High Power Thyristor Phase Control

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    Incoterm: FOB,CFR,CIF
    Delivery Time: 30 Days

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Basic Info

Model No.: YZPST-KP738LT

Additional Info

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity: 100

Brand: YZPST

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 500

Certificate: ISO9001-2008

HS Code: 85413000

Port: SHANGHAI

Product Description

High Power Thyristor Phase Control

PST-KP738LT

KP738LT thyristor


Features: . All Diffused Structure . Linear Amplifying Gate Configuration . Blocking capabilty up to 2200 volts

. Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device


Conducting - on state

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)

3200


A

Sinewave,180o conduction,Ths=85oC

Peak one cpstcle surge

(non repetitive) current

ITSM

45000


41500

A


A

8.3 msec (60Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t

8.5x106

A2s

10.0 msec

Latching current

IL

400

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

100

mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM


1.30


V

ITM = 2000 A; Duty cpstcle £ 0.01%

Tj = 25 oC

Critical rate of rise of on-state

current (5, 6)

di/dt


150


A/ms

Switching from VDRM£ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt


100


A/ms

Switching from VDRM£ 1000 V


ELECTRICAL CHARACTERISTICS AND RATINGS

Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

200


W

tp = 40 us

Average gate power dissipation

PG(AV)

5

W


Peak gate current

IGM

15

A


Gate current required to trigger all units

IGT

300

200

125

mA

mA

mA

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = +25 oC

VD = 6 V;RL = 3 ohms;Tj = +125oC

Gate voltage required to trigger all units



VGT

0.30

5

4


V

V

V

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = 0-125oC

VD = Rated VDRM; RL = 1000 ohms;

Tj = + 125 oC

Peak negative voltage

VGRM


15


V



Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

td

3.0

2.5

ms

ITM = 50 A; VD = 1500 V

Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms

Turn-off time (with VR = -50 V)

tq

400


250

ms

ITM > 2000 A; di/dt = 10 A/ms;

VR³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% VDRM; VG = 0;

Tj = 125 oC; Duty cpstcle ³ 0.01%

Reverse recovery current

Irr

200


A

ITM > 2000 A; di/dt = 10 A/ms;

VR³ -50 V


THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125


oC


Storage temperature

Tstg

-40

+150

oC


Thermal resistance - junction to case

RQ (j-c)


0.012


oC/W

Double sided cooled

Single sided cooled

Thermal resistamce - case to sink

RQ (c-s)


0.002


oC/W

Double sided cooled *

Single sided cooled *

Mounting force

P

8000

35.5

10000

44.4

lb.

kN


Weight

W



3.5

1.60

Lb.

Kg.


* Mounting surfaces smooth, flat and greased

Note : for case outline and dimensions, see case outline drawing in page 3 of this Technical Data


CASE OUTLINE AND DIMENSIONS

High Power Thyristor Phase Control PST-KP738LT

 High power thyristor phase control

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Product Categories : Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor

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  • High Power Thyristor Phase Control
  • High Power Thyristor Phase Control
  • High Power Thyristor Phase Control
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