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KK2000A4000V phase control power thyristor 4000v

    Unit Price: USD 268 / Piece/Pieces
    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF
    Min. Order: 20 Piece/Pieces
    Delivery Time: 30 Days

Basic Info

Model No.: YZPST-KK2000A4000V

Type: Intrinsic Semiconductor

Additional Info

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity: 100

Brand: YZPST

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 500

Certificate: ISO9001-2008,ROHS

HS Code: 85413000

Port: Shanghai

Product Description

High Power Thyristor FOR PHASE CONTROL APPLICATIONS

YZPST-KK2000A4000V

Features:

. All Diffused Structure

. Interdigitated Amplifying Gate Configuration

. Guaranteed Maximum Turn-Off Time

. High dV/dt Capability

. Pressure Assembled Device

ELECTRICAL CHARACTERISTICS AND RATINGS

Blocking - Off State

Device Type

VRRM (1)

VDRM (1)

VRSM (1)

KK2000A

4000

4000

4100

VRRM = Repetitive peak reverse voltage

VDRM = Repetitive peak off state voltage

VRSM = Non repetitive peak reverse voltage (2)

Repetitive peak reverse

leakage and off state leakage

IRRM / IDRM

20 mA

200 mA (3)

Critical rate of voltage rise

dV/dt (4)

1000 V/msec

Conducting - on state


Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)

2000

A

Sinewave,180o conduction,Tc=70oC

RMS value of on-state current

ITRMS

3300

A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

ITSM

42000

39000

A

A

8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC

10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC

I square t

I2t

5.5x106

A2s

8.3 msec

Latching current

IL

1000

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

500

mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM

2.60

V

ITM = 2000 A; Tj = 125 oC

Critical rate of rise of on-state

current (5, 6)

di/dt

800

A/ms

Switching from VDRM £ 1000 V, non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

300

A/ms

Switching from VDRM £ 1000 V

Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

200

W

tp = 40 us

Average gate power dissipation

PG(AV)

5

W

Peak gate current

IGM

20

A

Gate current required to trigger all

units

IGT

300

200

125

mA

mA

mA

VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = +25 oC VD = 6 V;RL = 3 ohms;Tj = +125oC

Gate voltage required to trigger all

units

VGT

0.30

5

4

V

V V

VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = 0-125oC

VD = Rated VDRM; RL = 1000 ohms; Tj = + 125 oC

Peak negative voltage

VGRM

20

V

Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

td

2.0

ms

ITM = 50 A; VD = 67% VDRM

Gate pulse: VG = 30 V; RG = 10 ohms;

tr = 0.1 ms; tp = 20 ms

Turn-off time (with VR = -5 V)

tq

100

ms

ITM > 2000 A; di/dt = 25 A/ms;

VR ³ -5 V; Re-applied dV/dt = 400

V/ms linear to 67% VDRM ;

Tj = 125 oC; Duty cPSTCle ³ 0.01%

Reverse recovery current

Irr

200

A

ITM > 2000 A; di/dt = 25 A/ms; VR ³ -50 V; Tj = 125 oC

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

oC

Storage temperature

Tstg

-40

+150

oC

Thermal resistance - junction to

case

RQ (j-c)

0.012

o

C/W

Double sided cooled

Single sided cooled

Thermal resistamce - case to sink

RQ (c-s)

0.002

o

C/W

Double sided cooled *

Single sided cooled *

Mounting force

P

8000

35.5

10000

44.4

lb.

kN

Weight

W

3.5

1.60

Lb.

Kg.

* Mounting surfaces smooth, flat an Greased

Note : for case outline and dimensions, see case outline drawing in page 3 of this Technical Data

KK200A4000VTHYRISTOR (1)KK200A4000VTHYRISTOR (4)

A:

84

mm

B:

118

mm

C:

108

mm

E:

36

mm

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Product Categories : Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor

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  • KK2000A4000V phase control power thyristor 4000v
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