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25TTS12 semiconductors phase control scr 1200V

    Unit Price: USD 0.22 - 0.25 / Piece/Pieces
    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF
    Min. Order: 2000 Piece/Pieces
    Delivery Time: 30 Days

Basic Info

Model No.: YZPST-25TTS12-1

Additional Info

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity: 10000

Brand: YZPST

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 100000

Certificate: ISO9001-2015,ROHS

Port: SHANGHAI

Product Description


Phase Control SCR, 25 A

DESCRIPTION/FEATURES

The 25TTS... High Voltage Series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to

125 °C junction temperature.

Typical applications are in input rectification (soft start) and these products are designed to be used with Vishay HPP input diodes, switches and output rectifiers which are available in identical package outlines.

This product has been designed and qualified for industrial level.

1

PRODUCT SUMMARY

VT at 16 A

< 1.25 V

ITSM

300 A

VRRM

800/1200 V

OUTPUT CURRENT IN TYPICAL APPLICATIONS

APPLICATIONS

SINGLE-PHASE BRIDGE

THREE-PHASE BRIDGE

UNITS

Capacitive input filter TA = 55 °C, TJ = 125 °C, common heatsink of 1 °C/W

18

22

A

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER

TEST CONDITIONS

VALUES

UNITS

IT(AV)

Sinusoidal waveform

16

A

IRMS

25

VRRM/VDRM

800/1200

V

ITSM

300

A

VT

16 A, TJ = 25 °C

1.25

V

dV/dt

500

V/µs

dI/dt

150

A/µs

TJ

- 40 to 125

°C

VOLTAGE RATINGS

PART NUMBER

VRRM, MAXIMUM PEAK REVERSE VOLTAGE V

VDRM, MAXIMUM PEAK DIRECT VOLTAGE

V

IRRM/IDRM AT 125 °C mA

25TTS08

800

800

10

25TTS12

1200

1200

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

TYP.

MAX.

Maximum average on-state current

IT(AV)

TC = 93 °C, 180° conduction half sine wave

16

A

Maximum RMS on-state current

IRMS

25

Maximum peak, one-cycle, non-repetitive surge current

ITSM

10 ms sine pulse, rated VRRM applied

300

10 ms sine pulse, no voltage reapplied

350

Maximum I2t for fusing

I2t

10 ms sine pulse, rated VRRM applied

450

A2s

10 ms sine pulse, no voltage reapplied

630

Maximum I2t for fusing

I2t

t = 0.1 to 10 ms, no voltage reapplied

6300

A2s

Maximum on-state voltage drop

VTM

16 A, TJ = 25 °C

1.25

V

On-state slope resistance

rt

TJ = 125 °C

12.0

mΩ

Threshold voltage

VT(TO)

1.0

V

Maximum reverse and direct leakage current

IRM/IDM

TJ = 25 °C

VR = Rated VRRM/VDRM

0.5

mA

TJ = 125 °C

10

Holding current

IH

Anode supply = 6 V, resistive load, initial IT = 1 A

-

100

Maximum latching current

IL

Anode supply = 6 V, resistive load

200

Maximum rate of rise of off-state voltage

dV/dt

500

V/µs

Maximum rate of rise of turned-on current

dI/dt

150

A/µs

TRIGGERING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum peak gate power

PGM

8.0

W

Maximum average gate power

PG(AV)

2.0

Maximum peak positive gate current

+ IGM

1.5

A

Maximum peak negative gate voltage

- VGM

10

V

Maximum required DC gate current to trigger

IGT

Anode supply = 6 V, resistive load, TJ = - 10 °C

60

mA

Anode supply = 6 V, resistive load, TJ = 25 °C

45

Anode supply = 6 V, resistive load, TJ = 125 °C

20

Maximum required DC gate voltage to trigger

VGT

Anode supply = 6 V, resistive load, TJ = - 10 °C

2.5

V

Anode supply = 6 V, resistive load, TJ = 25 °C

2.0

Anode supply = 6 V, resistive load, TJ = 125 °C

1.0

Maximum DC gate voltage not to trigger

VGD

TJ = 125 °C, VDRM = Rated value

0.25

Maximum DC gate current not to trigger

IGD

2.0

mA

SWITCHING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Typical turn-on time

tgt

TJ = 25 °C

0.9

µs

Typical reverse recovery time

trr

TJ = 125 °C

4

Typical turn-off time

tq

110

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum junction and storage temperature range

TJ, TStg

- 40 to 125

°C

Maximum thermal resistance, junction to case

RthJC

DC operation

1.1

°C/W

Maximum thermal resistance, junction to ambient

RthJA

62

Typical thermal resistance, case to heatsink

RthCS

Mounting surface, smooth and greased

0.5

Approximate weight

2

g

0.07

oz.

Mounting torque

minimum

6 (5)

kgf · cm

(lbf · in)

maximum

12 (10)

Marking device

Case style TO-220AB

25TTS08

25TTS12

2

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Product Categories : Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR)

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  • 25TTS12 semiconductors phase control scr 1200V
  • 25TTS12 semiconductors phase control scr 1200V
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