Unit Price: | USD 35 / Piece/Pieces |
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Payment Type: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Min. Order: | 20 Piece/Pieces |
Delivery Time: | 30 Days |
Model No.: YZPST-ST330S16
Type: Intrinsic Semiconductor
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging
Productivity: 100
Brand: YZPST
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 500
Certificate: ISO9001-2008,ROHS
HS Code: 85413000
Port: Shanghai
Phase Control Thyristors
YZPST-ST330S16
Features
● Center amplifying gate configuration
● Compression bonded encapsulation
● High dV/dt Capability
● Stud type, thread inch or metric
Typical Applications
● Medium power switching
● DC power supplies
Maximum Ratings And Characteristics
Symbol | Parameter | Values | Units | Test Conditions | |
ON-STATE |
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ITAV | Mean on-state current | 330 | A | Sinewave,180° conduction,Tc=75℃ | |
ITRMS | RMS value of on-state current | 520 | A | Nominal value | |
ITSM | Peak one cycle surge (non repetitive) current | 9000 | A
| 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC | |
I2t | I square t | 405 | KA2s | 8.3 msec and 10.0 msec | |
IL | Latching current | 1000 | mA | VD = 24 V; RL= 12 ohms | |
IH | Holding current | 600 | mA | VD = 24 V; I = 2.5 A | |
VTM | Peak on-state voltage | 1.51 | V | ITM = 1040 A; Duty cycle £ 0.01%
| |
di/dt | Critical rate of rise of on-state current | non-repetitive | 1000 | A/ms | Tj =100 oC V D= 1/2VDRM, ITM=(2x ITAV) A Gate pulse:tw≥20μs, tr≤0.5μs fG=50Hz IGM≥5 IGT |
repetitive | - | ||||
BLOCKING |
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VDRM VRRM | Repetitive peak off state voltage Repetitive peak reverse voltage | 1600 | V |
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VDSM VRSM | Non repetitive peak off state voltage Non repetitive peak reverse voltage | 1700 | V |
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IDRM IRRM | Repetitive peak off state current Repetitive peak reverse current | 50 | mA | Tj = 100 oC ,VRRM VDRM applied | |
dV/dt | Critical rate of voltage rise | 500 | V/ms | Tj = 100 oC VD =0.67 VDRM Gate open | |
TRIGGEING |
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PG(AV) | Average gate power dissipation | 2.0 | W |
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PGM | Peak gate power dissipation | 10 | W |
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IGM | Peak gate current | 3.0 | A |
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IGT | Gate trigger current | 200 | mA | TC = 25 oC | |
VGT | Gate trigger voltage | 3.0 | V | TC = 25 oC | |
VGD | Gate non-trigger voltage | 0.25 | V | Tj = 125 oC | |
SWITCHING |
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tq | Turn-off time | 100 | ms |
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Qrr | Reverse recovery charge | - |
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Thermal And Mechanical
Symbol | Parameter | Values | Units | Test Conditions |
Tj | Operating temperature | -40~125 | oC |
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Tstg | Storage temperature | -40~150 | oC |
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R th (j-c) | Thermal resistance - junction to case | 0.1 | K/W | DC operation ,Single sided cooled |
R th (c-s) | Thermal resistance - case to sink | 0.03 | K/W | Single sided cooled |
P | Mounting force | 48.5 | Nm |
|
W | Weight | 530 | g | about |
OUTLINE
Product Categories : Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor