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Home> Products> Semiconductor Disc Devices(Capsule Type)> Inverter Thyristor> 1200V power thyristor for inverter for inverter
1200V power thyristor for inverter for inverter
1200V power thyristor for inverter for inverter
1200V power thyristor for inverter for inverter

1200V power thyristor for inverter for inverter

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Product Attributes

Model No.YZPST-C458PB-1

BrandYZPST

Packaging & Delivery
Package Type : 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging
Product Description

  HIGH Power Thyristor For Inverter AND CHOPPER APPLICATIONS

YZPST-C458PB


Features:

. All Diffused Structure

. Interdigitated Amplifying Gate Configuration                  

. Guaranteed Maximum Turn-Off Time

. High dV/dt Capability

. Pressure Assembled Device



ELECTRICAL CHARACTERISTICS AND RATINGS

Blocking - Off State

Device Type

VRRM (1)

VDRM (1)

VRSM (1)

C458PB

  1200

  1200

  1300

         VRRM = Repetitive peak reverse voltage

         VDRM = Repetitive peak off state voltage

         VRSM = Non repetitive peak reverse voltage (2)

Repetitive peak reverse leakage and off state leakage

IRRM / IDRM

 

10 mA

35 mA (3)

Critical rate of voltage rise

dV/dt (4)

600V/msec

Conducting - on state

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)

 

  1200

 

A

Tc=85oC

RMS value of on-state current

ITRMS

 

  1570

 

A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

 

ITSM

 

18400

  

16900

 

A

 

A

8.3 msec (60Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t

 

1.66x106

 

A2s

8.3 msec and 10.0 msec

Latching current

IL

 

     1000

 

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

 

     500

 

mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM

 

     2.60

 

V

ITM =3000 A; Duty cPSTCle £ 0.01%

Critical rate of rise of on-state

current (5, 6)

di/dt

 

      600

 

A/ms

Switching from VDRM £ 1000 V,

non-repetitive

Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

 

200

 

W

tp = 40 us

Average gate power dissipation

PG(AV)

 

5

 

W

 

Peak gate current

IGM

 

10

 

A

 

Gate current required to trigger all units

IGT

 

300

150

125

 

mA

mA

mA

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = +25 oC

VD = 6 V;RL = 3 ohms;Tj = +125oC

Gate voltage required to trigger all units

 

 

VGT

 

 

0.30

5

3

 

 

V

V

V

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = 0-125oC

VD = Rated VDRM; RL = 1000 ohms;

Tj = + 125 oC

Peak negative voltage

VGRM

 

5

 

V

 

Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

td

 

    1.5

0.7

ms

ITM = 500 A; VD = Rated VDRM

Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms

Turn-off time (with VR = -50 V)

tq

 

   19

       

 

ms

ITM = 1000 A; di/dt = 25 A/ms;

VR ³ -50 V; Re-applied dV/dt = 200 V/ms linear to 80% VDRM; VG = 0;

Tj = 125 oC; Duty cPSTCle ³ 0.01%

Reverse recovery charge

Qrr

 

      *

2000

mC

ITM = 1000 A; di/dt = 25 A/ms;

VR ³ -50 V

                                                      * For guaranteed max. value, contact factory.                                          

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

 

oC

 

Storage temperature

Tstg

-40

+150

 

oC

 

Thermal resistance - junction to case

RQ (j-c)

 

0.023

0.046

 

oC/W

Double sided cooled

Single sided cooled

Thermal resistamce - case to sink

RQ (j-c)

 

0.010

0.020

 

oC/W

Double sided cooled *

Single sided cooled *

Mounting force

P

19.5

21

 

kN

 

                                                                                   * Mounting surfaces smooth, flat and greased

     Note : for case outline and dimensions, see case outline drawing in page 3 of this Technical Data


CASE OUTLINE AND DIMENSIONS

C458PB thyristor

A:  47  mm    B:  74  mm     C:  66  mm      E:  26  mm

Home> Products> Semiconductor Disc Devices(Capsule Type)> Inverter Thyristor> 1200V power thyristor for inverter for inverter
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