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Semiconductor Devices DCR504 Power Thyristor

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Basic Info

Model No.: YZPST-DCR504

Additional Info

Brand: YZPST

Transportation: Ocean,Air

Certificate: ISO9000

Port: SHANGHAI

Product Description

High Power Thyristor Phase Control

YZPST-DCR504

There are many characteristics of the Semiconductor Devices DCR504 Power Thyristor. They are High dV/dt Capability . Circular Amplifying Gate Configuration . Blocking capabilty up to 1200 volts . All Diffused Structure . Guaranteed Maximum Turn-Off Time. Pressure Assembled Device.


Semiconductor Devices DCR504 Power Thyristor



Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)

300

A

Sinewave,180o conduction,Tc=65oC

RMS value of on-state current

ITRMS

480

A

Nominal value

Peak one cycle surge

(non repetitive) current

ITSM

4200

4400

A

A

8.3 msec (60Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t

68000

A2s

8.3 msec

Latching current

IL

300

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

200

mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM

2.98

V

ITM = 1500 A; Tj = 25 oC

Critical rate of rise of on-state

current (5, 6)

di/dt

300

A/ms

Switching from VDRM£ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

150

A/ms

Switching from VDRM£ 1000 V



ELECTRICAL CHARACTERISTICS AND RATINGS Gating Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

10

W

tp = 40 us

Average gate power dissipation

PG(AV)

2

W

Peak gate current

IGM

3

A

Gate current required to trigger all units

IGT

200

150

125

mA

mA

mA

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = +25 oC

VD = 6 V;RL = 3 ohms;Tj = +125oC

Gate voltage required to trigger all units

VGT

0.30

3

2.5

V

V

V

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = 0-125oC

VD = Rated VDRM; RL = 1000 ohms;

Tj = + 125 oC

Peak negative voltage

VGRM

5

V

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

td

1.0

ms

ITM = 100 A; VD = VDRM

Gate pulse: VG = 10 V; RG = 25 ohms; tr = 0.1 ms; tp = 20 ms

Turn-off time (with VR = -50 V)

tq

200

ms

ITM > 250 A; di/dt = 10 A/ms;

VR³ -50 V; Re-applied dV/dt = 20 V/ms linear to VDRM ;

Tj = 125 oC; Duty cycle ³ 0.01%

Reverse recovery charge

Qrrr

200

mCb

ITM > 400 A; di/dt = 10 A/ms;


THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

oC

Storage temperature

Tstg

-40

+150

oC

Thermal resistance - junction to case

RQ (j-c)

0.095

oC/W

Double sided cooled

Thermal resistamce - case to sink

RQ (c-s)

0.06

oC/W

Double sided cooled *

Mounting force

P

3.2

3.9

kN

Weight

W

57

g.

* Mounting surfaces smooth, flat and greased

Note : for case outline and dimensions, see case outline drawing in last page of this Technical Data


CASE OUTLINE AND DIMENSIONS.

High Power Thyristor Phase ControlSemiconductor devices DCR504 power thyristor price

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Product Categories : Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor

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