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Home > Products > Semiconductor Disc Devices(Capsule Type) > Fast Recovery Diode > High Surge rating high power fast rectifier diode

High Surge rating high power fast rectifier diode
High Surge rating high power fast rectifier diode
High Surge rating high power fast rectifier diode
High Surge rating high power fast rectifier diode

High Surge rating high power fast rectifier diode

Unit Price: USD 145 - 185 / Piece/Pieces
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Min. Order: 1 Piece/Pieces
Delivery Time: 30 Days
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Basic Info

    Model No.: YZPST-M2639ZC450

    Manufacturing Technology: Discrete Device

    Material: Compound Semiconductor

    VRRM: 4500V

    IRRM: 20 MA 150 MA

    IF(AV)M: 2639A

    IFRMS: 4922A

    IFSM: 27.5kA

    I2t: 3.79x103kA2s

Additional Info

    Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

    Productivity: 100

    Brand: YZPST

    Transportation: Ocean,Air

    Place of Origin: CHINA

    Supply Ability: 5000

    Certificate: ISO9001-2015,ROHS

    Port: SHANGHAI

Product Description

FAST Rectifier

YZPST-M2639ZC450

High Surge rating high power fast Rectifier Diode

Fast Recovery Diode

GENERAL PURPOSE HIGH POWER FAST RECTIFIER

Features:

. All Diffused Structure

. High Surge rating

. Soft Reverse Recovery

. Rugged Ceramic Hermetic Package

. Pressure Assembled Device

Typical Applications:

. Rectifier for Drives Applications

. Medium voltage converters

. Pulsed power applications

. Crowbar Applications

ELECTRICAL CHARACTERISTICS AND RATINGS

Reverse Blocking

VRRM (1)

VRSM (1)

4500

4500

VRRM = Repetitive peak reverse voltage

VRSM = Non repetitive peak reverse voltage (2)

Repetitive peak reverse leakage

IRRM

20 mA

150 mA

Conducting - on state

Parameter

Symbol

Min

Max.

Typ

Units

Conditions

Max. Average value of on-state current

IF(AV)M

2639

A

Sinewave,180oconduction,Tc=55oC

RMS value of on-state current

IFRMS

4922

A

Nominal value

Peak one cycle surge

(non repetitive) current

IFSM

27.5

kA

Tj=150°C, VR=0,8VRRM, tp=10ms

I square t

I2t

3.79x103

kA2s

10 msec

Peak on-state voltage

VFM

2.25

V

IFM =3000 A; Tj = 150 oC

Threshold voltage

VFO

1.38

Tj = 150 oC

Forward slope resistance

rF

0.29

mΩ

Tj = 150 oC

Reverse Recovery Current (4)

IRM(REC)

-

280

A

IFM = 1000 A; dIF/dt = 60 A/ms,

Tj = 150 oC

Reverse Recovery Charge (4)

Qrr

-

2300

mC

Reverse Recovery Time (4)

tRR

-

8.5

ms

THERMAL AND MECHANICAL CHARACTERISTICS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+150

oC

Storage temperature

Tstg

-40

+150

oC

Thermal resistance - junction to case

RQ (j-c)

0.011

K/W

Double sided cooled

Single sided cooled

Thermal resistance - case to sink

RQ (c-s)

0,.022

K/W

Double sided cooled

Single sided cooled

Mounting force

P

37

47

-

kN

Weight

W

1700

g

About

CASE OUTLINE AND DIMENSIONS

YZPST-M2639ZC450-1



Sym

A

B

C

D

H

mm

109

73

98

3.5×3

36±1




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Product Categories : Semiconductor Disc Devices(Capsule Type) > Fast Recovery Diode

Send Inquiry

John chang

Mr. John chang

Tel:86-514-87782298

Fax:86-514-87782297

Mobile Phone:+8613805278321Contact me with Whatsapp

Email:info@yzpst.com

Address: 3rd Floor, Weiheng Building No.20 B Area, Yangzhou, Jiangsu

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