25TTS08 800V silicon controlled rectifiers Phase control scr
$0.42000-99999 Piece/Pieces
$0.3≥100000Piece/Pieces
Payment Type: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Min. Order: | 2000 Piece/Pieces |
Transportation: | Ocean,Air |
Port: | SHANGHAI |
$0.42000-99999 Piece/Pieces
$0.3≥100000Piece/Pieces
Payment Type: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Min. Order: | 2000 Piece/Pieces |
Transportation: | Ocean,Air |
Port: | SHANGHAI |
Model No.: YZPST-25TTS08
Brand: YZPST
Selling Units | : | Piece/Pieces |
Package Type | : | 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging |
PHASE CONTROL SCR
YZPST-25TTS08
Description / Features
The 25TTS08 of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 oC junction temperature.
Typical applications are in input rectification (softstart) and these products are designed to be used with International Rectifier input diodes, switches and output rectifiers which are available in identical package outlines.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC)
Parameter |
Symbol |
Typ |
Unit |
Repetitive peak off-state voltages | VDRM VRRM |
800 |
V |
Average on-state current | IT(AV) | 16 | A |
RMS on-state current | IT(RMS) | 25 | A |
Non-repetitive peak on-state current |
ITSM |
300 |
A |
Max. Operating Junction Temperature |
Tj |
110 |
oC |
Storage Temperature | Tstg | -45~150 | oC |
ELECTRICAL CHARACTERISTICS ( Ta = 25 OC)
Parameter |
Symbol |
Test Conditions |
Min |
Typ |
Max |
Unit |
Repetitive peak off-state voltages | VDRM VRRM |
|
- |
800 |
- |
V |
Average on-state current |
IT(AV) |
o |
- |
16 |
- |
A |
RMS on-state current |
IT(RMS) |
all conduction angles |
- |
25 |
- |
A |
On-state voltage |
VTM |
o |
- |
- |
1.25 |
V |
Holding current | IH | VD =12 V; IGT = 0.1 A |
- |
- | 100 | mA |
Latching current | IL | VD =12 V; IGT = 0.1 A |
- |
- | 200 | mA |
Gate trigger current |
IGT |
VD =12 V; IT = 0.1 A |
- |
- |
45 |
mA |
Gate trigger voltage |
VGT |
VD =12 V; IT = 0.1 A |
- |
- |
2.0 |
V |
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