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Home> Products> Semiconductor Disc Devices(Capsule Type)> Phase Control Thyristor> Thyristor control Pressure Assembled Device
Thyristor control Pressure Assembled Device
Thyristor control Pressure Assembled Device
Thyristor control Pressure Assembled Device

Thyristor control Pressure Assembled Device

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Product Attributes

Model No.YZPST-DCR1020SF65-1

BrandYZPST

Packaging & Delivery
Package Type : 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging
Product Description

  High Power Thyristor

YZPST-DCR1020SF65-1

application of thyristors dc motor thyristor control Pressure Assembled Device thyristorAll ratings are specified for Tj=25 oC unless  otherwise stated.

(1) All voltage ratings are specified for an applied  50Hz/60zHz sinusoidal waveform over the  temperature range  -40 to +125 oC.

(2) 10 msec. max. pulse width

(3) Maximum value for Tj = 125 oC.

(4) Minimum value for linear and exponential waveshape to 80% rated VDRM. Gate open. Tj = 125 oC.

(5) Non-repetitive value.

(6) The value of di/dt is established in accordance with EIA/NIMA Standard RS-397, Section 5-2-2-6. The value defined would be in addi-

     tion to that obtained from a snubber circuit,  comprising a 0.2 F capacitor and 20 ohms resistance in parallel with the thristor under test.

Features:   . All Diffused Structure  . Center Amplifying Gate Configuration       . Blocking capabilty up to 4200 volts

                 . Guaranteed Maximum Turn-Off Time  . High dV/dt Capability    . Pressure Assembled Device

 High Power Thyristor

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

 

IT(AV)

 

 

640

 

 

A

Sinewave,180o

conduction,T =60oC

c

RMS value of on-state current

ITRMS

 

1005

 

A

Nominal value

 

 

 

Peak one cPSTCle surge

(non repetitive) current

 

 

 

 

ITSM

 

 

-

 

8.5

 

 

KA KA

8.3 msec (60Hz), sinusoidal wave- shape, 180o  conduction, T = 125

j

oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180o  conduction, T = 125

j

oC

I square t

I2t

 

0.36x106

 

A2s

8.3 msec and 10.0 msec

Latching current

IL

 

600

 

mA

VD  = 24 V; RL= 12 ohms

Holding current

IH

 

200

 

mA

VD = 24 V; I = 2.5 A

 

Peak on-state voltage

 

VTM

 

 

3.6

 

 

V

ITM  = 1800 A; Duty cPSTCle

0.01%; T = 25 oC

j

Critical rate of rise of on-state current (5, 6)

 

di/dt

 

 

-

 

 

A/  s

Switching from VDRM     1000 V, non-repetitive

Critical rate of rise of on-state current (6)

 

di/dt

 

 

100

 

 

A/  s

 

Switching from VDRM     1000 V

ELECTRICAL  CHARACTERISTICS AND RATINGS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

 

150

 

W

tp = 40 us

 

Average gate power dissipation

 

PG(AV)

 

 

5

 

 

W

 

Peak gate current

IGM

 

-

 

A

 

 

Gate current required to trigger all units

 

IGT

 

-

300

-

 

mA mA mA

V   = 6 V;R  = 3 ohms;T  = -40 oC

D                        L                                    j

V   = 6 V;R  = 3 ohms;T  = +25 oC

D                        L                                    j

V   = 6 V;R  = 3 ohms;T  = +125oC

D                        L                                    j

Gate voltage required to trigger all units

 

 

V

 

-

3.0

-

 

 

V V V

V   = 6 V;R  = 3 ohms;T  = -40 oC

D                        L                                    j

V   = 6 V;R  = 3 ohms;T  = 0-125oC

D                        L                                    j

VD  = Rated VDRM; RL = 1000 ohms;

T = + 125 oC

j

 

Peak negative voltage

 

VGRM

 

 

5

 

 

V

 


Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

 

150

 

W

tp = 40 us

 

Average gate power dissipation

 

PG(AV)

 

 

5

 

 

W

 

Peak gate current

IGM

 

-

 

A

 

 

Gate current required to trigger all units

 

IGT

 

-

300

-

 

mA mA mA

V   = 6 V;R  = 3 ohms;T  = -40 oC

D                        L                                    j

V   = 6 V;R  = 3 ohms;T  = +25 oC

D                        L                                    j

V   = 6 V;R  = 3 ohms;T  = +125oC

D                        L                                    j

Gate voltage required to trigger all units

 

 

V

 

-

3.0

-

 

 

V V V

V   = 6 V;R  = 3 ohms;T  = -40 oC

D                        L                                    j

V   = 6 V;R  = 3 ohms;T  = 0-125oC

D                        L                                    j

VD  = Rated VDRM; RL = 1000 ohms;

T = + 125 oC

j

 

Peak negative voltage

 

VGRM

 

 

5

 

 

V

 

Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

 

Delay time

 

td

 

 

-

 

0.5

 

s

ITM  = 50 A; VD = Rated VDRM Gate pulse: VG = 20 V; RG  = 20 ohms; tr = 0.1   s; tp = 20   s

 

Turn-off time (with VR  = -50 V)

 

tq

 

 

-

 

600

 

s

ITM  = 1000 A; di/dt = 25 A/  s;

VR        -50 V; Re-applied dV/dt = 20

V/  s linear to 80% VDRM; VG = 0;

T = 125 oC; Duty cPSTCle

j

0.01%

 

Reverse recovery charge

 

Qrr

 

 

*

 

 

C

ITM  = 1000 A; di/dt = 25 A/  s; VR        -50 V

* For guaranteed max. value, contact factory.

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS                                                    

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

 

oC

 

 

Storage temperature

 

Tstg

 

-40

 

+125

 

 

oC

 

 

Thermal resistance - junction to case

 

R  (j-c)

 

0.022

0.052

 

o

C/W

Double sided cooled

Single sided cooled

 

Thermal resistamce - case to sink

 

R  (c-s)

 

0.004

0.008

 

o

C/W

Double sided cooled * Single sided cooled *

 

Thermal resistamce - junction to sink

 

R  (j-s)

 

-

-

 

o

C/W

Double sided cooled * Single sided cooled *

Mounting force

P

18

22

 

kN

 

Weight

W

 

 

-

g

 

* Mounting surfaces smooth, flat and greased

CASE OUTLINE AND DIMENSIONS

 High Power Thyristor

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