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Pressure Assembled Device High Power thyristor 4500V

    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF
    Delivery Time: 30 Days

Basic Info

Model No.: YZPST-R3708FC45

Additional Info

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity: 100

Brand: YZPST

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 1000

Certificate: ISO9000

HS Code: 85413000

Port: SHANGHAI

Product Description

High Power Thyristor FOR PHASE CONTROL APPLICATIONS

YZPST-R3708FC45

Features:

. All Diffused Structure

. Linear Amplifying Gate Configuration

. Blocking capabilty up to 4500 volts

. Guaranteed Maximum Turn-Off Time

. High dV/dt Capability

. Pressure Assembled Device

Blocking - Off State


Device Type

VRRM (1)

VDRM (1)

VRSM (1)

R3708FC45

4500

4500

4600


VRRM = Repetitive peak reverse voltage

VDRM

= Repetitive peak off state voltage

VRSM = Non repetitive peak reverse voltage (2)

Repetitive peak reverse leakage and off state leakage

IRRM / IDRM

200 mA (3)

Critical rate of voltage rise

dV/dt (4)

200 Vsec

Conducting - on state


waveshape to 80% rated VDRM. Gate open. Tj = 125 oC.

(5) Non-repetitive value.

(6) The value of di/dt is established in accordance with EIA/NIMA Standard RS-397, Section

5-2-2-6. The value defined would be in addi- tion to that obtained from a snubber circuit, comprising a 0.2 μF capacitor and 20 ohms resistance in parallel with the thristor under test.


Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)

3708

A

Sinewave,180o conduction,TS=55oC

RMS value of on-state current

ITRMS

7364

A

TS=25oC

Peak one cpstcle surge

(non repetitive) current

ITSM

50000

A

10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC

I square t

I2t

12.5x106

A2s

10.0 msec

Latching current

IL

1000

mA

VD = 12 V; RL= 12 ohms

Holding current

IH

450

mA

VD = 12 V; I = 2.5 A

Peak on-state voltage

VTM

2.1

V

ITM = 4000 A; Duty cpstcle 0.01% Tj = 125 oC

Critical rate of rise of on-state current (5, 6)

di/dt

250

A/μs

Switching from VDRM 1000 V, non-repetitive

Critical rate of rise of on-state current (6)

di/dt

100

A/μs

Switching from VDRM 1000 V

ELECTRICAL CHARACTERISTICS AND RATINGS R3708FC45 - Power Thyristor

Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

200

W

tp = 40 us

Average gate power dissipation

PG(AV)

5

W

Peak gate current

IGM

15

A

Gate current required to trigger all units

IGT

30

300

200

125

mA mA mA

VD = 12V;RL = 6 ohms;Tj = -40 oC VD = 12V;RL = 6 ohms;Tj = +25 oC VD = 12V;RL = 6 ohms;Tj = +125oC

Gate voltage required to trigger all units

VGT

0.30

5

3

V V V

VD = 12 V;RL = 6 ohms;Tj = -40 oC VD = 12V;RL = 6 ohms;Tj = 0-125oC VD = Rated VDRM; RL = 1000 ohms; Tj = + 125 oC

Peak negative voltage

VGRM

15

V

Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

td

2.5

μs

ITM = 50 A; VD = 1500 V

Gate pulse: VG = 20 V; RG = 20 ohms;

tr = 0.1 μs; tp = 20 μs

Turn-off time (with VR = -50 V)

tq

250

μs

ITM =4000 A; di/dt = 60 As;

VR =100 V; Re-applied dV/dt = 20

V/μs linear to 67% VDRM; VG = 0; Tj = 125 oC; Tp=2000us

Reverse recovery current

Irr

A

ITM =4000 A; di/dt = 60 As; VR =100 V


THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

oC

Storage temperature

Tstg

-40

+140

oC

Thermal resistance - junction to sink

RΘ (j-s)

0.0075

0.0150

o

C/W

Double sided cooled

Single sided cooled

Mounting force

P

98

113

kN

Weight

W

2.7

Kg.

* Mounting surfaces smooth, flat and greased

C458pb Thyristor

Sym

A

B

C

E

Inches

3.9 3

5.90

5.15

1.37

mm

100

150

131

35±1.0


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Product Categories : Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor

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