Home > Products > Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor > Types of Center Amplifying Fast Switching Thyristor DCR1059

Types of Center Amplifying Fast Switching Thyristor DCR1059

    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF
    Delivery Time: 30 Days

Download:

Basic Info

Model No.: YZPST-DCR1059

Additional Info

Productivity: 500

Brand: YZPST

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 200

Certificate: ISO9000

HS Code: 85413000

Port: SHANGHAI

Product Description

High Power Thyristor PHASE CONTROL

YZPST-DCR1059


All ratings are specified for Tj=25 oC unless otherwise stated.

(1) All voltage ratings are specified for an applied 50Hz/60zHz sinusoidal waveform over the temperature range -40 to +125 oC.

(2) 10 msec. max. pulse width

(3) Maximum value for Tj = 125 oC.

(4) Minimum value for linear and exponential waveshape to 80% rated VDRM. Gate open. Tj = 125 oC.

(5) Non-repetitive value.

(6) The value of di/dt is established in accordance with EIA/NIMA Standard RS-397, Section 5-2-2-6. The value defined would be in addi-

tion to that obtained from a snubber circuit, comprising a 0.2 F capacitor and 20 ohms resistance in parallel with the thristor under test.


Features: . All Diffused Structure . Center Amplifying Gate Configuration . Blocking capabilty up to 2100 volts

. Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device



HIGH POWER THYRISTOR PHASE CONTROL

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)

1080

A

Sinewave,180o conduction,Tc=80oC

RMS value of on-state current

ITRMS

1700

A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

ITSM

-

18000

A

A

8.3 msec (60Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t

1.6x106

A2s

8.3 msec and 10.0 msec

Latching current

IL

-

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

-

mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM

1.45

V

ITM = 1000 A; Duty cPSTCle £ 0.01%; Tj = 25 oC

Critical rate of rise of on-state

current (5, 6)

di/dt

800

A/ms

Switching from VDRM£ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

200

A/ms

Switching from VDRM£ 1000 V


ELECTRICAL CHARACTERISTICS AND RATINGS (cont`d)

Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

-

W

tp = 40 us

Average gate power dissipation

PG(AV)

-

W

Peak gate current

IGM

-

A

Gate current required to trigger all units

IGT

-

350

-

mA

mA

mA

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = +25 oC

VD = 6 V;RL = 3 ohms;Tj = +125oC

Gate voltage required to trigger all units

VGT

-

3.0

-

V

V

V

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = 0-125oC

VD = Rated VDRM; RL = 1000 ohms;

Tj = + 125 oC

Peak negative voltage

VGRM

-

V


Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

td

-

0.7

ms

ITM = 50 A; VD = Rated VDRM

Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms

Turn-off time (with VR = -50 V)

tq

-

50

ms

ITM = 1000 A; di/dt = 25 A/ms;

VR³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% VDRM; VG = 0;

Tj = 125 oC; Duty cPSTCle ³ 0.01%

Reverse recovery charge

Qrr

*

mC

ITM = 1000 A; di/dt = 25 A/ms;

VR³ -50 V

* For guaranteed max. value, contact factory.

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

oC

Storage temperature

Tstg

-40

+150

oC

Thermal resistance - junction to case

RQ (j-c)

0.025

0.050

oC/W

Double sided cooled

Single sided cooled

Thermal resistamce - case to sink

RQ (c-s)

0.010

0.020

oC/W

Double sided cooled *

Single sided cooled *

Mounting force

P

24.5

26.7

kN

Weight

W

480

g

About



* Mounting surfaces smooth, flat and greased


CASE OUTLINE AND DIMENSIONS

Types of High Current Fast Switching Thyristor DCR1059

 high current fast switching thyristor DCR1059

Looking for ideal Fast Switching Thyristor Manufacturer & supplier ? We have a wide selection at great prices to help you get creative. All the Center Amplifying Thyristor are quality guaranteed. We are China Origin Factory of Types of Thyristor DCR1059. If you have any question, please feel free to contact us.

Product Categories : Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor

Product Images

  • Types of Center Amplifying Fast Switching Thyristor DCR1059
Email to this supplier
  • *Subject:
  • *Messages:
    Your message must be between 20-8000 characters
Communicate with Supplier?Supplier
John chang Mr. John chang
What can I do for you?
Chat Now Contact Supplier