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Home > Products > Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor > High power thyristor for phase control applications 1600V

High power thyristor for phase control applications 1600V
High power thyristor for phase control applications 1600V
High power thyristor for phase control applications 1600V

High power thyristor for phase control applications 1600V

Unit Price: USD 250 - 350 / Piece/Pieces
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Min. Order: 1 Piece/Pieces
Delivery Time: 30 Days
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Basic Info

    Model No.: YZPST-KP4350A1600V

    VRRM: 1600V

    VDRM: 1600V

    I RRM /I DRM: 450A

    I T(AV): 4350A

    IL: 1000mA

Additional Info

    Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

    Productivity: 100

    Brand: YZPST

    Transportation: Ocean,Air

    Place of Origin: China

    Supply Ability: 1000

    Certificate: ISO9000

    HS Code: 85413000

    Port: SHANGHAI

Product Description


High Power Thyristor for phase control applications

YZPST-KP4350A1600V


Features:

. All Diffused Structure

. Linear Amplifying Gate Configuration

. Blocking capabilty up to 1600 volts

. Guaranteed Maximum Turn-Off Time

. High dV/dt Capability

. Pressure Assembled Device

ELECTRICAL CHARACTERISTICS AND RATINGS

Blocking - Off State

Device Type

VRRM (1)

VDRM (1)

VRSM (1)

KP4350A

1600

1600

1700

VRRM = Repetitive peak reverse voltage

VDRM = Repetitive peak off state voltage

VRSM = Non repetitive peak reverse voltage (2)

Repetitive peak reverse leakage and off state leakage

IRRM / IDRM

450 mA (3)

Critical rate of voltage rise

dV/dt (4)

300 V/msec

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)

4350

A

Sinewave,180o conduction,TS=70oC

Peak one cpstcle surge

(non repetitive) current

ITSM

48900

A

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t

11.9x106

A2s

10.0 msec

Latching current

IL

1000

mA

VD = 12 V; RL= 12 ohms

Holding current

IH

450

mA

VD = 12 V; I = 2.5 A

Peak on-state voltage

VTM

1.5

V

ITM = 6000 A; Duty cpstcle £ 0.01%

Tj = 25 oC

Critical rate of rise of on-state

current (5)

di/dt

200

A/ms

Switching from VDRM £ 1000 V,

non-repetitive

Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

200

W

tp = 40 us

Average gate power dissipation

PG(AV)

5

W

Peak gate current

IGM

15

A

Gate current required to trigger all units

IGT

30

300

200

125

mA

mA

mA

VD = 12 V;RL = 6 ohms;Tj = -40 oC

VD = 12 V;RL = 6 ohms;Tj = +25 oC

VD = 12 V;RL = 6 ohms;Tj = +125oC

Gate voltage required to trigger all units

VGT

0.30

5

3

V

V

V

VD = 12 V;RL = 6 ohms;Tj = -40 oC

VD = 12 V;RL = 6 ohms;Tj = 0-125oC

VD = Rated VDRM; RL = 1000 ohms;

Tj = + 125 oC

Peak negative voltage

VGRM

15

V



CASE OUTLINE AND DIMENSIONS.

YZPST-KP4350A1600V



Looking for ideal 1600V High Power Thyristor Manufacturer & supplier ? We have a wide selection at great prices to help you get creative. All the Thyristor for Phase Control Application are quality guaranteed. We are China Origin Factory of Power Thyristor 1600V. If you have any question, please feel free to contact us.

Product Categories : Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor

Send Inquiry

John chang

Mr. John chang

Tel:86-514-87782298

Fax:86-514-87782297

Mobile Phone:+8613805278321Contact me with Whatsapp

Email:info@yzpst.com

Address: 3rd Floor, Weiheng Building No.20 B Area, Yangzhou, Jiangsu

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