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C458PB High power inverter thyristor

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    Delivery Time: 30 Days

Basic Info

Model No.: YZPST-C458PB

Additional Info

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity: 100

Brand: YZPST

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 1000

Certificate: ISO9000

HS Code: 85413000

Port: SHANGHAI

Product Description

HIGH Power Thyristor For Inverter AND CHOPPER APPLICATIONS

YZPST-C458PB

Features:

. All Diffused Structure

. Interdigitated Amplifying Gate Configuration

. Guaranteed Maximum Turn-Off Time

. High dV/dt Capability

. Pressure Assembled Device

ELECTRICAL CHARACTERISTICS AND RATINGS

Blocking - Off State

Device Type

VRRM (1)

VDRM (1)

VRSM (1)

C458PB

1200

1200

1300

VRRM = Repetitive peak reverse voltage

VDRM = Repetitive peak off state voltage

VRSM = Non repetitive peak reverse voltage (2)

Repetitive peak reverse leakage and off state leakage

IRRM / IDRM

10 mA

35 mA (3)

Critical rate of voltage rise

dV/dt (4)

600V/msec

Conducting - on state

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)

1200

A

Tc=85oC

RMS value of on-state current

ITRMS

1570

A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

ITSM

18400

16900

A

A

8.3 msec (60Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t

1.66x106

A2s

8.3 msec and 10.0 msec

Latching current

IL

1000

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

500

mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM

2.60

V

ITM =3000 A; Duty cPSTCle £ 0.01%

Critical rate of rise of on-state

current (5, 6)

di/dt

600

A/ms

Switching from VDRM £ 1000 V,

non-repetitive

Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

200

W

tp = 40 us

Average gate power dissipation

PG(AV)

5

W

Peak gate current

IGM

10

A

Gate current required to trigger all units

IGT

300

150

125

mA

mA

mA

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = +25 oC

VD = 6 V;RL = 3 ohms;Tj = +125oC

Gate voltage required to trigger all units

VGT

0.30

5

3

V

V

V

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = 0-125oC

VD = Rated VDRM; RL = 1000 ohms;

Tj = + 125 oC

Peak negative voltage

VGRM

5

V

Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

td

1.5

0.7

ms

ITM = 500 A; VD = Rated VDRM

Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms

Turn-off time (with VR = -50 V)

tq

19

ms

ITM = 1000 A; di/dt = 25 A/ms;

VR ³ -50 V; Re-applied dV/dt = 200 V/ms linear to 80% VDRM; VG = 0;

Tj = 125 oC; Duty cPSTCle ³ 0.01%

Reverse recovery charge

Qrr

*

2000

mC

ITM = 1000 A; di/dt = 25 A/ms;

VR ³ -50 V

* For guaranteed max. value, contact factory.

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

oC

Storage temperature

Tstg

-40

+150

oC

Thermal resistance - junction to case

RQ (j-c)

0.023

0.046

oC/W

Double sided cooled

Single sided cooled

Thermal resistamce - case to sink

RQ (j-c)

0.010

0.020

oC/W

Double sided cooled *

Single sided cooled *

Mounting force

P

19.5

21

kN

* Mounting surfaces smooth, flat and greased

Note : for case outline and dimensions, see case outline drawing in page 3 of this Technical Data


CASE OUTLINE AND DIMENSIONS

C458PB thyristor

A: 47 mm B: 74 mm C: 66 mm E: 26 mm

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Product Categories : Semiconductor Disc Devices(Capsule Type) > Inverter Thyristor

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