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Frequency power inverter thyristor r1275

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Basic Info

Model No.: YZPST-R1275NS21L

Additional Info

Productivity: 100

Brand: YZPST

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 1000

Certificate: ISO9001-2008,ROHS

HS Code: 85413000

Port: Shanghai

Product Description

High Power Thyristor Inverter

YZPST-R1275NS21L

APPLICATIONS of the High Power Thyristor Inverter, PSTR1275NS21L Features of the Power Inverter Thyristor R1275: Interdigitated Amplifying Gate Configuration . High dV/dt Capability. Pressure Assembled Device. All Diffused Structure, Guaranteed Maximum Turn-Off Time.


High Power Thyristor Inverter

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)

1275


A

Tc=55oC

RMS value of on-state current

ITRMS

1870


A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

ITSM

21400


18900

A


A

8.3 msec (60Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t

2.66x106

A2s

8.3 msec and 10.0 msec

Latching current

IL

1000

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

500

mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM


1.90


V

ITM = 2000 A; Duty cPSTCle £ 0.01%

Critical rate of rise of on-state

current (5, 6)

di/dt


1000


A/ms

Switching from VDRM£ 1000 V,

non-repetitive


Gating


Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

200


W

tp = 40 us

Average gate power dissipation

PG(AV)

5

W


Peak gate current

IGM

10

A


Gate current required to trigger all units

IGT

300

150

125

mA

mA

mA

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = +25 oC

VD = 6 V;RL = 3 ohms;Tj = +125oC

Gate voltage required to trigger all units



VGT

0.30

5

3


V

V

V

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = 0-125oC

VD = Rated VDRM; RL = 1000 ohms;

Tj = + 125 oC

Peak negative voltage

VGRM


5


V




Dynamic


Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

td

1.5

0.7

ms

ITM = 500 A; VD = Rated VDRM

Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms

Turn-off time (with VR = -50 V)

tq

40


ms

ITM = 1000 A; di/dt = 25 A/ms;VR³ -50 V; Re-applied dV/dt = 200 V/ms linear to 80% VDRM; VG = 0;

Tj = 125 oC; Duty cPSTCle ³ 0.01%

Reverse recovery charge

Qrr

*

2000

mC

ITM = 1000 A; di/dt = 25 A/ms;VR³ -50 V

* For guaranteed max. value, contact factory.


THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125


oC


Storage temperature

Tstg

-40

+150

oC


Thermal resistance - junction to case

RQ (j-c)


0.023

0.046

oC/W

Double sided cooled

Single sided cooled

Thermal resistamce - case to sink

RQ (j-c)


0.010

0.020

oC/W

Double sided cooled *

Single sided cooled *

Mounting force

P

19.5

21

kN


* Mounting surfaces smooth, flat and greased

Note : for case outline and dimensions, see case outline drawing in page 3 of this Technical Data


Outline Drawing

High Power Thyristor Inverter High Power Thyristor Inverter






Power Inverter Thyristor r1275

Power Inverter Thyristor r1275


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Product Categories : Semiconductor Disc Devices(Capsule Type) > Inverter Thyristor

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