Application of Transient Voltage Suppression Diodes (TVS Devices) in Protection Transistors

5V, 35pF, bidirectional ESD protection diode

Various transient voltages can damage the transistor EB junction or CE junction breakdown. In particular, when the transistor collector is inductive (coil, transformer, motor) load, a high voltage back EMF is generated, which often damages the transistor. The construction uses a TVS tube as a protector.