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Home > Products > Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor > High voltage scr thyristor 6500V type scr thyristor

High voltage scr thyristor 6500V type scr thyristor
High voltage scr thyristor 6500V type scr thyristor

High voltage scr thyristor 6500V type scr thyristor

Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Delivery Time: 30 Days
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Basic Info

    Model No.: YZPST-DCR1020SF65

Additional Info

    Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

    Productivity: 100

    Brand: YZPST

    Transportation: Ocean,Air

    Place of Origin: China

    Supply Ability: 1000

    Certificate: ISO9000

    HS Code: 85413000

    Port: SHANGHAI

Product Description

High Power Thyristor

YZPST-DCR1020SF65

All ratings are specified for Tj=25 oC unless otherwise stated.

(1) All voltage ratings are specified for an applied 50Hz/60zHz sinusoidal waveform over the temperature range -40 to +125 oC.

(2) 10 msec. max. pulse width

(3) Maximum value for Tj = 125 oC.

(4) Minimum value for linear and exponential waveshape to 80% rated VDRM. Gate open. Tj = 125 oC.

(5) Non-repetitive value.

(6) The value of di/dt is established in accordance with EIA/NIMA Standard RS-397, Section 5-2-2-6. The value defined would be in addi-

tion to that obtained from a snubber circuit, comprising a 0.2 F capacitor and 20 ohms resistance in parallel with the thristor under test.

Features: . All Diffused Structure . Center Amplifying Gate Configuration . Blocking capabilty up to 4200 volts

. Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device

 High Power Thyristor

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)

640

A

Sinewave,180o

conduction,T =60oC

c

RMS value of on-state current

ITRMS

1005

A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

ITSM

-

8.5

KA KA

8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, T = 125

j

oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, T = 125

j

oC

I square t

I2t

0.36x106

A2s

8.3 msec and 10.0 msec

Latching current

IL

600

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

200

mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM

3.6

V

ITM = 1800 A; Duty cPSTCle

0.01%; T = 25 oC

j

Critical rate of rise of on-state current (5, 6)

di/dt

-

A/ s

Switching from VDRM 1000 V, non-repetitive

Critical rate of rise of on-state current (6)

di/dt

100

A/ s

Switching from VDRM 1000 V

ELECTRICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

150

W

tp = 40 us

Average gate power dissipation

PG(AV)

5

W

Peak gate current

IGM

-

A

Gate current required to trigger all units

IGT

-

300

-

mA mA mA

V = 6 V;R = 3 ohms;T = -40 oC

D L j

V = 6 V;R = 3 ohms;T = +25 oC

D L j

V = 6 V;R = 3 ohms;T = +125oC

D L j

Gate voltage required to trigger all units

V

-

3.0

-

V V V

V = 6 V;R = 3 ohms;T = -40 oC

D L j

V = 6 V;R = 3 ohms;T = 0-125oC

D L j

VD = Rated VDRM; RL = 1000 ohms;

T = + 125 oC

j

Peak negative voltage

VGRM

5

V


Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

150

W

tp = 40 us

Average gate power dissipation

PG(AV)

5

W

Peak gate current

IGM

-

A

Gate current required to trigger all units

IGT

-

300

-

mA mA mA

V = 6 V;R = 3 ohms;T = -40 oC

D L j

V = 6 V;R = 3 ohms;T = +25 oC

D L j

V = 6 V;R = 3 ohms;T = +125oC

D L j

Gate voltage required to trigger all units

V

-

3.0

-

V V V

V = 6 V;R = 3 ohms;T = -40 oC

D L j

V = 6 V;R = 3 ohms;T = 0-125oC

D L j

VD = Rated VDRM; RL = 1000 ohms;

T = + 125 oC

j

Peak negative voltage

VGRM

5

V

Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

td

-

0.5

s

ITM = 50 A; VD = Rated VDRM Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 s; tp = 20 s

Turn-off time (with VR = -50 V)

tq

-

600

s

ITM = 1000 A; di/dt = 25 A/ s;

VR -50 V; Re-applied dV/dt = 20

V/ s linear to 80% VDRM; VG = 0;

T = 125 oC; Duty cPSTCle

j

0.01%

Reverse recovery charge

Qrr

*

C

ITM = 1000 A; di/dt = 25 A/ s; VR -50 V

* For guaranteed max. value, contact factory.

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

oC

Storage temperature

Tstg

-40

+125

oC

Thermal resistance - junction to case

R (j-c)

0.022

0.052

o

C/W

Double sided cooled

Single sided cooled

Thermal resistamce - case to sink

R (c-s)

0.004

0.008

o

C/W

Double sided cooled * Single sided cooled *

Thermal resistamce - junction to sink

R (j-s)

-

-

o

C/W

Double sided cooled * Single sided cooled *

Mounting force

P

18

22

kN

Weight

W

-

g

* Mounting surfaces smooth, flat and greased

CASE OUTLINE AND DIMENSIONS

 High Power Thyristor

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Product Categories : Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor

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John chang

Mr. John chang

Email:

info@yzpst.com

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