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Home> Products> Semiconductor Disc Devices(Capsule Type)> Phase Control Thyristor> Semiconductor Devices DCR504 Power Thyristor
Semiconductor Devices DCR504 Power Thyristor
Semiconductor Devices DCR504 Power Thyristor
Semiconductor Devices DCR504 Power Thyristor

Semiconductor Devices DCR504 Power Thyristor

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Product Attributes

Model No.YZPST-DCR504

BrandYZPST

Product Description

High Power Thyristor Phase Control

YZPST-DCR504 

 There are many characteristics of the Semiconductor Devices DCR504 Power Thyristor. They are High dV/dt Capability Circular Amplifying Gate Configuration . Blocking capabilty up to 1200 volts   . All Diffused Structure   Guaranteed Maximum Turn-Off Time. Pressure Assembled Device.


           Semiconductor Devices DCR504 Power Thyristor



Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)

 

300

 

A

Sinewave,180o conduction,Tc=65oC

RMS value of on-state current

ITRMS

 

480

 

A

Nominal value

Peak one cycle surge

(non repetitive) current

 

ITSM

 

4200

 

4400

 

A

 

A

8.3 msec (60Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t

 

68000

 

A2s

8.3 msec

Latching current

IL

 

 

300

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

 

 

200

mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM

 

2.98

 

V

ITM = 1500 A; Tj = 25 oC

Critical rate of rise of on-state

current (5, 6)

di/dt

 

300

 

A/ms

Switching from VDRM£ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

 

150

 

A/ms

Switching from VDRM£ 1000 V



ELECTRICAL CHARACTERISTICS AND RATINGS  Gating Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

 

10

 

W

t= 40 us

Average gate power dissipation

PG(AV)

 

2

 

W

 

Peak gate current

IGM

 

3

 

A

 

Gate current required to trigger all units

IGT

 

200

150

125

 

mA

mA

mA

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = +25 oC

VD = 6 V;RL = 3 ohms;Tj = +125oC

Gate voltage required to trigger all units

 

 

VGT

 

 

0.30

3

2.5

 

 

V

V

V

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = 0-125oC

VD = Rated VDRM; RL = 1000 ohms;

Tj = + 125 oC

Peak negative voltage

VGRM

 

5

 

V

 

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

td

 

1.0

 

ms

ITM = 100 A; VD =  VDRM

Gate pulse: VG = 10 V; RG = 25 ohms; tr = 0.1 ms; tp = 20 ms

Turn-off time (with VR = -50 V)

tq

 

200

 

 

ms

ITM > 250 A; di/dt = 10 A/ms;

VR³ -50 V; Re-applied dV/dt = 20 V/ms linear to VDRM ;

Tj = 125 oC; Duty cycle ³ 0.01%

Reverse recovery charge

Qrrr

 

200

 

mCb

ITM > 400 A; di/dt = 10 A/ms;

  


THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

 

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

 

oC

 

Storage temperature

Tstg

-40

+150

 

oC

 

Thermal resistance - junction to case

RQ (j-c)

 

0.095

 

oC/W

Double sided cooled

Thermal resistamce - case to sink

RQ (c-s)

 

0.06

 

oC/W

Double sided cooled *

Mounting force

P

3.2

3.9

 

kN

 

Weight

W

 

 

57

g.

 

* Mounting surfaces smooth, flat and greased   

Note : for case outline and dimensions, see case outline drawing in last page of this Technical Data


CASE OUTLINE AND DIMENSIONS.   

 High Power Thyristor Phase ControlSemiconductor devices DCR504 power thyristor price

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