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Home> Products> Semiconductor Disc Devices(Capsule Type)> Inverter Thyristor> Frequency power inverter thyristor r1275
Frequency power inverter thyristor r1275
Frequency power inverter thyristor r1275
Frequency power inverter thyristor r1275
Frequency power inverter thyristor r1275
Frequency power inverter thyristor r1275

Frequency power inverter thyristor r1275

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Port:Shanghai
Product Attributes

Model No.YZPST-R1275NS21L

BrandYZPST

Product Description

High Power Thyristor Inverter 

YZPST-R1275NS21L

APPLICATIONS of the High Power Thyristor Inverter, PSTR1275NS21L Features of the Power Inverter Thyristor R1275: Interdigitated Amplifying Gate Configuration  High dV/dt CapabilityPressure Assembled Device. All Diffused Structure,  Guaranteed Maximum Turn-Off Time.  


High Power Thyristor Inverter

  

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)

 

  1275


A

Tc=55oC

RMS value of on-state current

ITRMS

 

  1870


A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

 

ITSM

 

21400


18900

 

A


A

8.3 msec (60Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t

 

2.66x106

 

A2s

8.3 msec and 10.0 msec

Latching current

IL

 

     1000

 

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

 

     500

 

mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM


     1.90


V

ITM = 2000 A; Duty cPSTCle £ 0.01%

Critical rate of rise of on-state

current (5, 6)

di/dt


      1000


A/ms

Switching from VDRM£ 1000 V,

non-repetitive


Gating


Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

 

200


W

tp = 40 us

Average gate power dissipation

PG(AV)

 

5

 

W


Peak gate current

IGM

 

10

 

A


Gate current required to trigger all units

IGT

 

300

150

125

 

mA

mA

mA

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = +25 oC

VD = 6 V;RL = 3 ohms;Tj = +125oC

Gate voltage required to trigger all units



VGT

 

 

0.30

5

3


 

V

V

V

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = 0-125oC

VD = Rated VDRM; RL = 1000 ohms;

Tj = + 125 oC

Peak negative voltage

VGRM


5


V




Dynamic


Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

td

 

    1.5

0.7

ms

ITM = 500 A; VD = Rated VDRM

Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms

Turn-off time (with VR = -50 V)

tq

 

    40


 

ms

ITM = 1000 A; di/dt = 25 A/ms;VR³ -50 V; Re-applied dV/dt = 200 V/ms linear to 80% VDRM; VG = 0;

Tj = 125 oC; Duty cPSTCle ³ 0.01%

Reverse recovery charge

Qrr

 

      *

2000

mC

ITM = 1000 A; di/dt = 25 A/ms;VR³ -50 V

                                                                              * For guaranteed max. value, contact factory.


THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125


oC


Storage temperature

Tstg

-40

+150

 

oC


Thermal resistance - junction to case

RQ (j-c)


0.023

0.046

 

oC/W

Double sided cooled

Single sided cooled

Thermal resistamce - case to sink

RQ (j-c)


0.010

0.020

 

oC/W

Double sided cooled *

Single sided cooled *

Mounting force

P

19.5

21

 

kN


                                                                                  * Mounting surfaces smooth, flat and greased

  Note : for case outline and dimensions, see case outline drawing in page 3 of this Technical Data


Outline Drawing

 High Power Thyristor Inverter High Power Thyristor Inverter






Power Inverter Thyristor r1275

Power Inverter Thyristor r1275


Home> Products> Semiconductor Disc Devices(Capsule Type)> Inverter Thyristor> Frequency power inverter thyristor r1275
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