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2100V Interdigitated Amplifying phase control Thyristor

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    Incoterm: FOB,CFR,CIF
    Delivery Time: 30 Days

Basic Info

Model No.: YZPST-R2619ZC21J

Type: Intrinsic Semiconductor

Additional Info

Productivity: 100

Brand: YZPST

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 500

Certificate: ISO9001-2008,ROHS

HS Code: 85413000

Port: Shanghai

Product Description

High Power Thyristor FOR PHASE CONTROL

YZPST-R2619ZC21J

Features:

. All Diffused Structure

. Interdigitated Amplifying Gate Configuration

. Guaranteed Maximum Turn-Off Time

. High dV/dt Capability

. Pressure Assembled Device



ELECTRICAL CHARACTERISTICS AND RATINGS

Blocking - Off State

VRRM (1)

VDRM (1)

VRSM (1)

2100

2100

2200

VRRM = Repetitive peak reverse voltage

VDRM = Repetitive peak off state voltage

VRSM = Non repetitive peak reverse voltage (2)


Repetitive peak reverse leakage and off state leakage

IRRM / IDRM

20 mA

200 mA (3)

Critical rate of voltage rise

dV/dt (4)

200 V/msec

Conducting - on state

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)M

2619

A

Sinewave,180o conduction,Tc=55oC

RMS value of on-state current

ITRMS

5227

A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

ITSM

33.8

37.2

kA

kA

8.3 msec (60Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t

5.71x106

A2s

8.3 msec

Latching current

IL

-

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

1000

mA

VD = 24 V; I =2.5 A

Peak on-state voltage

VTM

2.3

V

ITM = 4000 A

Critical rate of rise of on-state

current (5, 6)

di/dt

1500

A/ms

Switching from VDRM £ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

1000

A/ms

Switching from VDRM £ 1000 V

Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

30

W

Average gate power dissipation

PG(AV)

5

W

Peak gate current

IGM

-

A

Gate current required to trigger all units

IGT

300

mA

VD = 10 V;IT=3A;Tj = +25 oC

Gate voltage required to trigger all units

VGT

3

V

VD = 10 V;IT=3A;Tj = +25 oC

Peak negative voltage

VRGM

5

V

Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

tgd

-

0.8

ms

VD=67% VDRM, IT=2000A, di/dt=60A/us, IFG=2A, tr=0.5us, Tj=25C

Turn-on time

tgt

-

1.5

Turn-off time (with VR = -5 V)

tq

-

50

ms

ITM=4000A, tp=2000us, di/dt=60A/us, Vr=100V, Vdr=67%VDRM, dVdr/dt=200V/us

Reverse recovery current

Irm

-

A

ITM=4000A, tp=2000us, di/dt=60A/us

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

oC

Storage temperature

Tstg

-40

+150

oC

Thermal resistance - junction to case

RQ (j-c)

-

-

K/kW

Double sided cooled

Single sided cooled

Thermal resistamce - case to sink

RQ (c-s)

-

-

K/kW

Double sided cooled *

Single sided cooled *

Thermal resistamce - junction to sink

RQ (c-s)

11

22

K/kW

Double sided cooled *

Single sided cooled *

Mounting force

F

27

47

-

kN

Weight

W

1.7

Kg

about

* Mounting surfaces smooth, flat and greased

Note : for case outline and dimensions, see case outline drawing in last page of this Technical Data



Fast thyristors 63H20

Sym

A

B

C

D

H

mm

109

73

98

3.5×3

35±1

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Product Categories : Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor

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