mA

VTM

Peak On-State Voltage, max

On-State Current [ 2 × IT ( RMS )], Inst.

measurement

1.4

V

I + GT1

1

Gate Trigger Current, max

Tj=25,IT=1A,VD=6V

80

mA

I -GT1

2

Tj=25,IT=1A,VD=6V

80

I + GT3

3

-

I -GT3

4

Tj=25,IT=1A,VD=6V

80

V+ GT1

1

Gate Trigger Voltage, max

Tj=25,IT=1A,VD=6V

3

V

V-GT1

2

Tj=25,IT=1A,VD=6V

3

V+ GT3

3

-

V-GT3

4

Tj=25,IT=1A,VD=6V

3

VGD

Non-Trigger Gate Voltage, min

Tj=125,VD=1/2VDRM

0.2

V

tgt

Turn On Time, max.

IT(RMS),IG=100mA,VD=1/2VDRM,Tj

=25,dIG/dt=1A/μs

10

V

dv/dt

Critical Rate of Rise on-State

Voltage,min.

Tj=125,VD=2/3VDRM,Exoponential wave.

300

V/μs

dv/dt]c

Critical Rate of Rise off-State

Voltage at commutation, min

Tj=125,VD=2/3VDRM,[di/dt]c=15A/ms

200

V/μs

IH

Holding Current, typ.

Tj=25

30

mA

Rth(j-c)

Thermal Impedance, max

Junction to case

1.5

/W


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Product Categories : Semiconductor Plastic Package > Bi Directions Thyristor (Triac)

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  • SG50AA80 two-way scr triac 800V
  • SG50AA80 two-way scr triac 800V
  • SG50AA80 two-way scr triac 800V
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