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High Power Drives Thyristor Power Control 100A

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    Incoterm: FOB,CFR,CIF
    Delivery Time: 30 Days

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Basic Info

Model No.: YZPST-TO94-KP100A06

Additional Info

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity: 100

Brand: YZPST

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 1000

Certificate: ISO9001-2008,ROHS

HS Code: 85413000

Port: Shanghai

Product Description


Phase Control Thyristor

YZPST-TO94-KP100A06

Features of the phase control thyristor: 1. all fiffused design 2. high current capabilities 3. high surge current capabilities 4. high rates voltages 5. high DV/DT 6. low gate current 7. dynamic gate 8. low thermal impedance. The typical applications of the High Power Thyristor is that the module has high power drives, DC motor control, high voltage power supplies, medium power switching and DC power supplies.




Maximum Ratings And Characteristics

Symbol

Parameter

Values

Units

Test Conditions

ON-STATE

ITAV

Mean on-state current

-

A

Sinewave,180° conduction,Tc=100°C

ITRMS

RMS value of on-state current

100

A

Nominal value

ITSM

Peak one cycle surge

(non repetitive) current

900

A

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 °C

I2t

I square t

4050

A2s

8.3 msec and 10.0 msec

IL

Latching current

100

mA

VD = 12 V; RL= 12 ohms

IH

Holding current

30

mA

VD = 12 V; I = 1 A

VTM

Peak on-state voltage

2.0

V

ITM = 150 A; Duty cycle £ 0.01%;

Tj = 25 °C

di/dt

Critical rate of rise

of on-state current

non-repetitive

300

A/ms

Gate drive 20V, 20Ω, tr≤1μs, Tj=Tjmax, anode voltage≤80% VDRM

repetitive

50

BLOCKING

VDRM

VRRM

Repetitive peak off state voltage

Repetitive peak reverse voltage

600

V

VDSM

VRSM

Non repetitive peak off state voltage

Non repetitive peak reverse voltage

700

V

IDRM

IRRM

Repetitive peak off state current Repetitive peak reverse current

10

mA

Tj = 125 °C ,VRRM VDRM applied

dV/dt

Critical rate of voltage rise

100

V/ms

TJ=TJmax, linear to 80% rated VDRM

TRIGGEING

PG(AV)

Average gate power dissipation

-

W

PGM

Peak gate power dissipation

-

W

IGM

Peak gate current

-

A

IGT

Gate trigger current

200

mA

TC = 25 °C

VGT

Gate trigger voltage

3.0

V

TC = 25 °C

VT(T0)

Treshold voltage

1

V

rT

Slope resistance

2.4

VGD

Gate non-trigger voltage

0.2

V

Tj = 125 °C

SWITCHING

tq

Turn-off time

-

ms

Tj = 125 °C

td

Delay time

-

Gate current 1A, di/dt=1A/μs,

Vd=0.67%VDRM, TJ=25 °C

Qrr

Reverse recovery charge

-

Thermal And Mechanical

Symbol

Parameter

Values

Units

Test Conditions

Tj

Operating temperature

-40~125

°C

Tstg

Storage temperature

-40~150

°C

R th (j-c)

Thermal resistance - junction to case

0.4

°C/W

DC operation ,Single sided cooled

R th (c-s)

Thermal resistance - case to sink

0.08

°C/W

Single sided cooled

P

Mounting force

-

Nm

W

Weight

-

g

about


Detailed Images
Phase Control Thyristors YZPST-TO94-KP100A06

Looking for ideal High Power Drives Thyristor Manufacturer & supplier ? We have a wide selection at great prices to help you get creative. All the Hot Sale Thyristor are quality guaranteed. We are China Origin Factory of Thyristor Power Control 100A. If you have any question, please feel free to contact us.

Product Categories : Semiconductor Stud Devices > Phase Control Stud Thyristor

Product Images

  • High Power Drives Thyristor Power Control 100A
  • High Power Drives Thyristor Power Control 100A
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