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Home > Products > Semiconductor Disc Devices(Capsule Type) > Inverter Thyristor > High power inverter thyristor C458PB

High power inverter thyristor C458PB

High power inverter thyristor C458PB

Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Delivery Time: 30 Days

Basic Info

    Model No.: YZPST-C458PB

Additional Info

    Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

    Productivity: 100

    Brand: YZPST

    Transportation: Ocean,Air

    Place of Origin: China

    Supply Ability: 1000

    Certificate: ISO9000

    HS Code: 85413000

    Port: SHANGHAI

Product Description

High Power Thyristor

YZPST-DCR1020SF65-1

application of thyristors dc motor thyristor control Pressure Assembled Device thyristorAll ratings are specified for Tj=25 oC unless otherwise stated.

(1) All voltage ratings are specified for an applied 50Hz/60zHz sinusoidal waveform over the temperature range -40 to +125 oC.

(2) 10 msec. max. pulse width

(3) Maximum value for Tj = 125 oC.

(4) Minimum value for linear and exponential waveshape to 80% rated VDRM. Gate open. Tj = 125 oC.

(5) Non-repetitive value.

(6) The value of di/dt is established in accordance with EIA/NIMA Standard RS-397, Section 5-2-2-6. The value defined would be in addi-

tion to that obtained from a snubber circuit, comprising a 0.2 F capacitor and 20 ohms resistance in parallel with the thristor under test.

Features: . All Diffused Structure . Center Amplifying Gate Configuration . Blocking capabilty up to 4200 volts

. Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device

 High Power Thyristor

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)

640

A

Sinewave,180o

conduction,T =60oC

c

RMS value of on-state current

ITRMS

1005

A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

ITSM

-

8.5

KA KA

8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, T = 125

j

oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, T = 125

j

oC

I square t

I2t

0.36x106

A2s

8.3 msec and 10.0 msec

Latching current

IL

600

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

200

mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM

3.6

V

ITM = 1800 A; Duty cPSTCle

0.01%; T = 25 oC

j

Critical rate of rise of on-state current (5, 6)

di/dt

-

A/ s

Switching from VDRM 1000 V, non-repetitive

Critical rate of rise of on-state current (6)

di/dt

100

A/ s

Switching from VDRM 1000 V

ELECTRICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

150

W

tp = 40 us

Average gate power dissipation

PG(AV)

5

W

Peak gate current

IGM

-

A

Gate current required to trigger all units

IGT

-

300

-

mA mA mA

V = 6 V;R = 3 ohms;T = -40 oC

D L j

V = 6 V;R = 3 ohms;T = +25 oC

D L j

V = 6 V;R = 3 ohms;T = +125oC

D L j

Gate voltage required to trigger all units

V

-

3.0

-

V V V

V = 6 V;R = 3 ohms;T = -40 oC

D L j

V = 6 V;R = 3 ohms;T = 0-125oC

D L j

VD = Rated VDRM; RL = 1000 ohms;

T = + 125 oC

j

Peak negative voltage

VGRM

5

V


Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

150

W

tp = 40 us

Average gate power dissipation

PG(AV)

5

W

Peak gate current

IGM

-

A

Gate current required to trigger all units

IGT

-

300

-

mA mA mA

V = 6 V;R = 3 ohms;T = -40 oC

D L j

V = 6 V;R = 3 ohms;T = +25 oC

D L j

V = 6 V;R = 3 ohms;T = +125oC

D L j

Gate voltage required to trigger all units

V

-

3.0

-

V V V

V = 6 V;R = 3 ohms;T = -40 oC

D L j

V = 6 V;R = 3 ohms;T = 0-125oC

D L j

VD = Rated VDRM; RL = 1000 ohms;

T = + 125 oC

j

Peak negative voltage

VGRM

5

V

Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

td

-

0.5

s

ITM = 50 A; VD = Rated VDRM Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 s; tp = 20 s

Turn-off time (with VR = -50 V)

tq

-

600

s

ITM = 1000 A; di/dt = 25 A/ s;

VR -50 V; Re-applied dV/dt = 20

V/ s linear to 80% VDRM; VG = 0;

T = 125 oC; Duty cPSTCle

j

0.01%

Reverse recovery charge

Qrr

*

C

ITM = 1000 A; di/dt = 25 A/ s; VR -50 V

* For guaranteed max. value, contact factory.

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

oC

Storage temperature

Tstg

-40

+125

oC

Thermal resistance - junction to case

R (j-c)

0.022

0.052

o

C/W

Double sided cooled

Single sided cooled

Thermal resistamce - case to sink

R (c-s)

0.004

0.008

o

C/W

Double sided cooled * Single sided cooled *

Thermal resistamce - junction to sink

R (j-s)

-

-

o

C/W

Double sided cooled * Single sided cooled *

Mounting force

P

18

22

kN

Weight

W

-

g

* Mounting surfaces smooth, flat and greased

CASE OUTLINE AND DIMENSIONS

 High Power Thyristor

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