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Home > Products > Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor > 2800V High power thyristor for power converter

2800V High power thyristor for power converter
2800V High power thyristor for power converter

2800V High power thyristor for power converter

Unit Price: USD 105 - 155 / Bag/Bags
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Min. Order: 1 Bag/Bags
Delivery Time: 30 Days

Basic Info

    Model No.: YZPST-5STP24L2800

    IT(AV)M: 2400A

    ITRMSM: 4120A

    VTM: 1.35V

    VT0: 0.85V

Additional Info

    Brand: YZPST

    Transportation: Ocean,Air

    Place of Origin: CHINA

    Certificate: ISO9000

    Port: SHANGHAI

Product Description

High Power Thyristor Phase Control

YZPST-5STP24L2800

HIGH Power Thyristor FOR PHASE CONTROL FEATURES AND APPLICATIONS

Features:

. All Diffused Structure

. Interdigitated Amplifying Gate Configuration

. Guaranteed Maximum Turn-Off Time

. High dV/dt Capability

. Pressure Assembled Device


YZPST-5STP24L2800-1

Conducting - on state

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)M

2400

A

Sinewave,180o

conduction,T =85oC

c

RMS value of on-state current

ITRMSM

4120

A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

ITSM

46

43

kA

kA

8.3 msec (60Hz), sinusoidal wave-

shape, 180o conduction, T = 125

j

oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, T = 125

j

oC

I square t

I2t

8.7x106

A2s

8.3 msec

Latching current

IL

200

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

75

mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM

1.35

V

I = 3000 A; T = 125 oC

TM j

Threshold vlotage

VT0

0.85

V

Slope resistance

rT

0.16

m

Critical rate of rise of on-state current (5, 6)

di/dt

300

A/ s

Switching from VDRM 1000 V, non-repetitive

Critical rate of rise of on-state current (6)

di/dt

150

A/ s

Switching from VDRM 1000 V

Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

-

W

Average gate power dissipation

PG(AV)

-

W

Peak gate current

IGM

-

A

Gate current required to trigger all units

IGT

400

mA

V = 10 V;I =3A;T = +25 oC

D T j

Gate voltage required to trigger all units

VGT

2.6

V

V = 10 V;I =3A;T = +25 oC

D T j

Peak negative voltage

VRGM

-

V


Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

tgd

3

-

s

VD=67% VDRM, IT=2000A, di/dt=60A/us, IFG=2A, tr=0.5us, Tj=25C

Turn-on time

tgt

-

-

Turn-off time (with VR = -5 V)

tq

-

-

400

s

ITM=1000A, tp=1000us, di/dt=60A/us, Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/us

Reverse recovery current

Irm

-

A

ITM=4000A, tp=2000us, di/dt=60A/us

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

oC

Storage temperature

Tstg

-40

+140

oC

Thermal resistance - junction to

case

R (j-c)

10

20

K/kW

Double sided cooled *

Single sided cooled *

Thermal resistamce - case to sink

R (c-s)

2

4

K/kW

Double sided cooled * Single sided cooled *

Thermal resistance - junction to case

R (j-s)

-

-

K/kW

Double sided cooled * Single sided cooled *

Mounting force

F

45

60

50

kN

Weight

W

0.9

Kg

about

* Mounting surfaces smooth, flat and greased

Note : for case outline and dimensions, see case outline drawing in last page of this Technical Data

Outline

YZPST-5STP24L2800-2


Looking for ideal Thyristor for Power Converter Manufacturer & supplier ? We have a wide selection at great prices to help you get creative. All the 2800V Thyristor for Power Converter are quality guaranteed. We are China Origin Factory of 2800V High Power Thyristor. If you have any question, please feel free to contact us.

Product Categories : Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor

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John chang

Mr. John chang

Tel:86-514-87782298

Fax:86-514-87782297

Mobile Phone:+8613805278321Contact me with Whatsapp

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