Fast Control Thyristor Scr DCR604

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Basic Info

Model No.: YZPST-DCR604

Additional Info

Brand: YZPST

Transportation: Ocean,Air

Certificate: ISO9000

Port: SHANGHAI

Product Description

High Power Thyristor Phase Control

YZPST-DCR604

DCR604SE2121 HIGH Power Thyristor FOR PHASE CONTROL APPLICATIONS


Features: All Diffused Structure. Center Amplifying Gate Configuration. Blocking capabilty up to 2000 volts. Guaranteed Maximum Turn-Off Time. High dV/dt Capability. Pressure Assembled Device


High Power Thyristor Phase Control


Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)

600

A

Sinewave,180o conduction,Tc =65oC

RMS value of on-state current

ITRMS

940

A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

ITSM

7500

7200

A

A

8.3 msec (60Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t

235000

A2s

8.3 msec and 10.0 msec

Latching current

IL

800

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

400

mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM

2.30

V

ITM = 2000 A; Duty cPSTCle £ 0.01%

Critical rate of rise of on-state

current (5, 6)

di/dt

400

A/ms

Switching from VDRM£ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

150

A/ms

Switching from VDRM£ 1000 V


ELECTRICAL CHARACTERISTICS AND RATINGS (cont`d)

Gating


Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

200

W

tp = 40 us

Average gate power dissipation

PG(AV)

5

W

Peak gate current

IGM

10

A

Gate current required to trigger all units

IGT

300

150

125

mA

mA

mA

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = +25 oC

VD = 6 V;RL = 3 ohms;Tj = +125oC

Gate voltage required to trigger all units

VGT

0.15

5

3

V

V

V

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = 0-125oC

VD = Rated VDRM; RL = 1000 ohms;

Tj = + 125 oC

Peak negative voltage

VGRM

5

V


Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

td

1.5

0.7

ms

ITM = 50 A; VD = Rated VDRM

Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms

Turn-off time (with VR = -50 V)

tq

200

125

ms

ITM = 500 A; di/dt = 25 A/ms;

VR³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% VDRM; VG = 0;

Tj = 125 oC; Duty cPSTCle ³ 0.01%

Reverse recovery charge

Qrr

*

mC

ITM = 500 A; di/dt = 25 A/ms;

VR³ -50 V

* For guaranteed max. value, contact factory.


THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

oC

Storage temperature

Tstg

-40

+150

oC

Thermal resistance - junction to case

RQ (j-c)

0.045

(1)

0.055

(2)

oC/W

Double sided cooled *

(1) @ 2000 lb.; (2) @ 800 lb.

Thermal resistamce - junction to

case

RQ (j-c)

0.090

(1)

0.110

(2)

oC/W

Single sided cooled *

(1) @ 2000 lb.; (2) @ 800 lb.

Thermal resistance - case to sink

RQ (c-s)

.030

.060

oC/W

Double sided cooled *

Single sided cooled *

Mounting force

P

3.6

11.1

kN

Weight

W

70

g


OUTLINE

Fast Control Thyristor Scr DCR604

fast control thyristor scr DCR604

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Product Categories : Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor

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