Thyristor with amplifying gate SKKT106B-16E 1600V Thyristor Module

VDRM

VRRM

VRSM

1600V

1600V

1700V

Symbol

Conditions

Values

Units

IT(AV)

IRMS

sin. 180; TC=85°C

106

180

A

ITSM

I2t

Tvj=25°C; 10ms

Tvj=25°C; 8.3…10ms

2250

25

A

KA2s

VT

IDD

IRD

Tvj=25°C; IT=300A

Tvj=130°C; VRD=VRRM; VDD=VDRM

max. 1.65

max. 20

V

mA

tgd

tgr

Tvj=25°C; IG=1A; diG/dt=1A/μs; VD=2/3VDRM

1

2

μs

(di/dt)cr

(dv/dt)cr

tq

IH

IL

Tvj=130°C

Tvj=130°C

Tvj=130°C

Tvj=25°C; typ. /max.

Tvj=25°C; RG=33Ω; typ. /max.

max. 150

max. 1000

100

250

600

A/μs

V/μs

μs

mA

mA

VGT

IGT

VGD

IGD

Tvj=25°C; d.c.

Tvj=25°C; d.c.

Tvj=130°C; d.c.

Tvj=130°C; d.c.

min.1.0

min. 35

max. 0.25

max.6

V

mA

V

mA

Rth(j-c)

Rth(c-s)

Tvj

Tstg

per thyristor /per module

per thyristor /per module

0.28

0.2

-40…+130

-40…+125

K/W

K/W

°C

°C

Visol

a.c. 50Hz; r.m.s.; 1s/1min.

3600/3000

V