Communicate with Supplier? Supplier
John chang Mr. John chang
What can I do for you?
Chat Now Contact Supplier

YANGZHOU POSITIONING TECH CO., LTD.

Products

Home > Products > Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor > Pressure Assembled Device High Power thyristor 4500V

Pressure Assembled Device High Power thyristor 4500V
Pressure Assembled Device High Power thyristor 4500V
Pressure Assembled Device High Power thyristor 4500V
Pressure Assembled Device High Power thyristor 4500V

Pressure Assembled Device High Power thyristor 4500V

Unit Price: USD 310 - 410 / Piece/Pieces
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Min. Order: 1 Piece/Pieces
Delivery Time: 30 Days

Basic Info

    Model No.: YZPST-R3708FC45V

    VRRM: 4500V

    VDRM: 4500V

    VRSM: 4600V

    IRRM / IDRM: 200mA

    DV/dt: 200 V/μsec

Additional Info

    Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

    Productivity: 100

    Brand: YZPST

    Transportation: Ocean,Air

    Place of Origin: China

    Supply Ability: 1000

    Certificate: ISO9000

    HS Code: 85413000

    Port: SHANGHAI

Product Description

High Power Thyristor FOR PHASE CONTROL APPLICATIONS

YZPST-R3708FC45V

Features:

. All Diffused Structure

. Linear Amplifying Gate Configuration

. Blocking capabilty up to 4500 volts

. Guaranteed Maximum Turn-Off Time

. High dV/dt Capability

. Pressure Assembled Device

Blocking - Off State



Device Type

VRRM (1)

VDRM (1)

VRSM (1)

R3708FC45

4500

4500

4600


VRRM = Repetitive peak reverse voltage


VDRM


= Repetitive peak off state voltage

VRSM = Non repetitive peak reverse voltage (2)

Repetitive peak reverse leakage and off state leakage

IRRM / IDRM

200 mA (3)

Critical rate of voltage rise

dV/dt (4)

200 Vsec

Conducting - on state


waveshape to 80% rated VDRM. Gate open. Tj = 125 oC.

(5) Non-repetitive value.

(6) The value of di/dt is established in accordance with EIA/NIMA Standard RS-397, Section

5-2-2-6. The value defined would be in addi- tion to that obtained from a snubber circuit, comprising a 0.2 μF capacitor and 20 ohms resistance in parallel with the thristor under test.


Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)

3708

A

Sinewave,180o conduction,TS=55oC

RMS value of on-state current

ITRMS

7364

A

TS=25oC

Peak one cpstcle surge

(non repetitive) current

ITSM

50000

A

10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC

I square t

I2t

12.5x106

A2s

10.0 msec

Latching current

IL

1000

mA

VD = 12 V; RL= 12 ohms

Holding current

IH

450

mA

VD = 12 V; I = 2.5 A

Peak on-state voltage

VTM

2.1

V

ITM = 4000 A; Duty cpstcle 0.01% Tj = 125 oC

Critical rate of rise of on-state current (5, 6)

di/dt

250

A/μs

Switching from VDRM 1000 V, non-repetitive

Critical rate of rise of on-state current (6)

di/dt

100

A/μs

Switching from VDRM 1000 V

ELECTRICAL CHARACTERISTICS AND RATINGS R3708FC45 - Power Thyristor

Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

200

W

tp = 40 us

Average gate power dissipation

PG(AV)

5

W

Peak gate current

IGM

15

A

Gate current required to trigger all units

IGT

30

300

200

125

mA mA mA

VD = 12V;RL = 6 ohms;Tj = -40 oC VD = 12V;RL = 6 ohms;Tj = +25 oC VD = 12V;RL = 6 ohms;Tj = +125oC

Gate voltage required to trigger all units

VGT

0.30

5

3

V V V

VD = 12 V;RL = 6 ohms;Tj = -40 oC VD = 12V;RL = 6 ohms;Tj = 0-125oC VD = Rated VDRM; RL = 1000 ohms; Tj = + 125 oC

Peak negative voltage

VGRM

15

V

Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

td

2.5

μs

ITM = 50 A; VD = 1500 V

Gate pulse: VG = 20 V; RG = 20 ohms;

tr = 0.1 μs; tp = 20 μs

Turn-off time (with VR = -50 V)

tq

250

μs

ITM =4000 A; di/dt = 60 As;

VR =100 V; Re-applied dV/dt = 20

V/μs linear to 67% VDRM; VG = 0; Tj = 125 oC; Tp=2000us

Reverse recovery current

Irr

A

ITM =4000 A; di/dt = 60 As; VR =100 V


THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

oC

Storage temperature

Tstg

-40

+140

oC

Thermal resistance - junction to sink

RΘ (j-s)

0.0075

0.0150

o

C/W

Double sided cooled

Single sided cooled

Mounting force

P

98

113

kN

Weight

W

2.7

Kg.

* Mounting surfaces smooth, flat and greased

C458pb Thyristor

Sym

A

B

C

E

Inches

3.9 3

5.90

5.15

1.37

mm

100

150

131

35±1.0



Looking for ideal Power Thyristor 4500V Manufacturer & supplier ? We have a wide selection at great prices to help you get creative. All the High Power Thyristor 4500V are quality guaranteed. We are China Origin Factory of Pressure Assembled Thyristor. If you have any question, please feel free to contact us.

Product Categories : Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor

Send Inquiry

John chang

Mr. John chang

Tel:86-514-87782298

Fax:86-514-87782297

Mobile Phone:+8613805278321Contact me with Whatsapp

Email:info@yzpst.com

Address: 3rd Floor, Weiheng Building No.20 B Area, Yangzhou, Jiangsu

苏ICP备05018286号-1