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Home > Products > Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor > Fast Control Thyristor Scr DCR604

Fast Control Thyristor Scr DCR604

Fast Control Thyristor Scr DCR604

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Incoterm: FOB,CFR,CIF
Delivery Time: 30 Days
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Basic Info

    Model No.: YZPST-DCR604

Additional Info

    Brand: YZPST

    Transportation: Ocean,Air

    Certificate: ISO9000

    Port: SHANGHAI

Product Description

High Power Thyristor Phase Control

YZPST-DCR604

DCR604SE2121 HIGH Power Thyristor FOR PHASE CONTROL APPLICATIONS


Features: All Diffused Structure. Center Amplifying Gate Configuration. Blocking capabilty up to 2000 volts. Guaranteed Maximum Turn-Off Time. High dV/dt Capability. Pressure Assembled Device


High Power Thyristor Phase Control


Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)

600

A

Sinewave,180o conduction,Tc =65oC

RMS value of on-state current

ITRMS

940

A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

ITSM

7500

7200

A

A

8.3 msec (60Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t

235000

A2s

8.3 msec and 10.0 msec

Latching current

IL

800

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

400

mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM

2.30

V

ITM = 2000 A; Duty cPSTCle £ 0.01%

Critical rate of rise of on-state

current (5, 6)

di/dt

400

A/ms

Switching from VDRM£ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

150

A/ms

Switching from VDRM£ 1000 V


ELECTRICAL CHARACTERISTICS AND RATINGS (cont`d)

Gating


Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

200

W

tp = 40 us

Average gate power dissipation

PG(AV)

5

W

Peak gate current

IGM

10

A

Gate current required to trigger all units

IGT

300

150

125

mA

mA

mA

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = +25 oC

VD = 6 V;RL = 3 ohms;Tj = +125oC

Gate voltage required to trigger all units

VGT

0.15

5

3

V

V

V

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = 0-125oC

VD = Rated VDRM; RL = 1000 ohms;

Tj = + 125 oC

Peak negative voltage

VGRM

5

V


Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

td

1.5

0.7

ms

ITM = 50 A; VD = Rated VDRM

Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms

Turn-off time (with VR = -50 V)

tq

200

125

ms

ITM = 500 A; di/dt = 25 A/ms;

VR³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% VDRM; VG = 0;

Tj = 125 oC; Duty cPSTCle ³ 0.01%

Reverse recovery charge

Qrr

*

mC

ITM = 500 A; di/dt = 25 A/ms;

VR³ -50 V

* For guaranteed max. value, contact factory.


THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

oC

Storage temperature

Tstg

-40

+150

oC

Thermal resistance - junction to case

RQ (j-c)

0.045

(1)

0.055

(2)

oC/W

Double sided cooled *

(1) @ 2000 lb.; (2) @ 800 lb.

Thermal resistamce - junction to

case

RQ (j-c)

0.090

(1)

0.110

(2)

oC/W

Single sided cooled *

(1) @ 2000 lb.; (2) @ 800 lb.

Thermal resistance - case to sink

RQ (c-s)

.030

.060

oC/W

Double sided cooled *

Single sided cooled *

Mounting force

P

3.6

11.1

kN

Weight

W

70

g


OUTLINE

Fast Control Thyristor Scr DCR604

fast control thyristor scr DCR604

Looking for ideal Fast Thyristor DCR604 Manufacturer & supplier ? We have a wide selection at great prices to help you get creative. All the Control Thyristor DCR604 are quality guaranteed. We are China Origin Factory of Thyristor Scr DCR604. If you have any question, please feel free to contact us.

Product Categories : Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor

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Mr. John chang

Email:

info@yzpst.com

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