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Home > Products > Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor > High Voltage Thyristor Control SCR kp1000A 6500V

High Voltage Thyristor Control SCR kp1000A 6500V

High Voltage Thyristor Control SCR kp1000A 6500V

Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Delivery Time: 30 Days
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Basic Info

    Model No.: YZPST-KP1000A6500V

Additional Info

    Productivity: 100

    Brand: YZPST

    Transportation: Ocean,Air

    Place of Origin: China

    Supply Ability: 1000

    Certificate: ISO9001-2008,ROHS

    HS Code: 85413000

    Port: Shanghai

Product Description

Phase Control Thyristors

YZPST-KP1000A6500V

Phase Control Thyristors 6600V is short for thyristor rectifier. It is a kind of high Power Semiconductor Device with four layers of three PN junction, also called thyristor.With the characteristics of small volume, simple structure and strong function, it is one of the most commonly used semiconductor devices.

Symbol

Definition

Conditions

min.

typ.

max.

Unit

V

max. non-repetitive reverse/forward blocking voltage

TJ = 25°C

6600

V

V

max. repetitive reverse/forward blocking voltage

TJ = 25°C

6500

V

VT

On-state voltage

IT=1000 A

TJ = 25°C

2.95

V

IT(AV)

average forward current

TC=25°C

1000

A

IT(RMS)

RMS forward current

180° sine

1140

A

RthJC

thermal resistance junction to case

22

K/KW

RthCH

thermal resistance case to heatsink

4

K/KW

ITSM

max. forward surge current

t = 10 ms; (50 Hz), sine

TJ = 25°C

9.7

kA

I²t

value for fusing

t = 10 ms; (50 Hz), sine

TJ = 25°C

470

kA²s

di/dt

Rate of rise of on-state current

TJ = 125°C; f = 50 Hz

tP=200µs;diG/dt=0.15A/µs;

IG=0.15A;VD= 2/3VDRM

repetitive

50

A/µs

non-repet

1000

A/µs

dv/dt

Maximum linear rate of rise of off-state voltage

VD= 2/3
V
DRM

RGK =∞; method 1 (linear voltage rise)

TJ = 125°C

2000

V/µs

VGT

gate trigger voltage

VD = 6V

TJ = 25°C

2.6

V

IGT

gate trigger current

VD = 6V

TJ = 25°C

400

mA

IL

latching current

TJ = 25°C

500

mA

IH

holding current

TJ = 25°C

900

mA

tgd

gate controlled delay time

TJ = 25°C

3

µs

tq

Turn-off time

VR=10 V; IT=20A; VD= 2/3
V
DRM

TJ = 150°C

600

µs

Tstg

storage temperature

-40

140

°C

TJ

virtual junction temperature

125

°C

Wt

Weight

g

F

mounting force

14

22

24

kN



Outline Drawing

High Voltage Thyristor Control SCR kp1000A 6500V

Looking for ideal High Voltage Thyristor Manufacturer & supplier ? We have a wide selection at great prices to help you get creative. All the Thyristor 1000A 6500V are quality guaranteed. We are China Origin Factory of High Voltage Thyristor. If you have any question, please feel free to contact us.

Product Categories : Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor

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Mr. John chang

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