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Home> Products> Semiconductor Disc Devices(Capsule Type)> Phase Control Thyristor> High power thyristor for phase control applications 1600V
High power thyristor for phase control applications 1600V
High power thyristor for phase control applications 1600V
High power thyristor for phase control applications 1600V
High power thyristor for phase control applications 1600V
High power thyristor for phase control applications 1600V

High power thyristor for phase control applications 1600V

$3501-9 Piece/Pieces

$250≥10Piece/Pieces

Payment Type:L/C,T/T,Paypal
Incoterm:FOB,CFR,CIF
Transportation:Ocean,Air
Port:SHANGHAI
Product Attributes

Model No.YZPST-KP4350A1600V

BrandYZPST

VRRM1600V

VDRM1600V

I RRM /I DRM450A

I T(AV)4350A

Packaging & Delivery
Selling Units : Piece/Pieces
Package Type : 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging
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Phase Control Thyristor YZPST-KP4350A1600V
私域KP4350A1600V 截取视频15秒 (1)-3.75MB.mp4
Product Description


High Power Thyristor for phase control applications

 YZPST-KP4350A1600V


Features: 

. All Diffused Structure

. Linear Amplifying Gate Configuration                           

. Blocking capabilty up to 1600 volts

. Guaranteed Maximum Turn-Off Time

. High dV/dt Capability

. Pressure Assembled Device

 

ELECTRICAL CHARACTERISTICS AND RATINGS

 

Blocking - Off State

Device Type

VRRM (1)

VDRM (1)

VRSM (1)

KP4350A

  1600

  1600

  1700

VRRM = Repetitive peak reverse voltage

VDRM = Repetitive peak off state voltage

VRSM = Non repetitive peak reverse voltage (2)

Repetitive peak reverse leakage and off state leakage

IRRM / IDRM

 

 

450 mA (3)

Critical rate of voltage rise

dV/dt (4)

300 V/msec

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)

 

  4350

 

A

Sinewave,180o conduction,TS=70oC

Peak one cpstcle surge

(non repetitive) current

 

ITSM

 

48900

  

 

A

 

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t

 

11.9x106

 

A2s

10.0 msec

Latching current

IL

 

     1000

 

mA

VD = 12 V; RL= 12 ohms

Holding current

IH

 

     450

 

mA

VD = 12 V; I = 2.5 A

Peak on-state voltage

VTM

 

     1.5

 

V

ITM = 6000 A; Duty cpstcle £ 0.01%

Tj = 25 oC

Critical rate of rise of on-state

current (5)

di/dt

 

      200

 

A/ms

Switching from VDRM £ 1000 V,

non-repetitive

Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

 

200

 

W

tp = 40 us

Average gate power dissipation

PG(AV)

 

5

 

W

 

Peak gate current

IGM

 

15

 

A

 

Gate current required to trigger all units

IGT

 

30

300

200

125

 

mA

mA

mA

VD = 12 V;RL = 6 ohms;Tj = -40 oC

VD = 12 V;RL = 6 ohms;Tj = +25 oC

VD = 12 V;RL = 6 ohms;Tj = +125oC

Gate voltage required to trigger all units

 

 

VGT

 

 

0.30

5

3

 

 

V

V

V

VD = 12 V;RL = 6 ohms;Tj = -40 oC

VD = 12 V;RL = 6 ohms;Tj = 0-125oC

VD = Rated VDRM; RL = 1000 ohms;

Tj = + 125 oC

Peak negative voltage

VGRM

 

15

 

V



CASE OUTLINE AND DIMENSIONS.

High power thyristor for phase control applications 1600V



Home> Products> Semiconductor Disc Devices(Capsule Type)> Phase Control Thyristor> High power thyristor for phase control applications 1600V
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