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Home > Products > Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor > High Power Thyristors 1718A CE 1800V

High Power Thyristors 1718A CE 1800V
High Power Thyristors 1718A CE 1800V
High Power Thyristors 1718A CE 1800V

High Power Thyristors 1718A CE 1800V

Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Delivery Time: 30 Days
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Basic Info

    Model No.: YZPST-N1718NS180

Additional Info

    Productivity: 100

    Brand: YZPST

    Transportation: Ocean,Air

    Place of Origin: China

    Supply Ability: 500

    Certificate: ISO9001-2008,ROHS

    HS Code: 85413000

    Port: Shanghai

Product Description


High Power Thyristor FOR PHASE CONTROL

YZPST-N1718NS18

Features: Pressure Assembled Device. Interdigitated Amplifying Gate Configuration . All Diffused Structure . High dV/dt Capability . . Guaranteed Maximum Turn-Off Time.

ELECTRICAL CHARACTERISTICS AND RATINGS


Blocking - Off State

VRRM (1)

VDRM (1)

VRSM (1)

1800

1800

1900

VRRM = Repetitive peak reverse voltage

VDRM = Repetitive peak off state voltage

VRSM = Non repetitive peak reverse voltage (2)

Repetitive peak reverse leakage and off state leakage

IRRM / IDRM

20 mA

100 mA (3)

Critical rate of voltage rise

dV/dt (4)

1000 V/msec


Notes:

All ratings are specified for Tj=25 oC unless otherwise stated.

(1) All voltage ratings are specified for an applied

50Hz/60zHz sinusoidal waveform over the

temperature range -40 to +125 oC.

(2) 10 msec. max. pulse width

(3) Maximum value for Tj = 125 oC.

(4) Minimum value for linear and exponential waveshape to 80% rated VDRM. Gate open. Tj = 125 oC.

(5) Non-repetitive value.

(6) The value of di/dt is established in accordance with EIA/NIMA Standard RS-397, Section 5-2-2-6. The value defined would be in addition to that obtained from a ubber circuit,comprising a 0.2 F capacitor and 20 ohmsresistance in parallel with the thristor under test.



Conducting - on state

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Max. average value of on-state current

IT(AV)M

1718

A

Sinewave,180o conduction,Tc=55oC

RMS value of on-state current

IT(RMS)m

3450

A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

ITSM

-

27.2

kA

kA

8.3 msec (60Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t

3.7x106

A2s

8.3 msec

Latching current

IL

-

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

1000

mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM

1.41

V

ITM = 2550 A

Critical rate of rise of on-state

current (5, 6)

di/dt

1000

A/ms

Switching from VDRM £ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

500

A/ms

Switching from VDRM £ 1000 V



Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

30

W

Average gate power dissipation

PG(AV)

4

W

Peak gate current

IGM

-

A

Gate current required to trigger all units

IGT

300

mA

VD = 10 V;IT=3A;Tj = +25 oC

Gate voltage required to trigger all units

VGT

3.0

V

VD = 10 V;IT=3A;Tj = +25 oC

Peak negative voltage

VRGM

5

V

Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

tgd

1.5

-

ms

VD=67% VDRM, IT=2000A, di/dt=60A/us, IFG=2A, tr=0.5us, Tj=25C

Turn-on time

tgt

2.5

-

Turn-off time (with VR = -5 V)

tq

-

170

-

ms

ITM=1000A, tp=1000us, di/dt=10A/us, Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/us

Reverse recovery current

Irm

-

A

ITM=4000A, tp=2000us, di/dt=60A/us








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 High Power Thyristors 1718A CE 1800V

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Product Categories : Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor

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Mr. John chang

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