1011gn-700elm rf transistor
The 1011gn-700elm transistors offer unmatched performance including 700w peak power, 21db power gain, and 70% drain efficiency at 1030 mhz to reduce overall drain current and heat dissipation. Other key product features include:
Short-pulse and long-pulse intermittent modes: elm=2.4 ms, 64% and 6.4% ltd
Excellent output power: 700w
High power gain: >21 db min Controlled dynamic range: Incremental 1.0db for a total of 15 db
Drain Bias -vdd:+65v
The system benefits realized using gan on sic high electron mobility transistors (hemt) include:
A single-ended design with simplified impedance matching replaces the higher peak power and power gain of lower-power devices that require additional synthesis to reduce system power amplification stages and the final power stage. The synthesized single-stage pair provides 1.3kw with margins Power, four-way combination provides high operating voltage of 4kW overall system power 65V, reduces power supply size and robustness of DC current demand, improves system yield amplifier size by 50% compared to using si bjt or ldmos process devices
Packaging and delivery
The 1011gn-700elm is available in a single-ended package with 100% high-temperature gold (au) metallized and solder-sealed leads for long-term military reliability. Metso can lend a demonstration unit to customers for several weeks, but due to the cost of the product, no free samples will be provided. Now lend a demonstration unit to qualified customers and provide a technical data sheet on the company's website. Microsemi Corporation (NASDAQ: mscc), a leading provider of power management, safety, reliability and high performance semiconductor technology products, announces the launch of air traffic control for high-power air traffic control. The first product in the radio frequency (RF) transistor series for secondary surveillance radio (SSR) applications is 1011gn-700elm. Ssr is used to send information to aircraft equipped with radar transponders and collect information, allowing the air traffic control system to identify, track and measure the position of a specific aircraft. The operating frequency of Megosin's new 700W peak 1011gn-700elm device is 1030mhz, and it supports short pulse and long pulse extended length information (elm). The new transistor is based on a silicon carbide substrate ganon sic technology that is particularly suitable for high power electronics applications.
MGI's rf integrated system product department said: "We are actively promoting the development of next-generation ganon sic power devices and grasping opportunities for ever-increasing higher-performance aerospace and military applications. By releasing new products, we now offer a power of 250. , 500 and 700W high reliability ganon sic transistors for secondary surveillance radar search and tracking applications. We are also developing a number of other ganon sic transistor products that will be available later this year."
The upcoming products of Microsemi include multiple pulsed high-power ganon sic transistors for l, s, and c-band radar systems, as well as a full set of gan microwave power devices, including s-band radar models: 2729gn-150, 2729gn -270,2731 gn-110m, 2731gn-200m, 3135gn-100m, 3135gn-170m, 2735gn-35m and 2735gn-100m. Several new products under development include l-band avionics for 960-1215 mhz; l-band radars covering 1200-1400 mhz; and higher power devices covering 2.7-2.9 GHz band radars.
