High Power Thyristors 1718A CE 1800V

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    Incoterm: FOB,CFR,CIF
    Delivery Time: 30 Days

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Basic Info

Model No.: YZPST-N1718NS180

Additional Info

Productivity: 100

Brand: YZPST

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 500

Certificate: ISO9001-2008,ROHS

HS Code: 85413000

Port: Shanghai

Product Description


High Power Thyristor FOR PHASE CONTROL

YZPST-N1718NS18

Features: Pressure Assembled Device. Interdigitated Amplifying Gate Configuration . All Diffused Structure . High dV/dt Capability . . Guaranteed Maximum Turn-Off Time.

ELECTRICAL CHARACTERISTICS AND RATINGS


Blocking - Off State

VRRM (1)

VDRM (1)

VRSM (1)

1800

1800

1900

VRRM = Repetitive peak reverse voltage

VDRM = Repetitive peak off state voltage

VRSM = Non repetitive peak reverse voltage (2)

Repetitive peak reverse leakage and off state leakage

IRRM / IDRM

20 mA

100 mA (3)

Critical rate of voltage rise

dV/dt (4)

1000 V/msec


Notes:

All ratings are specified for Tj=25 oC unless otherwise stated.

(1) All voltage ratings are specified for an applied

50Hz/60zHz sinusoidal waveform over the

temperature range -40 to +125 oC.

(2) 10 msec. max. pulse width

(3) Maximum value for Tj = 125 oC.

(4) Minimum value for linear and exponential waveshape to 80% rated VDRM. Gate open. Tj = 125 oC.

(5) Non-repetitive value.

(6) The value of di/dt is established in accordance with EIA/NIMA Standard RS-397, Section 5-2-2-6. The value defined would be in addition to that obtained from a ubber circuit,comprising a 0.2 F capacitor and 20 ohmsresistance in parallel with the thristor under test.



Conducting - on state

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Max. average value of on-state current

IT(AV)M

1718

A

Sinewave,180o conduction,Tc=55oC

RMS value of on-state current

IT(RMS)m

3450

A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

ITSM

-

27.2

kA

kA

8.3 msec (60Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t

3.7x106

A2s

8.3 msec

Latching current

IL

-

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

1000

mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM

1.41

V

ITM = 2550 A

Critical rate of rise of on-state

current (5, 6)

di/dt

1000

A/ms

Switching from VDRM £ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

500

A/ms

Switching from VDRM £ 1000 V



Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

30

W

Average gate power dissipation

PG(AV)

4

W

Peak gate current

IGM

-

A

Gate current required to trigger all units

IGT

300

mA

VD = 10 V;IT=3A;Tj = +25 oC

Gate voltage required to trigger all units

VGT

3.0

V

VD = 10 V;IT=3A;Tj = +25 oC

Peak negative voltage

VRGM

5

V

Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

tgd

1.5

-

ms

VD=67% VDRM, IT=2000A, di/dt=60A/us, IFG=2A, tr=0.5us, Tj=25C

Turn-on time

tgt

2.5

-

Turn-off time (with VR = -5 V)

tq

-

170

-

ms

ITM=1000A, tp=1000us, di/dt=10A/us, Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/us

Reverse recovery current

Irm

-

A

ITM=4000A, tp=2000us, di/dt=60A/us








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 High Power Thyristors 1718A CE 1800V

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  • High Power Thyristors 1718A CE 1800V
  • High Power Thyristors 1718A CE 1800V
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