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Capabilty Disc Powerex Thyristor DCR804 Configuration

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Basic Info

Model No.: YZPST-DCR804

Additional Info

Brand: YZPST

Transportation: Ocean,Air

Certificate: ISO9000

Port: SHANGHAI

Product Description

High Power Thyristor PHASE CONTROL

YZPST-DCR804


Characteristics of the Capsule Disc Powerex Thyristor : Guaranteed Maximum Turn-Off Time . Pressure Assembled Device

. All Diffused Structure . High dV/dt Capability .Blocking capabilty up to 2000 volts . Center Amplifying Gate Configuration

DCR804SG2121

HIGH Power Thyristor FOR PHASE CONTROL APPLICATIONS

Features: . All Diffused Structure . Center Amplifying Gate Configuration . Blocking capabilty up to 2000 volts

. Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device


ELECTRICAL CHARACTERISTICS AND RATINGS

Blocking - Off State


VRRM (1)

VDRM (1)

VRSM (1)

2000

2000

2100

VRRM = Repetitive peak reverse voltage

VDRM = Repetitive peak off state voltage

VRSM = Non repetitive peak reverse voltage (2)

Repetitive peak reverse leakage and off state leakage

IRRM / IDRM

15 mA

35 mA (3)

Critical rate of voltage rise (4)

dV/dt

200 V/msec

HIGH POWER THYRISTOR PHASE CONTROL

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)

900

A

Sinewave,180o conduction,Tc=67oC

RMS value of on-state current

ITRMS

1400

A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

ITSM

13000

12000

A

A

8.3 msec (60Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t

700

KA2s

8.3 msec and 10.0 msec

Latching current

IL

800

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

400

mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM

1.80

V

ITM = 2200A; Duty cPSTCle £ 0.01%

Critical rate of rise of on-state

current (5, 6)

di/dt

400

A/ms

Switching from VDRM£ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

150

A/ms

Switching from VDRM£ 1000 V


ELECTRICAL CHARACTERISTICS AND RATINGS (cont`d)

Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

200

W

tp = 40 us

Average gate power dissipation

PG(AV)

5

W

Peak gate current

IGM

10

A

Gate current required to trigger all units

IGT

300

150

125

mA

mA

mA

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = +25 oC

VD = 6 V;RL = 3 ohms;Tj = +125oC

Gate voltage required to trigger all units

VGT

0.15

5

3

V

V

V

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = 0-125oC

VD = Rated VDRM; RL = 1000 ohms;

Tj = + 125 oC

Peak negative voltage

VGRM

5

V


Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

td

1.5

0.7

ms

ITM = 50 A; VD = Rated VDRM

Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms

Turn-off time (with VR = -50 V)

tq

200

125

ms

ITM = 500 A; di/dt = 25 A/ms;

VR³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% VDRM; VG = 0;

Tj = 125 oC; Duty cPSTCle ³ 0.01%

Reverse recovery charge

Qrr

*

mC

ITM = 500 A; di/dt = 25 A/ms;

VR³ -50 V

* For guaranteed max. value, contact factory.


THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

oC

Storage temperature

Tstg

-40

+150

oC

Thermal resistance - junction to case

RQ (j-c)

0.040

0.080

oC/W

Double sided cooled

Single sided cooled

Thermal resistamce - case to sink

RQ (c-s)

0.015

0.030

oC/W

Double sided cooled *

Single sided cooled *

Mounting force

P

13.3

15.5

kN

Weight

W

225

g

* Mounting surfaces smooth, flat and greased

Note : for case outline and dimensions, see case outline drawing in last page of this Technical Data


CASE OUTLINE AND DIMENSIONS

Capsule Disc Powerex Thyristor DCR804

capsule disc powerex thyristor DCR804

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Product Categories : Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor

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  • Capabilty Disc Powerex Thyristor DCR804 Configuration
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