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Home> Products> Semiconductor Disc Devices(Capsule Type)> Phase Control Thyristor> Pressure Assembled Device High Power thyristor 4500V
Pressure Assembled Device High Power thyristor 4500V
Pressure Assembled Device High Power thyristor 4500V
Pressure Assembled Device High Power thyristor 4500V
Pressure Assembled Device High Power thyristor 4500V
Pressure Assembled Device High Power thyristor 4500V
Pressure Assembled Device High Power thyristor 4500V

Pressure Assembled Device High Power thyristor 4500V

$4101-9 Piece/Pieces

$310≥10Piece/Pieces

Payment Type:L/C,T/T,Paypal
Incoterm:FOB,CFR,CIF
Min. Order:1 Piece/Pieces
Transportation:Ocean,Air
Port:SHANGHAI
Product Attributes

Model No.YZPST-R3708FC45V

BrandYZPST

VRRM4500V

VDRM4500V

VRSM4600V

IRRM / IDRM200mA

DV/dt200 V/μsec

Packaging & Delivery
Selling Units : Piece/Pieces
Package Type : 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging
私域R3708FC45V 截取视频15秒1-1.88MB.mp4
Product Description

High Power Thyristor FOR PHASE CONTROL APPLICATIONS

YZPST-R3708FC45V

Features:

. All Diffused Structure

. Linear Amplifying Gate Configuration

. Blocking capabilty up to 4500 volts

. Guaranteed Maximum Turn-Off Time

. High dV/dt Capability

. Pressure Assembled Device

Blocking - Off State



Device Type

VRRM (1)

VDRM (1)

VRSM (1)

R3708FC45

4500

4500

4600


VRRM = Repetitive peak reverse voltage


VDRM


= Repetitive peak off state voltage

VRSM = Non repetitive peak reverse voltage (2)

Repetitive peak reverse leakage and off state leakage

IRRM / IDRM

200 mA (3)

Critical rate of voltage rise

dV/dt (4)

200 Vsec

Conducting - on state


waveshape to 80% rated VDRM. Gate open. Tj = 125 oC.

(5) Non-repetitive value.

(6) The value of di/dt is established in accordance with EIA/NIMA Standard RS-397, Section

5-2-2-6. The value defined would be in addi- tion to that obtained from a snubber circuit, comprising a 0.2 μF capacitor and 20 ohms resistance in parallel with the thristor under test.


Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)

 

3708

 

A

Sinewave,180o conduction,TS=55oC

RMS value of on-state current

ITRMS

 

7364

 

A

TS=25oC

Peak one cpstcle surge

(non repetitive) current

 

ITSM

 

50000

 

A

10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC

I square t

I2t

 

12.5x106

 

A2s

10.0 msec

Latching current

IL

 

 

1000

 

mA

VD = 12 V; RL= 12 ohms

Holding current

IH

 

 

450

 

mA

VD = 12 V; I = 2.5 A

Peak on-state voltage

VTM

 

 

2.1

 

V

ITM = 4000 A; Duty cpstcle 0.01% Tj = 125 oC

Critical rate of rise of on-state current (5, 6)

di/dt

 

 

250

 

A/μs

Switching from VDRM 1000 V, non-repetitive

Critical rate of rise of on-state current (6)

di/dt

 

 

100

 

A/μs

Switching from VDRM 1000 V

ELECTRICAL CHARACTERISTICS AND RATINGS           R3708FC45 - Power    Thyristor

Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

 

200

 

W

tp = 40 us

Average gate power dissipation

PG(AV)

 

5

 

W

 

Peak gate current

IGM

 

15

 

A

 

Gate current required to trigger all units

IGT

 

30

300

200

125

 

mA mA mA

VD = 12V;RL = 6 ohms;Tj = -40 oC VD = 12V;RL = 6 ohms;Tj = +25 oC VD = 12V;RL = 6 ohms;Tj = +125oC

Gate voltage required to trigger all units

VGT

 

0.30

5

3

 

V V V

VD = 12 V;RL = 6 ohms;Tj = -40 oC VD = 12V;RL = 6 ohms;Tj = 0-125oC VD = Rated VDRM; RL = 1000 ohms; Tj = + 125 oC

Peak negative voltage

VGRM

 

15

 

V

 

Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

td

 

 

2.5

μs

ITM = 50 A; VD = 1500 V

Gate pulse: VG = 20 V; RG = 20 ohms;

tr = 0.1 μs; tp = 20 μs

Turn-off time (with VR = -50 V)

tq

 

 

250

μs

ITM =4000 A; di/dt = 60 As;

VR =100 V; Re-applied dV/dt = 20

V/μs linear to 67% VDRM; VG = 0; Tj = 125 oC; Tp=2000us

Reverse recovery current

Irr

 

 

 

A

ITM =4000 A; di/dt = 60 As; VR =100 V


THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS                                           

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

 

oC

 

Storage temperature

Tstg

-40

+140

 

oC

 

Thermal resistance - junction to sink

RΘ (j-s)

 

0.0075

0.0150

 

o

C/W

Double sided cooled

Single sided cooled

Mounting force

P

98

113

 

kN

 

Weight

W

 

 

2.7

Kg.

 

* Mounting surfaces smooth, flat and greased

C458pb Thyristor

Sym

A

B

C

E

Inches

3.9 3

5.90

5.15

1.37

mm

100

150

131

35±1.0



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