Communicate with Supplier? Supplier
John chang Mr. John chang
What can I do for you?
Chat Now Contact Supplier

YANGZHOU POSITIONING TECH CO., LTD.

Products

Home > Products > Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor > High Frequency Thyristor Exported to Worldwide

High Frequency Thyristor Exported to Worldwide
High Frequency Thyristor Exported to Worldwide
High Frequency Thyristor Exported to Worldwide

High Frequency Thyristor Exported to Worldwide

Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Delivery Time: 30 Days
Download:

Basic Info

    Model No.: YZPST-R0929LC12A

Additional Info

    Productivity: 100

    Brand: YZPST

    Transportation: Ocean,Air

    Place of Origin: China

    Supply Ability: 500

    Certificate: ISO9001-2008,ROHS

    HS Code: 85413000

    Port: SHANGHAI

Product Description


Economic and Efficient High Frequency Thyristor Exported to Worldwide

YZPST-R0929LC12A


High Power Thyristor FOR PHASE CONTROL APPLICATIONS


Features of the THYRISTOR 1200V are Interdigitated Amplifying Gate Configuration. All Diffused Structure, Guaranteed Maximum Turn-Off Time. Pressure Assembled Device

and High dV/dt Capability.


ELECTRICAL CHARACTERISTICS AND RATINGS


Blocking - Off State


VRRM (1)

VDRM (1)

VRSM (1)

1200

1200

1300

VRRM = Repetitive peak reverse voltage

VDRM = Repetitive peak off state voltage

VRSM = Non repetitive peak reverse voltage (2)

Repetitive peak reverse leakage and off state leakage

IRRM / IDRM

15 mA

70 mA (3)

Critical rate of voltage rise

dV/dt (4)

200 V/msec



Notes:

All ratings are specified for Tj=25 oC unless otherwise stated.

(1) All voltage ratings are specified for an applied 50Hz/60zHz sinusoidal waveform over the temperature range -40 to +125 oC.

(2) 10 msec. max. pulse width

(3) Maximum value for Tj = 125 oC.

(4) Minimum value for linear and exponential waveshape to 80% rated VDRM. Gate open. Tj = 125 oC.

(5) Non-repetitive value.

(6) The value of di/dt is established in accordance with EIA/NIMA Standard RS-397, Section 5-2-2-6. The value defined would be in addition to that obtained from a ubber circuit,comprising a 0.2 F capacitor and 20 ohmsresistance in parallel with the thristor under test.


Conducting - on state

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Max. average value of on-state current

IT(AV)M

929

A

Sinewave,180o conduction,Tc=55oC

RMS value of on-state current

IT(RMS)m

1893

A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

ITSM

-

9.0

kA

kA

8.3 msec (60Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t

405x103

A2s

8.3 msec

Latching current

IL

-

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

1000

mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM

2.04

V

ITM = 1400 A

Critical rate of rise of on-state

current (5, 6)

di/dt

1500

A/ms

Switching from VDRM £ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

1000

A/ms

Switching from VDRM £ 1000 V

Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

30

W

Average gate power dissipation

PG(AV)

2

W

Peak gate current

IGM

-

A

Gate current required to trigger all units

IGT

300

mA

VD = 10 V;IT=3A;Tj = +25 oC

Gate voltage required to trigger all units

VGT

3.0

V

VD = 10 V;IT=3A;Tj = +25 oC

Peak negative voltage

VRGM

5

V

Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

tgd

1.0

-

ms

VD=67% VDRM, IT=2000A, di/dt=60A/us, IFG=2A, tr=0.5us, Tj=25C

Turn-on time

tgt

2.0

-

Turn-off time (with VR = -5 V)

tq

-

10

-

ms

ITM=1000A, tp=1000us, di/dt=60A/us, Vr=50V, Vdr=33%VDRM, dVdr/dt=200V/us

Reverse recovery current

Irm

-

A

ITM=4000A, tp=2000us, di/dt=60A/us

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

oC

Storage temperature

Tstg

-40

+150

oC

Thermal resistance - junction to case

RQ (j-c)

-

-

K/kW

Double sided cooled

Single sided cooled

Thermal resistamce - case to sink

RQ (c-s)

-

-

K/kW

Double sided cooled *

Single sided cooled *

Thermal resistance - junction to case

RQ (j-s)

32

64

K/kW

Double sided cooled

Single sided cooled

Mounting force

F

10

20

-

kN

Weight

W

-

Kg

about

* Mounting surfaces smooth, flat and greased

Note : for case outline and dimensions, see case outline drawing in page 3 of this Technical Data



Detailed images


YZPST-R0929LC12A HIGH POWER THYRISTOR

Looking for ideal Efficient High Frequency Thyristor Manufacturer & supplier ? We have a wide selection at great prices to help you get creative. All the R0929LC12A Thyristor High Frequency are quality guaranteed. We are China Origin Factory of Thyristor Exported to Worldwide. If you have any question, please feel free to contact us.

Product Categories : Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor

Send Inquiry

John chang

Mr. John chang

Email:

info@yzpst.com

Send Inquiry

Tel:86-514-87782298

Fax:86-514-87782297

Mobile Phone:+8613805278321Contact me with Whatsapp

Email:info@yzpst.com

Address: 3rd Floor, Weiheng Building No.20 B Area, Yangzhou, Jiangsu

苏ICP备05018286号-1