High Power Drives Thyristor Power Control 100A
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Incoterm: | FOB,CFR,CIF |
Transportation: | Ocean,Air |
Port: | Shanghai |
Payment Type: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Transportation: | Ocean,Air |
Port: | Shanghai |
Model No.: YZPST-TO94-KP100A06
Brand: YZPST
Package Type | : | 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging |
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YZPST-TO94-KP100A06
Features of the phase control thyristor: 1. all fiffused design 2. high current capabilities 3. high surge current capabilities 4. high rates voltages 5. high DV/DT 6. low gate current 7. dynamic gate 8. low thermal impedance. The typical applications of the High Power Thyristor is that the module has high power drives, DC motor control, high voltage power supplies, medium power switching and DC power supplies.
Maximum Ratings And Characteristics
Symbol | Parameter | Values | Units | Test Conditions | |
ON-STATE |
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ITAV | Mean on-state current | - | A | Sinewave,180° conduction,Tc=100°C | |
ITRMS | RMS value of on-state current | 100 | A | Nominal value | |
ITSM | Peak one cycle surge (non repetitive) current | 900 | A | 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 °C | |
I2t | I square t | 4050 | A2s | 8.3 msec and 10.0 msec | |
IL | Latching current | 100 | mA | VD = 12 V; RL= 12 ohms | |
IH | Holding current | 30 | mA | VD = 12 V; I = 1 A | |
VTM | Peak on-state voltage | 2.0 | V | ITM = 150 A; Duty cycle £ 0.01%; Tj = 25 °C
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di/dt | Critical rate of rise of on-state current | non-repetitive | 300 | A/ms | Gate drive 20V, 20Ω, tr≤1μs, Tj=Tjmax, anode voltage≤80% VDRM |
repetitive | 50 | ||||
BLOCKING |
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VDRM VRRM | Repetitive peak off state voltage Repetitive peak reverse voltage | 600 | V |
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VDSM VRSM | Non repetitive peak off state voltage Non repetitive peak reverse voltage | 700 | V |
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IDRM IRRM | Repetitive peak off state current Repetitive peak reverse current | 10 | mA | Tj = 125 °C ,VRRM VDRM applied | |
dV/dt | Critical rate of voltage rise | 100 | V/ms | TJ=TJmax, linear to 80% rated VDRM | |
TRIGGEING |
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PG(AV) | Average gate power dissipation | - | W |
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PGM | Peak gate power dissipation | - | W |
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IGM | Peak gate current | - | A |
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IGT | Gate trigger current | 200 | mA | TC = 25 °C | |
VGT | Gate trigger voltage | 3.0 | V | TC = 25 °C | |
VT(T0) | Treshold voltage | 1 | V |
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rT | Slope resistance | 2.4 | mΩ |
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VGD | Gate non-trigger voltage | 0.2 | V | Tj = 125 °C | |
SWITCHING |
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tq | Turn-off time | - | ms | Tj = 125 °C | |
td | Delay time | - | Gate current 1A, di/dt=1A/μs, Vd=0.67%VDRM, TJ=25 °C | ||
Qrr | Reverse recovery charge | - |
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Thermal And Mechanical
Symbol | Parameter | Values | Units | Test Conditions |
Tj | Operating temperature | -40~125 | °C |
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Tstg | Storage temperature | -40~150 | °C |
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R th (j-c) | Thermal resistance - junction to case | 0.4 | °C/W | DC operation ,Single sided cooled |
R th (c-s) | Thermal resistance - case to sink | 0.08 | °C/W | Single sided cooled |
P | Mounting force | - | Nm |
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W | Weight | - | g | about |
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