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YANGZHOU POSITIONING TECH CO., LTD. [Jiangsu,China] Business Type: Trade Company , Distributor/Wholesaler , Manufacturer , Service Main Mark: Africa , Americas , Asia , Europe Exporter: 91% - 100% Description: KK Thyristor,2000V Inverter Thyristor,2000A Power Thyristor

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Home > Products > Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor > KK2000A2000V power inverter thyristor

KK2000A2000V power inverter thyristor

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Incoterm:	FOB,CFR,CIF
Delivery Time:	30 Days

 KK2000A2000V power inverter thyristor

Basic Info

Model No.: YZPST-KK2000A2000V

Additional Info

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity: 100

Brand: YZPST

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 1000

Certificate: ISO9000

HS Code: 85413000

Port: SHANGHAI

Product Description

High Power Thyristor FOR PHASE CONTROL

YZPST-KK2000A2000V

Features:

. All Diffused Structure

. Center Amplifying Gate Configuration

. Guaranteed Maximum Turn-Off Time

. High dV/dt Capability

. Pressure Assembled Device

Notes:

All ratings are specified for Tj=25 oC unless

otherwise stated.

(1) All voltage ratings are specified for an applied

50Hz/60zHz sinusoidal waveform over the

temperature range -40 to +125 oC.

(2) 10 msec. max. pulse width

(3) Maximum value for Tj = 125 oC.

(4) Minimum value for linear and exponential

waveshape to 80% rated VDRM. Gate open.

Tj = 125 oC.

(5) Non-repetitive value.

(6) The value of di/dt is established in accordance

with EIA/NIMA Standard RS-397, Section

5-2-2-6. The value defined would be in addi-

tion to that obtained from a snubber circuit,

comprising a 0.2 F capacitor and 20 ohms

resistance in parallel with the thristor under

test.

ELECTRICAL CHARACTERISTICS AND RATINGS

Blocking - Off State

VRRM (1)	VDRM (1)	VRSM (1)
2000	2000	2100

V_RRM = Repetitive peak reverse voltage

V_DRM = Repetitive peak off state voltage

V_RSM = Non repetitive peak reverse voltage (2)

Repetitive peak reverse leakage and off state leakage

I_{RRM /}I_DRM

15 mA

65 mA (3)

Critical rate of voltage rise

dV/dt (4)

500 V/msec

Conducting - on state

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Average value of on-state current	I_T(AV)M		2000		A	Sinewave,180^o conduction,T_c=55^oC
RMS value of on-state current	I_TRMSM		3140		A	Nominal value
Peak one cycle surge (non repetitive) current	I_TSM		- 14.6		KA KA	8.3 msec (60Hz), sinusoidal wave- shape, 180^o conduction, T_j = 125 ^oC 10.0 msec (50Hz), sinusoidal wave- shape, 180^o conduction, T_j = 125 ^oC
I square t	I²t		1.06x10⁶		A²s	8.3 msec and 10.0 msec
Latching current	I_L		1000		mA	V_D = 24 V; R_L= 12 ohms
Holding current	I_H		500		mA	V_{D =} 24 V; I =2.5 A
Peak on-state voltage	V_TM		2.6		V	I_TM = 4000 A; Duty Cycle £ 0.01%; T_j =25 ^oC
Threshold vlotage	V_T₀		-		V
Slope resistance	r_T		-		mΩ
Critical rate of rise of on-state current (5, 6)	di/dt		800		A/ms	Switching from V_DRM £ 1000 V, non-repetitive
Critical rate of rise of on-state current (6)	di/dt		400		A/ms	Switching from V_DRM £ 1000 V

ELECTRICAL CHARACTERISTICS AND RATINGS

Gating

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Peak gate power dissipation	P_GM		200		W	t_p= 40 us
Average gate power dissipation	P_G(AV)		5		W
Peak gate current	I_GM		10		A
Gate current required to trigger all units	I_GT		- 150 -		mA mA mA	V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC V_D = 6 V;R_L = 3 ohms;T_j = +25 ^oC V_D = 6 V;R_L = 3 ohms;T_j = +125^oC
Gate voltage required to trigger all units	V_GT		- 3 -		V V V	V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC V_D = 6 V;R_L = 3 ohms;T_j = 0-125^oC V_D = Rated V_DRM; R_L = 1000 ohms; T_j = + 125 ^oC
Peak negative voltage	V_GRM		5		V

Dynamic

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Delay time	t_d		1.5	0.7	ms	I_TM =50 A; V_D = Rated V_DRM Gate pulse: V_G = 20 V; R_G = 20 ohms; t_r = 0.1 ms; t_p = 20 ms
Turn-off time (with V_R = -50 V)	t_q		35		ms	I_TM =1000 A; di/dt =25 A/ms; V_R ³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% V_DRM; V_G = 0; T_j = 125 ^oC; Duty cPSTCle ³ 0.01%
Reverse recovery charge	Q_rr		*	400	mC	I_TM =1000 A; di/dt =25 A/ms; V_R ³ -50 V

* For guaranteed max. value, contact factory.

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Operating temperature	T_j	-40	+125		^oC
Storage temperature	T_stg	-40	+150		^oC
Thermal resistance - junction to case	R_Q_(j-c)		23 45		^oC/KW	Double sided cooled Single sided cooled
Thermal resistamce - case to sink	R_Q_(c-s)		10 20		^oC/KW	Double sided cooled * Single sided cooled *
Mounting force	P	24.5	26.7		kN
Weight	W			460	g	About

* Mounting surfaces smooth, flat and greased

CASE OUTLINE AND DIMENSIONS

C458PB thyristor

Sym

A

B

C

D

H

mm

75

47

66

3.5×3

26±1

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Product Categories : Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor